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N_2O活化的Fe/ZSM-5表面活性氧的表征(英文) 被引量:1
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作者 温广 张朋 《无机化学学报》 SCIE CAS CSCD 北大核心 2005年第10期1535-1540,共6页
Temperature-programmed reduction (H2-TPR) was employed to quantitatively characterize the active oxygen species generated from a high Fe-loading Fe/ZSM-5 catalyst exposed to N2O at 250 ℃. Fe-O-Fe2+ dimer was determin... Temperature-programmed reduction (H2-TPR) was employed to quantitatively characterize the active oxygen species generated from a high Fe-loading Fe/ZSM-5 catalyst exposed to N2O at 250 ℃. Fe-O-Fe2+ dimer was determined as the active iron complex for N2O decomposition to produce the active oxygen. Reduction of Fe3+ to Fe2+ by H2 in the dimer and removal of OH- groups from Fe2+ dimer by heating Fe/ZSM-5 to 700 ℃ were the prerequisites for the formation of this active Fe complex. A linear correlation with a slope of 1.0 between the amount of Fe-O-Fe2+ and that of active oxygen species was observed. Maximum amount of active oxygen species can be generated by reducing Fe/ZSM-5 catalyst with H2 at the temperatures over 500 ℃ and then heating the resulting product in Ar to 700 ℃, followed by N2O exposure at 250 ℃.The ratio of the total number of oxygen atoms (Ode) deposited by interaction of Fe-O-Fe2+ with N2O to the amount of Fe-O-Fe2+ was 2. However, not all the deposited oxygen atoms were active oxygen (Oa); the ratio of Oa and Ode was 0.5. The iron dimer complex composing active oxygen is a five-atom ion Fe2O32+; the most probable structure is as follows: 展开更多
关键词 活性氧 Fe/ZSM-5催化剂 n2o处理 程序升温还原 [Fe—o—Fe]^2+二元体
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栅氧氮化处理中氧化炉膜厚均一性研究
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作者 张博 刘继广 陈菊英 《电子制作》 2016年第9期92-93,共2页
在半导体芯片制造过程中,需要对栅氧化过程中的引入N2O气体进行掺氮处理,本文发现N2O气体的引入是一个放热反应,并且导致氧化炉内的温度不均匀,进而使得炉内的氧化层厚度的均一性随炉内位置的变化变差,通过对氧化炉内的温度矫正,实现了... 在半导体芯片制造过程中,需要对栅氧化过程中的引入N2O气体进行掺氮处理,本文发现N2O气体的引入是一个放热反应,并且导致氧化炉内的温度不均匀,进而使得炉内的氧化层厚度的均一性随炉内位置的变化变差,通过对氧化炉内的温度矫正,实现了氧化炉满炉大批量生长。 展开更多
关键词 栅氧 n2o氮化处理 炉内均一性
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