Non-uniform linear array(NULA)configurations are well renowned due to their structural ability for providing increased degrees of freedom(DOF)and wider array aperture than uniform linear arrays(ULAs).These characteris...Non-uniform linear array(NULA)configurations are well renowned due to their structural ability for providing increased degrees of freedom(DOF)and wider array aperture than uniform linear arrays(ULAs).These characteristics play a significant role in improving the direction-of-arrival(DOA)estimation accuracy.However,most of the existing NULA geometries are primarily applicable to circular sources(CSs),while they limitedly improve the DOF and continuous virtual aperture for noncircular sources(NCSs).Toward this purpose,we present a triaddisplaced ULAs(Tdis-ULAs)configuration for NCS.The TdisULAs structure generally consists of three ULAs,which are appropriately placed.The proposed antenna array approach fully exploits the non-circular characteristics of the sources.Given the same number of elements,the Tdis-ULAs design achieves more DOF and larger hole-free co-array aperture than its sparse array competitors.Advantageously,the number of uniform DOF,optimal distribution of elements among the ULAs,and precise element positions are uniquely determined by the closed-form expressions.Moreover,the proposed array also produces a filled resulting co-array.Numerical simulations are conducted to show the performance advantages of the proposed Tdis-ULAs configuration over its counterpart designs.展开更多
文章采用水平分割法确定误差补偿点,对3种运动指令修改算法,实现定位指令、直线插补指令和圆弧插补指令的算法修改。在FANUC Series oi-mate系统VMC-850立式加工中心上运行基于修改NC程序的误差补偿软件,进行对比验证,结果表明补偿后加...文章采用水平分割法确定误差补偿点,对3种运动指令修改算法,实现定位指令、直线插补指令和圆弧插补指令的算法修改。在FANUC Series oi-mate系统VMC-850立式加工中心上运行基于修改NC程序的误差补偿软件,进行对比验证,结果表明补偿后加工精度提高30%左右。展开更多
The steep sub-threshold swing of a tunneling field-effect transistor(TFET)makes it one of the best candidates for lowpower nanometer devices.However,the low driving capability of TFETs prevents their application in in...The steep sub-threshold swing of a tunneling field-effect transistor(TFET)makes it one of the best candidates for lowpower nanometer devices.However,the low driving capability of TFETs prevents their application in integrated circuits.In this study,an innovative gate-all-around(GAA)TFET,which represents a negative capacitance GAA gate-to-source overlap TFET(NCGAA-SOL-TFET),is proposed to increase the driving current.The proposed NCGAA-SOL-TFET is developed based on technology computer-aided design(TCAD)simulations.The proposed structure can solve the problem of the insufficient driving capability of conventional TFETs and is suitable for sub-3-nm nodes.In addition,due to the negative capacitance effect,the surface potential of the channel can be amplified,thus enhancing the driving current.The gateto-source overlap(SOL)technique is used for the first time in an NCGAA-TFET to increase the band-to-band tunneling rate and tunneling area at the silicon-germanium heterojunction.By optimizing the design of the proposed structure via adjusting the SOL length and the ferroelectric layer thickness,a sufficiently large on-state current of 17.20μA can be achieved and the threshold voltage can be reduced to 0.31 V with a sub-threshold swing of 44.98 mV/decade.Finally,the proposed NCGAA-SOL-TFET can overcome the Boltzmann limit-related problem,achieving a driving current that is comparable to that of the traditional complementary metal-oxide semiconductor devices.展开更多
基金supported by the National Natural Science Foundation of China(62031017,61971221)the Fundamental Research Funds for the Central Universities of China(NP2020104)。
文摘Non-uniform linear array(NULA)configurations are well renowned due to their structural ability for providing increased degrees of freedom(DOF)and wider array aperture than uniform linear arrays(ULAs).These characteristics play a significant role in improving the direction-of-arrival(DOA)estimation accuracy.However,most of the existing NULA geometries are primarily applicable to circular sources(CSs),while they limitedly improve the DOF and continuous virtual aperture for noncircular sources(NCSs).Toward this purpose,we present a triaddisplaced ULAs(Tdis-ULAs)configuration for NCS.The TdisULAs structure generally consists of three ULAs,which are appropriately placed.The proposed antenna array approach fully exploits the non-circular characteristics of the sources.Given the same number of elements,the Tdis-ULAs design achieves more DOF and larger hole-free co-array aperture than its sparse array competitors.Advantageously,the number of uniform DOF,optimal distribution of elements among the ULAs,and precise element positions are uniquely determined by the closed-form expressions.Moreover,the proposed array also produces a filled resulting co-array.Numerical simulations are conducted to show the performance advantages of the proposed Tdis-ULAs configuration over its counterpart designs.
基金supported by the Zhejiang Provincial Natural Science Foundation of China(Grant No.LY22F040001)the National Natural Science Foundation of China(Grant No.62071160)the Graduate Scientific Research Foundation of Hangzhou Dianzi University。
文摘The steep sub-threshold swing of a tunneling field-effect transistor(TFET)makes it one of the best candidates for lowpower nanometer devices.However,the low driving capability of TFETs prevents their application in integrated circuits.In this study,an innovative gate-all-around(GAA)TFET,which represents a negative capacitance GAA gate-to-source overlap TFET(NCGAA-SOL-TFET),is proposed to increase the driving current.The proposed NCGAA-SOL-TFET is developed based on technology computer-aided design(TCAD)simulations.The proposed structure can solve the problem of the insufficient driving capability of conventional TFETs and is suitable for sub-3-nm nodes.In addition,due to the negative capacitance effect,the surface potential of the channel can be amplified,thus enhancing the driving current.The gateto-source overlap(SOL)technique is used for the first time in an NCGAA-TFET to increase the band-to-band tunneling rate and tunneling area at the silicon-germanium heterojunction.By optimizing the design of the proposed structure via adjusting the SOL length and the ferroelectric layer thickness,a sufficiently large on-state current of 17.20μA can be achieved and the threshold voltage can be reduced to 0.31 V with a sub-threshold swing of 44.98 mV/decade.Finally,the proposed NCGAA-SOL-TFET can overcome the Boltzmann limit-related problem,achieving a driving current that is comparable to that of the traditional complementary metal-oxide semiconductor devices.
