Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepa...Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano- imprint technology. In this process, a combination of hot embossing nano-imprint lithography （HE-NIL） and ultraviolet nano-imprint lithography （UV-NIL） is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature （Tc） of the superconducting NbN meander nanowires is about 5 K and the critical current （lc） is about 3.5 μA at 2.5 K.展开更多
Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,...Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM devices.In this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically investigated.The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments.The read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area consumption.As such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.展开更多
Chromium atom photolithography gratings are a promising technology for the development of nanoscale length standard substances due to their high accuracy,uniformity,and consistency.However,the inherent difference betw...Chromium atom photolithography gratings are a promising technology for the development of nanoscale length standard substances due to their high accuracy,uniformity,and consistency.However,the inherent difference between the interaction of positive and negative frequency detuning standing wave field and the atoms can cause a difference in the adjacent peak-to-valley heights of the grating in positive and negative frequency detuning chromium atom lithography,which greatly reduces its accuracy.In this study,we performed a controlled variable growth simulation using the semi-classical theoretical model and Monte Carlo method with trajectory tracking and ballistic deposition methods to investigate the influence of key experimental parameters on the surface growth process of positive and negative frequency detuning atomic lithography gratings.We established a theoretical model based on simulation results and summarized empirical equations to guide the selection of experimental parameters.Our simulations achieved uniform positive and negative frequency detuning atomic lithography gratings with a period of 1/4 of the wavelength corresponding to the atomic transition frequency,and adjacent peak-to-valley heights differing by no more than 2 nm,providing an important theoretical reference for the controllable fabrication of these gratings.展开更多
The development of nanoelectronics and nanotechnologies has been boosted significantly by the emergence of 2D materials because of their atomic thickness and peculiar properties,and developing a universal,precise patte...The development of nanoelectronics and nanotechnologies has been boosted significantly by the emergence of 2D materials because of their atomic thickness and peculiar properties,and developing a universal,precise patterning technology for single-layer 2D materials is critical for assembling nanodevices.Demonstrated here is a nanomachining technique using electrical breakdown by an AFM tip to fabricate nanopores,nanostrips,and other nanostructures on demand.This can be achieved by voltage scanning or applying a constant voltage while moving the tip.By measuring the electrical current,the formation process on single-layer materials was shown quantitatively.The present results provide evidence of successful pattern fabrication on single-layer MoS2,boron nitride,and graphene,although further confirmation is still needed.The proposed method holds promise as a general nanomachining technology for the future.展开更多
Lithography is a pivotal micro/nanomanufacturing technique,facilitating performance enhancements in an extensive array of devices,encompassing sensors,transistors,and photovoltaic devices.The key to creating highly pr...Lithography is a pivotal micro/nanomanufacturing technique,facilitating performance enhancements in an extensive array of devices,encompassing sensors,transistors,and photovoltaic devices.The key to creating highly precise,multiscale-distributed patterned structures is the precise control of the lithography process.Herein,high-quality patterned ZnO nanostructures are constructed by systematically tuning the exposure and development times during lithography.By optimizing these parameters,ZnO nanorod arrays with line/hole arrangements are successfully prepared.Patterned ZnO nanostructures with highly controllable morphology and structure possess discrete three-dimensional space structure,enlarged surface area,and improved light capture ability,which achieve highly efficient energy conversion in perovskite solar cells.The lithography process management for these patterned ZnO nanostructures provides important guidance for the design and construction of complex nanostructures and devices with excellent performance.展开更多
基金supported by the National Basic Research Program of China(Grant Nos.2011CBA00106 and 2009CB929102)the National Natural Science Foundation of China(Grant Nos.11104333 and 10974243)
文摘Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano- imprint technology. In this process, a combination of hot embossing nano-imprint lithography （HE-NIL） and ultraviolet nano-imprint lithography （UV-NIL） is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature （Tc） of the superconducting NbN meander nanowires is about 5 K and the critical current （lc） is about 3.5 μA at 2.5 K.
基金supported in part by the Open Fund of State Key Laboratory of Integrated Chips and Systems,Fudan Universityin part by the National Science Foundation of China under Grant No.62304133 and No.62350610271.
文摘Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM devices.In this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically investigated.The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments.The read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area consumption.As such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.
基金Project supported by the National Natural Science Foundation of China(Grant No.62075165)the National Key Research and Development Program of China(Grant Nos.2022YFF0607600 and 2022YFF0605502)+3 种基金the Special Development Funds for Major Projects of Shanghai Zhangjiang National Independent Innovation Demonstration Zone(Grant No.ZJ2021ZD008)the Shanghai Natural Science Foundation(Grant No.21ZR1483100)the Shanghai Academic/Technology Research Leader(Grant No.21XD1425000)the Opening Fund of Shanghai Key Laboratory of Online Detection and Control Technology(Grant No.ZX2020101)。
文摘Chromium atom photolithography gratings are a promising technology for the development of nanoscale length standard substances due to their high accuracy,uniformity,and consistency.However,the inherent difference between the interaction of positive and negative frequency detuning standing wave field and the atoms can cause a difference in the adjacent peak-to-valley heights of the grating in positive and negative frequency detuning chromium atom lithography,which greatly reduces its accuracy.In this study,we performed a controlled variable growth simulation using the semi-classical theoretical model and Monte Carlo method with trajectory tracking and ballistic deposition methods to investigate the influence of key experimental parameters on the surface growth process of positive and negative frequency detuning atomic lithography gratings.We established a theoretical model based on simulation results and summarized empirical equations to guide the selection of experimental parameters.Our simulations achieved uniform positive and negative frequency detuning atomic lithography gratings with a period of 1/4 of the wavelength corresponding to the atomic transition frequency,and adjacent peak-to-valley heights differing by no more than 2 nm,providing an important theoretical reference for the controllable fabrication of these gratings.
基金supported by the National Natural Science Foundation of China(Grant Nos.12075191,12388101,and 12241201)the Fundamental Research Funds for the Central Universities(Grant No.D5000230120)the Natural Science Basic Research Program of Shaanxi Province(Grant No.2023-JC-YB-541).
文摘The development of nanoelectronics and nanotechnologies has been boosted significantly by the emergence of 2D materials because of their atomic thickness and peculiar properties,and developing a universal,precise patterning technology for single-layer 2D materials is critical for assembling nanodevices.Demonstrated here is a nanomachining technique using electrical breakdown by an AFM tip to fabricate nanopores,nanostrips,and other nanostructures on demand.This can be achieved by voltage scanning or applying a constant voltage while moving the tip.By measuring the electrical current,the formation process on single-layer materials was shown quantitatively.The present results provide evidence of successful pattern fabrication on single-layer MoS2,boron nitride,and graphene,although further confirmation is still needed.The proposed method holds promise as a general nanomachining technology for the future.
基金financially supported by the National Key Research and Development Program of China(No.2018YFA0703500)the National Natural Science Foundation of China(Nos.52232006,52188101,52102153,52072029,51991340,and 51991342)+3 种基金the Overseas Expertise Introduction Projects for Discipline Innovation,China(No.B14003)the Fundamental Research Funds for the Central Universities,China(Nos.FRF-TP-18-001C1 and 06500160)the Interdisciplinary Research Project for Young Teachers of USTB(Fundamental Research Funds for the Central Universities)(Nos.FRF-IDRY-21-019 and FRFIDRY-21-014)the State Key Lab for Advanced Metals a nd Materials,China(No.2023-Z01)。
文摘Lithography is a pivotal micro/nanomanufacturing technique,facilitating performance enhancements in an extensive array of devices,encompassing sensors,transistors,and photovoltaic devices.The key to creating highly precise,multiscale-distributed patterned structures is the precise control of the lithography process.Herein,high-quality patterned ZnO nanostructures are constructed by systematically tuning the exposure and development times during lithography.By optimizing these parameters,ZnO nanorod arrays with line/hole arrangements are successfully prepared.Patterned ZnO nanostructures with highly controllable morphology and structure possess discrete three-dimensional space structure,enlarged surface area,and improved light capture ability,which achieve highly efficient energy conversion in perovskite solar cells.The lithography process management for these patterned ZnO nanostructures provides important guidance for the design and construction of complex nanostructures and devices with excellent performance.
