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蓝宝石R面上ZnO薄膜的NH_3掺杂研究 被引量:1
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作者 王金忠 杜国同 +9 位作者 马艳 赵佰军 杨晓天 张源涛 刘大力 李万程 杨洪军 杨树人 吴爱国 李壮 《发光学报》 EI CAS CSCD 北大核心 2003年第4期335-338,共4页
以NH3为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH3流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高... 以NH3为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH3流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高电阻率,并对其光电子能谱进行了研究。 展开更多
关键词 蓝宝石R面 氧化锌薄膜 金屑有机化学气相沉积 X射线光电子能谱 ZNO薄膜 nh3掺杂 半导体 掺杂
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Selective Sensing Characteristics of Ca Doped BeO Nano-sized Tube toward H20 and NH3
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作者 Maziar Noei Vali Zare-Shahabadi Seyedeh Najmeh Razi 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2013年第5期612-616,I0004,共6页
By means of density functional calculations, the structural and electronic properties of chemical modification of pristine and Ca-doped BeO nanotubes were investigated with NH3 and H20 molecules. It was found that the... By means of density functional calculations, the structural and electronic properties of chemical modification of pristine and Ca-doped BeO nanotubes were investigated with NH3 and H20 molecules. It was found that the NH3 and H20 molecules can be adsorbed on the Be atom of the tube sidewall with the adsorption energies of about 36.1 and 39.0 kcal/mol, respectively. Density of states analysis shows that the electronic properties of the BeONT are slightly changed after the adsorption processes. Substitution of a Be atom in the tube surface with a Ca atom increases the adsorption energies by about 7.4 and 14.7 kcal/mol for NH3 and H20, respectively. Unlike the pristine tube, the electronic properties of Ca-doped BeONT are sensitive to NH3 and H20 molecules. Also, the Ca-doped tube is much more sensitive to H20 molecule than NH3 one. 展开更多
关键词 Doping Density functional theory Sensor B3LYP
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氮δ掺杂Cu_2O薄膜的生长及物性研究 被引量:2
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作者 李微 潘景薪 +6 位作者 王登魁 方铉 房丹 王新伟 唐吉龙 王晓华 孙秀平 《中国激光》 EI CAS CSCD 北大核心 2018年第1期135-139,共5页
采用等离子体增强原子层沉积(PEALD)技术,以NH3为掺杂源,制备了氮δ掺杂Cu_2O薄膜,研究了N掺杂对Cu_2O薄膜表面形貌、光学及电学性质的影响。研究结果表明,N掺杂引起了晶格畸变,Cu_2O薄膜的表面粗糙度增大;掺杂后Cu_2O薄膜的带隙宽度从2... 采用等离子体增强原子层沉积(PEALD)技术,以NH3为掺杂源,制备了氮δ掺杂Cu_2O薄膜,研究了N掺杂对Cu_2O薄膜表面形貌、光学及电学性质的影响。研究结果表明,N掺杂引起了晶格畸变,Cu_2O薄膜的表面粗糙度增大;掺杂后Cu_2O薄膜的带隙宽度从2.70eV增加到3.20eV,吸收边变得陡峭;掺杂后载流子浓度为6.32×1019 cm^(-3),相比于未掺杂样品(5.77×1018 cm^(-3))的提升了一个数量级。 展开更多
关键词 材料 等离子体增强原子层沉积 氮δ掺杂 Cu2O薄膜 nh3掺杂
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