The spoiler is a kind of device to disturb current and promote burying.At present,all submarine pipeline spoilers at home and abroad are parallel spoilers,that is,the plane of the spoiler is parallel to the vertical p...The spoiler is a kind of device to disturb current and promote burying.At present,all submarine pipeline spoilers at home and abroad are parallel spoilers,that is,the plane of the spoiler is parallel to the vertical plane of the pipeline axis.According to the results of indoor experiments,when the pipeline with the forward spoiler is installed perpendicular to the direction of water flow,the spoiler will accelerate the seabed erosion and cause the pipeline to endure downward pressure,which will eventually cause the pipeline self-buried to form a protection.However,when the pipeline direction is consistent with the flow direction,the self-buried behavior and protective effect is vanished.By aiming at the defect that the forward spoiler cannot be self-buried when the direction of the pipeline and the flow are basically parallel,the spoiler burying aid device perpendicular to the pipeline axis has been innovatively developed,and the hydrodynamic changes and sediment erosion characteristics near the pipeline after the installation of the device were studied based on the experiment.Results reveal that although the perpendicular spoiler cannot generate downforce,it can greatly increase the turbulent kinetic energy of the flow and the rate of sediment erosion.The larger the angle between the pipeline axis and the spoiler plane is,the larger the increase in turbulent energy will be.The increase in turbulent energy near the bed surface can reach up about 70%when the angle is 90°,while serious sediment erosion mainly occurs along both sides of the pipeline with a distance of about 2−4 times the pipe diameter.In the future,we can further explore the influence of the perpendicular spoiler size and installation position on the pipeline downforce and the effect of burying promotion.At the same time,field tests on the perpendicular spoiler burying aid device currently developed will conduct to observe the actual effect of perpendicular spoiler promoting pipeline scouring and burying,and improve submarine pipeline safety protection technology.展开更多
We theoretically investigate the Doppler effect on optical bistability in an N-type active Raman gain atomic system inside an optical ring cavity. It is shown that the Doppler effect can greatly enhance the dispersion...We theoretically investigate the Doppler effect on optical bistability in an N-type active Raman gain atomic system inside an optical ring cavity. It is shown that the Doppler effect can greatly enhance the dispersion and thus create the bistable behaviour or greatly increase the bistable region, which has been known as the positive Doppler effect on optical bistability. In addition, we find that a positive Doppler effect can change optical bistability from the hybrid dispersion-gain type to a dispersive type.展开更多
We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr2Se4. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling...We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr2Se4. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling laws for a narrow range of temperatures near the critical point, two methods with connections to the renormalization group theory provide analytical descriptions of the magnetic properties for much wider temperature ranges. Based on this, an analytical formula is obtained for the temperature dependence of the low field magnetoresistance in the paramagnetic phase.展开更多
A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect t...A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.展开更多
The lattice, the band gap and the optical properties of n-type ZnO under uniaxial stress are investigated by first- principles calculations. The results show that the lattice constants change linearly with stress. Ban...The lattice, the band gap and the optical properties of n-type ZnO under uniaxial stress are investigated by first- principles calculations. The results show that the lattice constants change linearly with stress. Band gaps are broadened linearly as the uniaxial compressive stress increases. The change of band gap for n-type ZnO comes mainly from the contribution of stress in the c-axis direction, and the reason for band gap of n-type ZnO changing with stress is also explained. The calculated results of optical properties reveal that the imaginary part of the dielectric function decreases with the increase of uniaxial compressive stress at low energy. However, when the energy is higher than 4.0 eV, the imaginary part of the dielectric function increases with the increase of stress and a blueshift appears. There are two peaks in the absorption spectrum in an energy range of 4.0-13.0 eV. The stress coefficient of the band gap of n-type ZnO is larger than that of pure ZnO, which supplies the theoretical reference value for the modulation of the band gap of doped ZnO.展开更多
The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradati...The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.展开更多
基金This work was financially supported by the National Key Research and Development Plan of China(Grant Nos.2018YFC0407802-3,2018YFC0407803 and 2017YFC0405605)the National Natural Science Foundation of China(Grant No.51909069).
文摘The spoiler is a kind of device to disturb current and promote burying.At present,all submarine pipeline spoilers at home and abroad are parallel spoilers,that is,the plane of the spoiler is parallel to the vertical plane of the pipeline axis.According to the results of indoor experiments,when the pipeline with the forward spoiler is installed perpendicular to the direction of water flow,the spoiler will accelerate the seabed erosion and cause the pipeline to endure downward pressure,which will eventually cause the pipeline self-buried to form a protection.However,when the pipeline direction is consistent with the flow direction,the self-buried behavior and protective effect is vanished.By aiming at the defect that the forward spoiler cannot be self-buried when the direction of the pipeline and the flow are basically parallel,the spoiler burying aid device perpendicular to the pipeline axis has been innovatively developed,and the hydrodynamic changes and sediment erosion characteristics near the pipeline after the installation of the device were studied based on the experiment.Results reveal that although the perpendicular spoiler cannot generate downforce,it can greatly increase the turbulent kinetic energy of the flow and the rate of sediment erosion.The larger the angle between the pipeline axis and the spoiler plane is,the larger the increase in turbulent energy will be.The increase in turbulent energy near the bed surface can reach up about 70%when the angle is 90°,while serious sediment erosion mainly occurs along both sides of the pipeline with a distance of about 2−4 times the pipe diameter.In the future,we can further explore the influence of the perpendicular spoiler size and installation position on the pipeline downforce and the effect of burying promotion.At the same time,field tests on the perpendicular spoiler burying aid device currently developed will conduct to observe the actual effect of perpendicular spoiler promoting pipeline scouring and burying,and improve submarine pipeline safety protection technology.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60978013)the Shanghai Rising Star Project,China (Grant No. 11QA1407400)
文摘We theoretically investigate the Doppler effect on optical bistability in an N-type active Raman gain atomic system inside an optical ring cavity. It is shown that the Doppler effect can greatly enhance the dispersion and thus create the bistable behaviour or greatly increase the bistable region, which has been known as the positive Doppler effect on optical bistability. In addition, we find that a positive Doppler effect can change optical bistability from the hybrid dispersion-gain type to a dispersive type.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61425015,11474330 and 11374337the National Basic Research Program of China under Grant Nos 2012CB921703 and 2015CB921102the Chinese Academy of Sciences
文摘We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr2Se4. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling laws for a narrow range of temperatures near the critical point, two methods with connections to the renormalization group theory provide analytical descriptions of the magnetic properties for much wider temperature ranges. Based on this, an analytical formula is obtained for the temperature dependence of the low field magnetoresistance in the paramagnetic phase.
基金Project supported by the National Natural Science Foundation of China （Grant No 60436030） and the Key Laboratory for Defence Science and Technology on Military Simulation Integrated Circuits （Grant No 9140C0903010604）.
文摘A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61076098)the Innovative Foundation for Doctoral Candidate of Jiangsu Province, China (Grant No. CX10B 252Z)
文摘The lattice, the band gap and the optical properties of n-type ZnO under uniaxial stress are investigated by first- principles calculations. The results show that the lattice constants change linearly with stress. Band gaps are broadened linearly as the uniaxial compressive stress increases. The change of band gap for n-type ZnO comes mainly from the contribution of stress in the c-axis direction, and the reason for band gap of n-type ZnO changing with stress is also explained. The calculated results of optical properties reveal that the imaginary part of the dielectric function decreases with the increase of uniaxial compressive stress at low energy. However, when the energy is higher than 4.0 eV, the imaginary part of the dielectric function increases with the increase of stress and a blueshift appears. There are two peaks in the absorption spectrum in an energy range of 4.0-13.0 eV. The stress coefficient of the band gap of n-type ZnO is larger than that of pure ZnO, which supplies the theoretical reference value for the modulation of the band gap of doped ZnO.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11475255,U1532261 and 11505282
文摘The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
