As Si-based electronics technology approaches its scaling limits,it arises great interest in optical interconnections via Si photonics.However,Si with an indirect band-gap structure can hardly emit light.The lack of a...As Si-based electronics technology approaches its scaling limits,it arises great interest in optical interconnections via Si photonics.However,Si with an indirect band-gap structure can hardly emit light.The lack of an efficient onchip laser source remains as the major roadblock of Si photonics for decades,which recently has drawn renewed research interest.It is highly desirable to grow III–V semiconductor laser directly on Si for a monolithic integration with Si photonics to take the full advantage of lowcost large-scale fabrication platforms[1–3].展开更多
基金funding by the National Key Research and Development Program of China (2016YFB0400101)
文摘As Si-based electronics technology approaches its scaling limits,it arises great interest in optical interconnections via Si photonics.However,Si with an indirect band-gap structure can hardly emit light.The lack of an efficient onchip laser source remains as the major roadblock of Si photonics for decades,which recently has drawn renewed research interest.It is highly desirable to grow III–V semiconductor laser directly on Si for a monolithic integration with Si photonics to take the full advantage of lowcost large-scale fabrication platforms[1–3].
