The corrosion behavior of B30 Cu-Ni alloy in a sterile seawater and a SRB solution was investigated. The results show that the corrosion potential of specimen in the SRB solution is much lower than that in the sterile...The corrosion behavior of B30 Cu-Ni alloy in a sterile seawater and a SRB solution was investigated. The results show that the corrosion potential of specimen in the SRB solution is much lower than that in the sterile seawater. The polarization resistance of specimen in the SRB solution decreases quickly after a period immersion and becomes much lower than that in the sterile seawater. It is concluded that the SRB accelerates the corrosion process of B30 Cu-Ni alloy greatly. An anti-corrosion electroless Ni-P coating was produced and applied to the alloy. The results show that specimens coated with Ni-P plating exhibit favorable corrosion resistance property in SRB solution. Severe pitting corrosion appears on the uncoated specimens in the SRB solution when the coated specimens are still in good condition. The anti-corrosion mechanism of Ni-P plating was analyzed. It is concluded that coating the B30 Cu-Ni alloy with electroless Ni-P plating is an effective technique against the attack of SRB in marine environment.展开更多
This paper investigates a simplified metal induced crystallization （MIC） of a-Si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ...This paper investigates a simplified metal induced crystallization （MIC） of a-Si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol, a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm^2/（V· s）. By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.展开更多
基金Project (2005JS5144904.01) supported by the State Key Laboratory for Marine Corrosion and Protection, China
文摘The corrosion behavior of B30 Cu-Ni alloy in a sterile seawater and a SRB solution was investigated. The results show that the corrosion potential of specimen in the SRB solution is much lower than that in the sterile seawater. The polarization resistance of specimen in the SRB solution decreases quickly after a period immersion and becomes much lower than that in the sterile seawater. It is concluded that the SRB accelerates the corrosion process of B30 Cu-Ni alloy greatly. An anti-corrosion electroless Ni-P coating was produced and applied to the alloy. The results show that specimens coated with Ni-P plating exhibit favorable corrosion resistance property in SRB solution. Severe pitting corrosion appears on the uncoated specimens in the SRB solution when the coated specimens are still in good condition. The anti-corrosion mechanism of Ni-P plating was analyzed. It is concluded that coating the B30 Cu-Ni alloy with electroless Ni-P plating is an effective technique against the attack of SRB in marine environment.
基金supported by Key Project of National Natural Science Foundation of China (Grant No 60437030)"863" Project of National Ministry of Science and Technology of China (Grant No 2004AA33570)Tianjin Natural Science Foundation of China (Grant No 05YFJMJC01400)
文摘This paper investigates a simplified metal induced crystallization （MIC） of a-Si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol, a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm^2/（V· s）. By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.
