Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency a...Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.展开更多
Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene base...Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography technology.The single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals heterojunction.Thin polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles.Moreover,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.展开更多
Ferroelectric materials are promising candidates for ultraviolet photodetectors due to their ferroelectric effect.In this work,a BaTiO_(3)/p-GaN/Au hybrid heterojunction-Schottky self-driven ultraviolet photodetector ...Ferroelectric materials are promising candidates for ultraviolet photodetectors due to their ferroelectric effect.In this work,a BaTiO_(3)/p-GaN/Au hybrid heterojunction-Schottky self-driven ultraviolet photodetector was fabricated with excellent bipolar photoresponse property.At 0 V bias,the direction of the photocurrent can be switched by flipping the depolarization field of BaTiO_(3),which allows the performance of photodetectors to be controlled by the ferroelectric effect.Meanwhile,a relatively large responsivity and a fast response speed can be also observed.In particular,when the depolarization field of BaTiO_(3) is in the same direction of the built-in electric field of the Au/p-GaN Schottky junction(up polarized state),the photodetector exhibits a high responsivity of 18 mA/W at 360 nm,and a fast response speed of<40 ms at 0 V.These findings pave a new way for the preparation of high-performance photodetectors with bipolar photocurrents.展开更多
In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photo...In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.展开更多
The unique and interesting physical and chemical properties of metal–organic framework(MOF)materials have recently attracted extensive attention in a new generation of photoelectric applications.In this review,we sum...The unique and interesting physical and chemical properties of metal–organic framework(MOF)materials have recently attracted extensive attention in a new generation of photoelectric applications.In this review,we summarized and discussed the research progress on MOF-based photodetectors.The methods of preparing MOF-based photodetectors and various types of MOF single crystals and thin film as well as MOF composites are introduced in details.Additionally,the photodetectors applications for X-ray,ultraviolet and infrared light,biological detectors,and circularly polarized light photodetectors are discussed.Furthermore,summaries and challenges are provided for this important research field.展开更多
Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spec...Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spectrometer(XPS),and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets.A UV photodetector based on individual Sr_(2)Nb_(3)O_(10) nanosheets was prepared to demonstrate the application of an ultraviolet(UV) photodetector.The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3×10^(5) A·W^(-1) at 5 V bias under 280 nm illumination,a photocurrent of 60 nA,and an on/off ratio of 3×10^(2).展开更多
Avalanche photodetectors(APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and...Avalanche photodetectors(APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication(SACM)APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator(SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at-21 V, indicating a breakdown voltage greater than-21 V for the device. The APDs exhibit a unitgain responsivity of 0.5 A/W at-10 V. At-15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of-10 and-25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of-15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor(LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at-21 V and-9 dBm input power reveal signal to noise ratio(SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor(CMOS) process,shows that utilizing the peaking effect at low optical power increases bandwidth.展开更多
The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(...The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(2)-based photodetection faces obstacles,including slow response speed and low normalized detectivity.In this work,photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures have been implemented through a polydimethylsiloxane(PDMS)−assisted transfer method.These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range.The photodetector based on the SnS/SnSe_(2)heterostructure exhibits a significant responsivity of 4.99×10^(3)A∙W^(−1),normalized detectivity of 5.80×10^(12)cm∙Hz^(1/2)∙W^(−1),and fast response time of 3.13 ms,respectively,owing to the built-in electric field.Meanwhile,the highest values of responsivity,normalized detectivity,and response time for the photodetector based on the SnSe/SnSe_(2)heterostructure are 5.91×10^(3)A∙W^(−1),7.03×10^(12)cm∙Hz^(1/2)∙W−1,and 4.74 ms,respectively.And their photodetection performances transcend those of photodetectors based on individual SnSe_(2),SnS,SnSe,and other commonly used 2D materials.Our work has demonstrated an effective strategy to improve the performance of SnSe_(2)-based photodetectors and paves the way for their future commercialization.展开更多
Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quas...Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quasi-one-dimensional PdBr_(2) by using combined measurements of the angle-resolved polarized Raman spectroscopy(ARPRS) and anisotropic optical absorption spectrum. The analyses of ARPRS data validate the anisotropic Raman properties of the PdBr_(2) flake.And anisotropic optical absorption spectrum of PdBr_(2) nanoflake demonstrates distinct optical linear dichroism reversal. Photodetector constructed by PdBr_(2) nanowire exhibits high responsivity of 747 A·W^(-1) and specific detectivity of 5.8×10^(12) Jones. And the photodetector demonstrates prominent polarization-sensitive photoresponsivity under 405-nm light irradiation with large photocurrent anisotropy ratio of 1.56, which is superior to those of most of previously reported quasi-one-dimensional counterparts. Our study offers fundamental insights into the strong optical anisotropy exhibited by PdBr_(2), establishing it as a promising candidate for miniaturization and integration trends of polarization-related applications.展开更多
In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-...In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.展开更多
An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horiz...An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube furnace on a 40 nm TiO_(2)thin film deposited on a p-type Si(100)substrate.The CuO–TiO_(2)/TiO_(2)/p-Si(100)devices exhibited excellent rectification characteristics under dark and individual photoillumination conditions.The devices showed remarkable photo-response under broadband(300–1100 nm)light illumination at zero bias voltage,indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations.The maximum response of the devices is observed at 300 nm for an illumination power of 10 W.The response and recovery times were calculated as 86 ms and 78 ms,respectively.Moreover,under a small bias,the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions.The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices.Under illumination conditions,the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO_(2)/TiO_(2)interface.These characteristics make the CuO–TiO_(2)/TiO_(2)broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.展开更多
Quantum dot-based up-conversion photodetector,in which an infrared photodiode(PD)and a quantum dot light-emitting diode(QLED)are back-to-back connected,is a promising candidate for low-cost infrared imaging.However,th...Quantum dot-based up-conversion photodetector,in which an infrared photodiode(PD)and a quantum dot light-emitting diode(QLED)are back-to-back connected,is a promising candidate for low-cost infrared imaging.However,the huge efficiency losses caused by integrating the PD and QLED together hasn’t been studied sufficiently.This work revealed at least three origins for the efficiency losses.First,the PD unit and QLED unit usually didn’t work under optimal conditions at the same time.Second,the potential barriers and traps at the interconnection between PD and QLED units induced unfavorable carrier recombination.Third,much emitted visible light was lost due to the strong visible absorption in the PD unit.Based on the understandings on the loss mechanisms,the infrared up-conversion photodetectors were optimized and achieved a breakthrough photon-to-photon conversion efficiency of 6.9%.This study provided valuable guidance on how to optimize the way of integration for up-conversion photodetectors.展开更多
Two-dimensional Ruddlesden-Popper(2DRP)perovskites have attracted intense research interest for optoelectronic applications,due to their tunable optoelectronic properties and better environmental stability than their ...Two-dimensional Ruddlesden-Popper(2DRP)perovskites have attracted intense research interest for optoelectronic applications,due to their tunable optoelectronic properties and better environmental stability than their threedimensional counterparts.Furthermore,high-performance photodetectors based on single-crystal and polycrystalline thin-films 2DRP perovskites have shown great potential for practical application.However,the complex growth process of single-crystal membranes and uncontrollable phase distribution of polycrystalline films hinder the further development of 2DRP perovskites photodetectors.Herein,we report a series of high-performance photodetectors based on single-crystal-like phase-pure 2DRP perovskite films by designing a novel spacer source.Experimental and theoretical evidence demonstrates that phase-pure films substantially suppress defect states and ion migration.These highly sensitive photodetectors show I_(light)/I_(dark) ratio exceeding 3×10^(4),responsivities exceeding 16 A/W,and detectivities exceeding 3×10^(13) Jones,which are higher at least by 1 order than those of traditional mixed-phase thinfilms 2DRP devices(close to the reported single-crystal devices).More importantly,this strategy can significantly enhance the operational stability of optoelectronic devices and pave the way to large-area flexible productions.展开更多
High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is signif...High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity.Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed.In this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.展开更多
Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics.Herein,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion te...Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics.Herein,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-performance photodetectors.A solvent-free WS_(2) film deposited on paper favors an effective electron-hole separation and hampers recombination.The as-prepared paper-based WS2 photodetectors exhibit a sensitive photoresponse over a wide spectral range spanning from ultraviolet(365 nm)to near-infrared(940 nm).Their responsivity value reaches up to~270 mA W^(−1) at 35 V under a power density of 35 mW cm^(−2).A high performance photodetector was achieved by controlling the environmental exposure as the ambient oxygen molecules were found to decrease the photoresponse and stability of the WS_(2) photodetector.Furthermore,we have built a spectrometer using such a paperbased WS_(2) device as the photodetecting component to illustrate its potential application.The present work could promote the development of cost-effective disposable photodetection devices.展开更多
Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable m...Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable materials and wasteful fabrication methods. Herein, we present ZnO nanowires(NWs) based degradable high-performance UV photodetectors(PDs) on flexible chitosan substrate. Systematic investigations reveal the presented device exhibits excellent photo response, including high responsivity(55 A/W), superior specific detectivity(4×10^(14) jones), and the highest gain(8.5×10~(10)) among the reported state of the art biodegradable PDs. Further, the presented PDs display excellent mechanical flexibility under wide range of bending conditions and thermal stability in the measured temperature range(5–50 ℃).The biodegradability studies performed on the device, in both deionized(DI) water(pH≈6) and PBS solution(pH=7.4),show fast degradability in DI water(20 mins) as compared to PBS(48 h). These results show the potential the presented approach holds for green and cost-effective fabrication of wearable, and disposable sensing systems with reduced adverse environmental impact.展开更多
Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent ...Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.展开更多
Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implement...Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implementation of multifunctional detectors is based on the physical combination of optical lenses, gratings, and multiple photodetectors, the large size and its complex structure hinder the miniaturization, lightweight, and integration of devices. In contrast, perovskite materials have achieved remarkable progress in the field of multifunctional photodetectors due to their diverse crystal structures, simple morphology manipulation, and excellent optoelectronic properties. In this review, we first overview the crystal structures and morphology manipulation techniques of perovskite materials and then summarize the working mechanism and performance parameters of multifunctional photodetectors. Furthermore, the fabrication strategies of multifunctional perovskite photodetectors and their advancements are highlighted, including polarized light detection, spectral detection, angle-sensing detection, and selfpowered detection. Finally, the existing problems of multifunctional detectors and the perspectives of their future development are presented.展开更多
Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellen...Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellent optoelectronic performance with high moisture and oxygen resistance,making them one of the promising candidates for high-performance photodetectors,but a simple,low-cost and reliable fabrication technology is urgently needed.Here,a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning.This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films.Furthermore,our devices based on laterally conducting split-ring structured photodetectors possess outstanding performance,including the maximum responsivity of 1.44×105 mA W^(−1),a response time of 150μs in 1.5 kHz and one-unit area<4×10-2 mm2.Based on these split-ring photodetector arrays,we realized three-dimensional gesture detection with up to 100 mm distance detection and up to 600 mm s^(−1) speed detection,for low-cost,integrative,and non-contact human-machine interfaces.Finally,we applied this MIT to wearable and flexible digital gesture recognition watch panel,safe and comfortable central controller integrated on the car screen,and remote control of the robot,demonstrating the broad potential applications.展开更多
Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the constru...Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film.A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105,a decent responsivity of~343 mA/W,a respectable specific detectivity of~2.56×10^(12)Jones,and a rapid response time of 4.5/379μs,under 730 nm light irradiation.The detector also displays an outstanding long-term air stability and operational durability.In addition,thanks to the excellent flexibility,the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests.Furthermore,the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate,suggesting a possible application in the area of flexible and wearable health monitoring.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No.11974379)the National Key Basic Research and Development Program of China (Grant No.2021YFC2203400)Jiangsu Vocational Education Integrated Circuit Technology “Double-Qualified” Famous Teacher Studio (Grant No.2022-13)。
文摘Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.
基金supported by National Natural Science Foundation of China(51672308,51972025,61888102,and 62004187).
文摘Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography technology.The single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals heterojunction.Thin polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles.Moreover,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.62074148,61875194,11727902,12204474,12304111,and 12304112)the Youth Innovation Promotion Association,Chinese Academy of Sciences (Grant No.2020225)+1 种基金Jilin Province Science Fund (Grant Nos.20220101053JC and 20210101145JC)Jilin Province Young and Middle-Aged Science and Technology Innovation Leaders and Team Project (Grant No.20220508153RC)。
文摘Ferroelectric materials are promising candidates for ultraviolet photodetectors due to their ferroelectric effect.In this work,a BaTiO_(3)/p-GaN/Au hybrid heterojunction-Schottky self-driven ultraviolet photodetector was fabricated with excellent bipolar photoresponse property.At 0 V bias,the direction of the photocurrent can be switched by flipping the depolarization field of BaTiO_(3),which allows the performance of photodetectors to be controlled by the ferroelectric effect.Meanwhile,a relatively large responsivity and a fast response speed can be also observed.In particular,when the depolarization field of BaTiO_(3) is in the same direction of the built-in electric field of the Au/p-GaN Schottky junction(up polarized state),the photodetector exhibits a high responsivity of 18 mA/W at 360 nm,and a fast response speed of<40 ms at 0 V.These findings pave a new way for the preparation of high-performance photodetectors with bipolar photocurrents.
基金National Natural Science Foundation of China(62074056)Fundamental Research Funds for the Central Universities。
文摘In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.
基金support from the National Natural Science Foundation of China(U23A2095)the National Key R&D Program of China(2022YFA1503300)+3 种基金the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y2022081)Natural Science Foundation of Fujian Province(2022J06031)the STS Project of Fujian-CAS(2023T3003,2023T3052)Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(Grant No.2021ZR131).
文摘The unique and interesting physical and chemical properties of metal–organic framework(MOF)materials have recently attracted extensive attention in a new generation of photoelectric applications.In this review,we summarized and discussed the research progress on MOF-based photodetectors.The methods of preparing MOF-based photodetectors and various types of MOF single crystals and thin film as well as MOF composites are introduced in details.Additionally,the photodetectors applications for X-ray,ultraviolet and infrared light,biological detectors,and circularly polarized light photodetectors are discussed.Furthermore,summaries and challenges are provided for this important research field.
基金Funded by the National Natural Science Foundation of China(Nos.51872214 and 52172124)the Fundamental Research Funds for the Central Universities(WUT:2021Ⅲ019JC and 2018Ⅲ041GX)。
文摘Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spectrometer(XPS),and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets.A UV photodetector based on individual Sr_(2)Nb_(3)O_(10) nanosheets was prepared to demonstrate the application of an ultraviolet(UV) photodetector.The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3×10^(5) A·W^(-1) at 5 V bias under 280 nm illumination,a photocurrent of 60 nA,and an on/off ratio of 3×10^(2).
文摘Avalanche photodetectors(APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication(SACM)APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator(SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at-21 V, indicating a breakdown voltage greater than-21 V for the device. The APDs exhibit a unitgain responsivity of 0.5 A/W at-10 V. At-15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of-10 and-25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of-15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor(LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at-21 V and-9 dBm input power reveal signal to noise ratio(SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor(CMOS) process,shows that utilizing the peaking effect at low optical power increases bandwidth.
基金supported by the Jilin Scientific and Technological Development Program(Grant No.20230101286JC)National Natural Science Foundation of China(Grant Nos.61975051,6227503,and 52002110)Hebei Provincial Department of Education Innovation Ability Training Funding Project for graduate students.
文摘The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(2)-based photodetection faces obstacles,including slow response speed and low normalized detectivity.In this work,photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures have been implemented through a polydimethylsiloxane(PDMS)−assisted transfer method.These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range.The photodetector based on the SnS/SnSe_(2)heterostructure exhibits a significant responsivity of 4.99×10^(3)A∙W^(−1),normalized detectivity of 5.80×10^(12)cm∙Hz^(1/2)∙W^(−1),and fast response time of 3.13 ms,respectively,owing to the built-in electric field.Meanwhile,the highest values of responsivity,normalized detectivity,and response time for the photodetector based on the SnSe/SnSe_(2)heterostructure are 5.91×10^(3)A∙W^(−1),7.03×10^(12)cm∙Hz^(1/2)∙W−1,and 4.74 ms,respectively.And their photodetection performances transcend those of photodetectors based on individual SnSe_(2),SnS,SnSe,and other commonly used 2D materials.Our work has demonstrated an effective strategy to improve the performance of SnSe_(2)-based photodetectors and paves the way for their future commercialization.
基金Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1403203 and 2021YFA1600201)the National Natural Science Foundation of China (Grant No. 12274414)the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures (Contract No. JZHKYPT-2021-08)。
文摘Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quasi-one-dimensional PdBr_(2) by using combined measurements of the angle-resolved polarized Raman spectroscopy(ARPRS) and anisotropic optical absorption spectrum. The analyses of ARPRS data validate the anisotropic Raman properties of the PdBr_(2) flake.And anisotropic optical absorption spectrum of PdBr_(2) nanoflake demonstrates distinct optical linear dichroism reversal. Photodetector constructed by PdBr_(2) nanowire exhibits high responsivity of 747 A·W^(-1) and specific detectivity of 5.8×10^(12) Jones. And the photodetector demonstrates prominent polarization-sensitive photoresponsivity under 405-nm light irradiation with large photocurrent anisotropy ratio of 1.56, which is superior to those of most of previously reported quasi-one-dimensional counterparts. Our study offers fundamental insights into the strong optical anisotropy exhibited by PdBr_(2), establishing it as a promising candidate for miniaturization and integration trends of polarization-related applications.
基金This work was supported by the National Key Research and Development Program of China(Grant No.2020YFB2206103)。
文摘In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.
基金CSIR-09/0973(11599)/2021-EMR-I and SERB(Project no:CRG/2021/000255),Department of Science and Technology,Govt.of India。
文摘An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube furnace on a 40 nm TiO_(2)thin film deposited on a p-type Si(100)substrate.The CuO–TiO_(2)/TiO_(2)/p-Si(100)devices exhibited excellent rectification characteristics under dark and individual photoillumination conditions.The devices showed remarkable photo-response under broadband(300–1100 nm)light illumination at zero bias voltage,indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations.The maximum response of the devices is observed at 300 nm for an illumination power of 10 W.The response and recovery times were calculated as 86 ms and 78 ms,respectively.Moreover,under a small bias,the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions.The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices.Under illumination conditions,the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO_(2)/TiO_(2)interface.These characteristics make the CuO–TiO_(2)/TiO_(2)broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.
基金supported by the following research fundings including:the National Natural Science Foundation of China(Nos.62005114,62204078 and U22A2072)Natural Science Foundation of Henan-Excellent Youth Scholar(No.232300421092)Open Fund of the State Key Laboratory of Integrated Optoelectronics+(IOSKL2020KF01).
文摘Quantum dot-based up-conversion photodetector,in which an infrared photodiode(PD)and a quantum dot light-emitting diode(QLED)are back-to-back connected,is a promising candidate for low-cost infrared imaging.However,the huge efficiency losses caused by integrating the PD and QLED together hasn’t been studied sufficiently.This work revealed at least three origins for the efficiency losses.First,the PD unit and QLED unit usually didn’t work under optimal conditions at the same time.Second,the potential barriers and traps at the interconnection between PD and QLED units induced unfavorable carrier recombination.Third,much emitted visible light was lost due to the strong visible absorption in the PD unit.Based on the understandings on the loss mechanisms,the infrared up-conversion photodetectors were optimized and achieved a breakthrough photon-to-photon conversion efficiency of 6.9%.This study provided valuable guidance on how to optimize the way of integration for up-conversion photodetectors.
基金Shenzhen-Hong Kong-Macao Science and Technology Innovation Project(Category C),Grant/Award Number:SGDX2020110309360100Fundo para o Desenvolvimento das Ciências e da Tecnologia,Grant/Award Numbers:FDCT-0044/2020/A1,0034/2021/APD+3 种基金Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials,Grant/Award Number:2019B121205002Natural Science Foundation of Guangdong Province,Grant/Award Number:2019A1515012186National Natural Science Foundation of China,Grant/Award Numbers:61935017,62175268,62105292UM's research fund,Grant/Award Numbers:MYRG2018-00148-IAPME,MYRG2020-00151-IAPME。
文摘Two-dimensional Ruddlesden-Popper(2DRP)perovskites have attracted intense research interest for optoelectronic applications,due to their tunable optoelectronic properties and better environmental stability than their threedimensional counterparts.Furthermore,high-performance photodetectors based on single-crystal and polycrystalline thin-films 2DRP perovskites have shown great potential for practical application.However,the complex growth process of single-crystal membranes and uncontrollable phase distribution of polycrystalline films hinder the further development of 2DRP perovskites photodetectors.Herein,we report a series of high-performance photodetectors based on single-crystal-like phase-pure 2DRP perovskite films by designing a novel spacer source.Experimental and theoretical evidence demonstrates that phase-pure films substantially suppress defect states and ion migration.These highly sensitive photodetectors show I_(light)/I_(dark) ratio exceeding 3×10^(4),responsivities exceeding 16 A/W,and detectivities exceeding 3×10^(13) Jones,which are higher at least by 1 order than those of traditional mixed-phase thinfilms 2DRP devices(close to the reported single-crystal devices).More importantly,this strategy can significantly enhance the operational stability of optoelectronic devices and pave the way to large-area flexible productions.
基金supported by the National Key Research and Development Program of China(2020YFB2206103)National Natural Science Foundation of China(61975196)Youth Innovation Promotion Association Chinese Academy of Sciences(2021111)。
文摘High-performance germanium(Ge)waveguide photodetectors are designed and fabricated utilizing the inductivegain-peaking technique.With the appropriate integrated inductors,the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity.Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed.In this work,the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated,which indicates the high-speed performance of photodetectors using the inductive-gainpeaking technique.
基金Felix Carrascoso (ICMM-CSIC) for support with the metal evaporationfunding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (grant agreement n°755655,ERC-StG 2017 project2D-TOPSENSE)+5 种基金the Ministry of Science and Innovation (Spain) through the project PID2020-115566RB-I00support from the National Natural Science Foundation of China under grant No.61704129 and No.62011530438the Key Research and Development Program of Shaanxi (Program No.2021KW-02)Fundamental Research Funds for the Central Universities (JB211409)the grant from China Scholarship Council (CSC) under No.201908610178the support from European Union’s Horizon 2020 research and innovation program under the grant agreement 956813 (2Exciting)。
文摘Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics.Herein,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-performance photodetectors.A solvent-free WS_(2) film deposited on paper favors an effective electron-hole separation and hampers recombination.The as-prepared paper-based WS2 photodetectors exhibit a sensitive photoresponse over a wide spectral range spanning from ultraviolet(365 nm)to near-infrared(940 nm).Their responsivity value reaches up to~270 mA W^(−1) at 35 V under a power density of 35 mW cm^(−2).A high performance photodetector was achieved by controlling the environmental exposure as the ambient oxygen molecules were found to decrease the photoresponse and stability of the WS_(2) photodetector.Furthermore,we have built a spectrometer using such a paperbased WS_(2) device as the photodetecting component to illustrate its potential application.The present work could promote the development of cost-effective disposable photodetection devices.
基金supported in part by Engineering and Physical Science Research Council (EPSRC) through Engineering Fellowship (EP/R029644/1)Hetero-print Programme Grant (EP/R03480X/1)European Commission through grant references (H2020-MSCAITN2019-861166)。
文摘Disposable devices designed for single and/or multiple reliable measurements over a short duration have attracted considerable interest recently. However, these devices often use non-recyclable and non-biodegradable materials and wasteful fabrication methods. Herein, we present ZnO nanowires(NWs) based degradable high-performance UV photodetectors(PDs) on flexible chitosan substrate. Systematic investigations reveal the presented device exhibits excellent photo response, including high responsivity(55 A/W), superior specific detectivity(4×10^(14) jones), and the highest gain(8.5×10~(10)) among the reported state of the art biodegradable PDs. Further, the presented PDs display excellent mechanical flexibility under wide range of bending conditions and thermal stability in the measured temperature range(5–50 ℃).The biodegradability studies performed on the device, in both deionized(DI) water(pH≈6) and PBS solution(pH=7.4),show fast degradability in DI water(20 mins) as compared to PBS(48 h). These results show the potential the presented approach holds for green and cost-effective fabrication of wearable, and disposable sensing systems with reduced adverse environmental impact.
基金supported by the National Natural Science Foundation of China(No.62274148),Science Foundation of Zhejiang Sci-Tech University(Nos.22062337-Y,20062224-Y,22062291-Y)Guangxi key laboratory of precision navigation technology and application[Guilin University of Electronic Technology](No.DH202229).
文摘Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.
基金supported financially by the National Key R&D Program of China (Nos. 2018YFA0208501 and 2018YFA0703200)the National Natural Science Foundation of China (NSFC, Nos. 52103236, 91963212, 21875260)Beijing National Laboratory for Molecular Sciences (No. BNLMSCXXM-202005)。
文摘Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implementation of multifunctional detectors is based on the physical combination of optical lenses, gratings, and multiple photodetectors, the large size and its complex structure hinder the miniaturization, lightweight, and integration of devices. In contrast, perovskite materials have achieved remarkable progress in the field of multifunctional photodetectors due to their diverse crystal structures, simple morphology manipulation, and excellent optoelectronic properties. In this review, we first overview the crystal structures and morphology manipulation techniques of perovskite materials and then summarize the working mechanism and performance parameters of multifunctional photodetectors. Furthermore, the fabrication strategies of multifunctional perovskite photodetectors and their advancements are highlighted, including polarized light detection, spectral detection, angle-sensing detection, and selfpowered detection. Finally, the existing problems of multifunctional detectors and the perspectives of their future development are presented.
基金support by the Key Research Project of Zhejiang Laboratory(N.O.2021PE0AC02)the National Natural Science Foundation of China(N.O.11674210)the Project of Hetao Shenzhen-Hong Kong Science and Technology Innovation Cooperation Zone(HZQB-KCZYB-2020083).
文摘Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellent optoelectronic performance with high moisture and oxygen resistance,making them one of the promising candidates for high-performance photodetectors,but a simple,low-cost and reliable fabrication technology is urgently needed.Here,a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning.This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films.Furthermore,our devices based on laterally conducting split-ring structured photodetectors possess outstanding performance,including the maximum responsivity of 1.44×105 mA W^(−1),a response time of 150μs in 1.5 kHz and one-unit area<4×10-2 mm2.Based on these split-ring photodetector arrays,we realized three-dimensional gesture detection with up to 100 mm distance detection and up to 600 mm s^(−1) speed detection,for low-cost,integrative,and non-contact human-machine interfaces.Finally,we applied this MIT to wearable and flexible digital gesture recognition watch panel,safe and comfortable central controller integrated on the car screen,and remote control of the robot,demonstrating the broad potential applications.
基金supported by the National Natural Science Foundation of China(NSFC,Nos.62275002,51902078,62074048,62075053)the Anhui Provincial Natural Science Foundation(2008085MF205)the Fundamental Research Funds for the Central Universities(JZ2020HGTB0051,PA2020GDKC0024).
文摘Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film.A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105,a decent responsivity of~343 mA/W,a respectable specific detectivity of~2.56×10^(12)Jones,and a rapid response time of 4.5/379μs,under 730 nm light irradiation.The detector also displays an outstanding long-term air stability and operational durability.In addition,thanks to the excellent flexibility,the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests.Furthermore,the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate,suggesting a possible application in the area of flexible and wearable health monitoring.