Giant magnetic field induced strain （MFIS） up to 6.2% is achieved in the Ni50Mn27.5Ga22.5 single crystals with 5 M martensitic structure at room temperature. The switching magnetic field was about 2.4 kOe for the ma...Giant magnetic field induced strain （MFIS） up to 6.2% is achieved in the Ni50Mn27.5Ga22.5 single crystals with 5 M martensitic structure at room temperature. The switching magnetic field was about 2.4 kOe for the magnetostrain. A ‘magnetization jump＇ effect in the switching field applied along the initially hard direction confirms the occurrence of the large magnetostrain. The temperature dependence of the magnetostrain is investigated in lower temperature range. A linear decrease of the magnetostrain is observed with increasing temperature, but a strong decrease is monitored near the reverse martensitic transformation temperature.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 50271002, and the New Century Programme for Excellent Talents of the Ministry of Education of China under Grant No 04-0165.
文摘Giant magnetic field induced strain （MFIS） up to 6.2% is achieved in the Ni50Mn27.5Ga22.5 single crystals with 5 M martensitic structure at room temperature. The switching magnetic field was about 2.4 kOe for the magnetostrain. A ‘magnetization jump＇ effect in the switching field applied along the initially hard direction confirms the occurrence of the large magnetostrain. The temperature dependence of the magnetostrain is investigated in lower temperature range. A linear decrease of the magnetostrain is observed with increasing temperature, but a strong decrease is monitored near the reverse martensitic transformation temperature.
