In general, NAND flash memory has advantages in low power consumption, storage capacity, and fast erase/write performance in contrast to NOR flash. But, main drawback of the NAND flash memory is the slow access time f...In general, NAND flash memory has advantages in low power consumption, storage capacity, and fast erase/write performance in contrast to NOR flash. But, main drawback of the NAND flash memory is the slow access time for random read operations. Therefore, we proposed the new NAND flash memory package for overcoming this major drawback. We present a high performance and low power NAND flash memory system with a dual cache memory. The proposed NAND flash package consists of two parts, i.e., an NAND flash memory module, and a dual cache module. The new NAND flash memory system can achieve dramatically higher performance and lower power consumption compared with any conventionM NAND-type flash memory module. Our results show that the proposed system can reduce about 78% of write operations into the flash memory cell and about 70% of read operations from the flash memory cell by using only additional 3KB cache space. This value represents high potential to achieve low power consumption and high performance gain.展开更多
Based on the analysis of typical hybrid-type content addressable memory （CAM） structures, a hybrid-type CAM architecture with lower power consumption and higher stability was proposed. This design changes the connec...Based on the analysis of typical hybrid-type content addressable memory （CAM） structures, a hybrid-type CAM architecture with lower power consumption and higher stability was proposed. This design changes the connection of a N-type metal-oxide-semiconductor （NMOS） transistor in the control circuit, which greatly reduces the power consumption during comparison by making the match line simply discharge to the NMOS threshold voltage. A comparative study was made between conventional and the proposed hybrid-type CAM architecture by semiconductor manufacturing international corporation （SMIC） 65 nm complementary metal-oxide-semiconductor （CMOS） technology. Simulation shows that the power consumption of the proposed structure is reduced by 23%. Furthermore, the proposed design also adjusts the match line （ML） discharge path. In case that, the not and type （NAND-type） block is matched and the not or type （NOR-type） block is mismatched, the jitter voltage on the match line can be decreased largely.展开更多
目的:建立快速检测保健食品中非法添加的西地那非、那红地那非、他达拉非、氨基他达拉非、伪伐地那非、那莫西地那非、二乙胺他达拉非7种5型磷酸二酯酶抑制剂的离子迁移谱方法。方法:采用离子迁移谱正离子模式检测西地那非、那红地那非...目的:建立快速检测保健食品中非法添加的西地那非、那红地那非、他达拉非、氨基他达拉非、伪伐地那非、那莫西地那非、二乙胺他达拉非7种5型磷酸二酯酶抑制剂的离子迁移谱方法。方法:采用离子迁移谱正离子模式检测西地那非、那红地那非、他达拉非、氨基他达拉非、伪伐地那非、那莫西地那非、二乙胺他达拉非7种5型磷酸二酯酶抑制剂,离子源电压为2.5 k V,迁移管电压为7.5 k V,进气口温度和迁移管温度均为180℃。利用所建立方法对20批市售缓解体力疲劳类保健食品进行非法添加筛查,并通过LC-MS进行确认。结果:7种5型磷酸二酯酶抑制剂迁移时间在13.8~16.2 ms之间,检出限为0.05~2μg·m L^(-1)。20批市售样品中13批检出西地那非,2批检出他达拉非,2批同时检出西地那非与他达拉非,与LC-MS检测结果一致。结论:离子迁移谱检测方法快速、灵敏,可以作为缓解体力疲劳类保健食品中非法添加的西地那非、那红地那非、他达拉非、氨基他达拉非、伪伐地那非、那莫西地那非、二乙胺他达拉非7种5型磷酸二酯酶抑制剂的快速初筛方法。展开更多
基金This work was supported by Korea Research Foundation Grant funded by Korea Government(MOEHRD,Basic Research Promotion Fund)(Grant No.KRF-2005-003-D00270).
文摘In general, NAND flash memory has advantages in low power consumption, storage capacity, and fast erase/write performance in contrast to NOR flash. But, main drawback of the NAND flash memory is the slow access time for random read operations. Therefore, we proposed the new NAND flash memory package for overcoming this major drawback. We present a high performance and low power NAND flash memory system with a dual cache memory. The proposed NAND flash package consists of two parts, i.e., an NAND flash memory module, and a dual cache module. The new NAND flash memory system can achieve dramatically higher performance and lower power consumption compared with any conventionM NAND-type flash memory module. Our results show that the proposed system can reduce about 78% of write operations into the flash memory cell and about 70% of read operations from the flash memory cell by using only additional 3KB cache space. This value represents high potential to achieve low power consumption and high performance gain.
基金supported by the Natural Science Fund for Colleges and Universities in Anhui Province (KJ2013A006)
文摘Based on the analysis of typical hybrid-type content addressable memory （CAM） structures, a hybrid-type CAM architecture with lower power consumption and higher stability was proposed. This design changes the connection of a N-type metal-oxide-semiconductor （NMOS） transistor in the control circuit, which greatly reduces the power consumption during comparison by making the match line simply discharge to the NMOS threshold voltage. A comparative study was made between conventional and the proposed hybrid-type CAM architecture by semiconductor manufacturing international corporation （SMIC） 65 nm complementary metal-oxide-semiconductor （CMOS） technology. Simulation shows that the power consumption of the proposed structure is reduced by 23%. Furthermore, the proposed design also adjusts the match line （ML） discharge path. In case that, the not and type （NAND-type） block is matched and the not or type （NOR-type） block is mismatched, the jitter voltage on the match line can be decreased largely.
文摘目的:建立快速检测保健食品中非法添加的西地那非、那红地那非、他达拉非、氨基他达拉非、伪伐地那非、那莫西地那非、二乙胺他达拉非7种5型磷酸二酯酶抑制剂的离子迁移谱方法。方法:采用离子迁移谱正离子模式检测西地那非、那红地那非、他达拉非、氨基他达拉非、伪伐地那非、那莫西地那非、二乙胺他达拉非7种5型磷酸二酯酶抑制剂,离子源电压为2.5 k V,迁移管电压为7.5 k V,进气口温度和迁移管温度均为180℃。利用所建立方法对20批市售缓解体力疲劳类保健食品进行非法添加筛查,并通过LC-MS进行确认。结果:7种5型磷酸二酯酶抑制剂迁移时间在13.8~16.2 ms之间,检出限为0.05~2μg·m L^(-1)。20批市售样品中13批检出西地那非,2批检出他达拉非,2批同时检出西地那非与他达拉非,与LC-MS检测结果一致。结论:离子迁移谱检测方法快速、灵敏,可以作为缓解体力疲劳类保健食品中非法添加的西地那非、那红地那非、他达拉非、氨基他达拉非、伪伐地那非、那莫西地那非、二乙胺他达拉非7种5型磷酸二酯酶抑制剂的快速初筛方法。
