以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜...以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。展开更多
Low metal-graphene contact resistance is important in making high-performance graphene devices.In this work,we demonstrate a lower specific contact resistivity of Au_(0.88)Ge_(0.12)/Ni/Au-graphene contact compared wit...Low metal-graphene contact resistance is important in making high-performance graphene devices.In this work,we demonstrate a lower specific contact resistivity of Au_(0.88)Ge_(0.12)/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts.The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance.Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance.The specific contact resistivity decreases from 2.5 × 10^(-4) to 7.8 × 10^(-5) Ω·cm^2 by pre-annealing at 300 ℃ for one hour,and continues to decrease to9.5 × 10^(-7) H·cm^2 after post-annealing at 490 ℃ for 60 seconds.These approaches provide reliable means of lowering contact resistance.展开更多
The forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN are studied by using temperature-dependent current-voltage(T–I–V)and capacitance-voltage(C–V)measurements.The...The forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN are studied by using temperature-dependent current-voltage(T–I–V)and capacitance-voltage(C–V)measurements.The low-forward-bias I–V curve of the Schottky junction is found to be dominated by trap-assisted tunneling below 400 K,and thus can not be used to deduce the Schottky barrier height(SBH)based on the thermionic emission(TE)model.On the other hand,TE transport mechanism dominates the high-forward-bias region and a modified I–V method is adopted to deduce the effective barrier height.It is found that the estimated SBH(~0.95 eV at 300 K)by the I–V method is~0.20 eV lower than that obtained by the C–V method,which is explained by a barrier inhomogeneity model over the Schottky contact area.展开更多
基金The National Natural Science Foundation of China(No.11404291)the Aeronautical Science Foundation(Nos.2014ZF55013,2015ZF55013)+1 种基金the Outstanding Person Foundation of Henan Province(No.164200510006)the Key Research Project of the Education Department Henan Province(No.15A140042)
文摘以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。
基金Project supported by the National Natural Science Foundation of China(Grant No.61376065)the Science and Technology Project of Suzhou,China(Grant No.ZXG2013044)
文摘Low metal-graphene contact resistance is important in making high-performance graphene devices.In this work,we demonstrate a lower specific contact resistivity of Au_(0.88)Ge_(0.12)/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts.The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance.Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance.The specific contact resistivity decreases from 2.5 × 10^(-4) to 7.8 × 10^(-5) Ω·cm^2 by pre-annealing at 300 ℃ for one hour,and continues to decrease to9.5 × 10^(-7) H·cm^2 after post-annealing at 490 ℃ for 60 seconds.These approaches provide reliable means of lowering contact resistance.
基金Supported by the National Basic Research Program of China under Grant No 2010CB327504the National Natural Science Foundation of China under Grant Nos 60936004 and 11074280+1 种基金the Fundamental Research Funds for the Central Universities of China under Grant Nos JUSRP111A42,JUSRP211A37 and JUSRP20914the State Key Laboratory of ASIC&System under Grant No 11KF003.
文摘The forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN are studied by using temperature-dependent current-voltage(T–I–V)and capacitance-voltage(C–V)measurements.The low-forward-bias I–V curve of the Schottky junction is found to be dominated by trap-assisted tunneling below 400 K,and thus can not be used to deduce the Schottky barrier height(SBH)based on the thermionic emission(TE)model.On the other hand,TE transport mechanism dominates the high-forward-bias region and a modified I–V method is adopted to deduce the effective barrier height.It is found that the estimated SBH(~0.95 eV at 300 K)by the I–V method is~0.20 eV lower than that obtained by the C–V method,which is explained by a barrier inhomogeneity model over the Schottky contact area.
