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Proton radiation effect of NPN-input operational amplifier under different bias conditions
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作者 姜柯 陆妩 +4 位作者 郭旗 何承发 王信 刘默寒 李小龙 《Journal of Semiconductors》 EI CAS CSCD 2015年第12期114-118,共5页
NPN-input bipolar operational amplifiers LM741 were irradiated with ^60Coγ-ray, 3 MeV protons and10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operati... NPN-input bipolar operational amplifiers LM741 were irradiated with ^60Coγ-ray, 3 MeV protons and10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with^60Coγ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current(±Icc)is another parameter that is sensitive to proton radiation,^60Coγ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of^60Coγ-ray, 3 MeV and 10 MeV proton irradiation. 展开更多
关键词 npn input bipolar operational amplifier proton radiation different biases radiation effect
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