Organic light emitting diodes （OLEDs） incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium （Liq） doped into 4＇ 7- diphyenyl-1,10-phenanthroline （BPhen） as ETL and a p-doping tr...Organic light emitting diodes （OLEDs） incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium （Liq） doped into 4＇ 7- diphyenyl-1,10-phenanthroline （BPhen） as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane （F4- TCNQ） doped into 4,4′, 4″-tris （3-methylphenylphenylamono） triphe- nylamine （m-MTDATA） are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency Of organic light-emitting diodes are improved significantly after introducing an n-doping （BPhen：33wt% Liq） layer as an electron transport layer （ETL） and a p-doping layer composed of m-MTDATA and F4- TCNQ as a hole transport layer （HTL）. Compared with the control device （without doping） , the current efficiency and power efficiency of the most efficient device （device C） are enhanced by approximately 51% and 89% ,respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone.展开更多
Motivated by the recent advances of transition-metal-nitrogen-carbon (TM-N-C) materials in catalysis, we investigate the electronic structure and transport properties of FeN3-embedded armchair and zigzag graphene nano...Motivated by the recent advances of transition-metal-nitrogen-carbon (TM-N-C) materials in catalysis, we investigate the electronic structure and transport properties of FeN3-embedded armchair and zigzag graphene nanoribbons (FeN3@AGNRs, FeN3@ZGNRs) with different widths. The first-principles results indicate that the FeN3 induces significant changes on the band structures of both ZGNRs and AGNRs, making the resultant systems quite different from the pristine ones and own room-temperature stable ferromagnetic (FM) ground states. While only FeN3@AGNRs possess a significant spin-dependent negative differential resistance (NDR) and a striking current polarization (nearly 100%) behaviors, due to that FeN3 introduces two isolated spin-down states, which contribute current with different performances when they couple with different frontier orbits. It is suggested that by embedding FeN3 complexes, AGNRs can be used to build spin devices in spintronics.展开更多
The anisotropic transport property was investigated in a phase separation La（0.67）Ca（0.33）MnO3（LCMO） film grown on（001）-oriented Nd GaO3（NGO） substrate. It was found that the resistivity along the b-axis is ...The anisotropic transport property was investigated in a phase separation La（0.67）Ca（0.33）MnO3（LCMO） film grown on（001）-oriented Nd GaO3（NGO） substrate. It was found that the resistivity along the b-axis is much higher than that along the a-axis. Two resistivity peaks were observed in the temperature dependent measurement along the b-axis, one located at 91 K and the other centered at 165 K. Moreover, we also studied the response of the resistivities along the two axes to various electric currents, magnetic fields, and light illuminations. The resistivities along the two axes are sensitive to the magnetic field. However, the electric current and light illumination can influence the resistivity along the b-axis obviously, but have little effect on the resistivity along the a-axis. Based on these results, we believe that an anisotropicstrain-controlled MnO6 octahedra shear-mode deformation may provide a mechanism of conduction filaments paths along the a-axis, which leads to the anisotropic transport property.展开更多
采用Bphen和BCP制成双电子传输层(Double electron transport layers,DETLs)的有机发光二极管器件,与Bphen单独作ETL的器件相比,DETLs器件具有较小的空穴漏电流,效率提升10%。与BCP独自作ETL的器件相比,更多的电子注入使DETLs器件的效率...采用Bphen和BCP制成双电子传输层(Double electron transport layers,DETLs)的有机发光二极管器件,与Bphen单独作ETL的器件相比,DETLs器件具有较小的空穴漏电流,效率提升10%。与BCP独自作ETL的器件相比,更多的电子注入使DETLs器件的效率在50~600 m A/cm2的电流范围内没有衰减。BCP作ETL的器件的效率从50 m A/cm2时的2.5 cd/A衰减至300 m A/cm2的2.1 cd/A,衰减了16%。Cs2CO3∶BCP独自作ETL的器件效率在50~300 m A/cm2的电流范围内衰减了30%,而Bphen/Cs2CO3∶BCP作DETLs的器件效率在50~600 m A/cm2的电流范围内衰减幅度为0,原因是Bphen阻挡了Cs原子扩散至发光层。展开更多
文摘Organic light emitting diodes （OLEDs） incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium （Liq） doped into 4＇ 7- diphyenyl-1,10-phenanthroline （BPhen） as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane （F4- TCNQ） doped into 4,4′, 4″-tris （3-methylphenylphenylamono） triphe- nylamine （m-MTDATA） are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency Of organic light-emitting diodes are improved significantly after introducing an n-doping （BPhen：33wt% Liq） layer as an electron transport layer （ETL） and a p-doping layer composed of m-MTDATA and F4- TCNQ as a hole transport layer （HTL）. Compared with the control device （without doping） , the current efficiency and power efficiency of the most efficient device （device C） are enhanced by approximately 51% and 89% ,respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone.
基金supported by the National Natural Science Foundation of China(No.21643011)the Fundamental Research Foundations for the Central Universities(No.ZYGX2016J067)
文摘Motivated by the recent advances of transition-metal-nitrogen-carbon (TM-N-C) materials in catalysis, we investigate the electronic structure and transport properties of FeN3-embedded armchair and zigzag graphene nanoribbons (FeN3@AGNRs, FeN3@ZGNRs) with different widths. The first-principles results indicate that the FeN3 induces significant changes on the band structures of both ZGNRs and AGNRs, making the resultant systems quite different from the pristine ones and own room-temperature stable ferromagnetic (FM) ground states. While only FeN3@AGNRs possess a significant spin-dependent negative differential resistance (NDR) and a striking current polarization (nearly 100%) behaviors, due to that FeN3 introduces two isolated spin-down states, which contribute current with different performances when they couple with different frontier orbits. It is suggested that by embedding FeN3 complexes, AGNRs can be used to build spin devices in spintronics.
基金Project supported by the National Basic Research Program of China(Grant Nos.2011CB921801,2012CB921403,and 2013CB921701)the National Natural Science Foundation of China(Grant Nos.11074285,51372064,and 11134007)
文摘The anisotropic transport property was investigated in a phase separation La（0.67）Ca（0.33）MnO3（LCMO） film grown on（001）-oriented Nd GaO3（NGO） substrate. It was found that the resistivity along the b-axis is much higher than that along the a-axis. Two resistivity peaks were observed in the temperature dependent measurement along the b-axis, one located at 91 K and the other centered at 165 K. Moreover, we also studied the response of the resistivities along the two axes to various electric currents, magnetic fields, and light illuminations. The resistivities along the two axes are sensitive to the magnetic field. However, the electric current and light illumination can influence the resistivity along the b-axis obviously, but have little effect on the resistivity along the a-axis. Based on these results, we believe that an anisotropicstrain-controlled MnO6 octahedra shear-mode deformation may provide a mechanism of conduction filaments paths along the a-axis, which leads to the anisotropic transport property.
文摘采用Bphen和BCP制成双电子传输层(Double electron transport layers,DETLs)的有机发光二极管器件,与Bphen单独作ETL的器件相比,DETLs器件具有较小的空穴漏电流,效率提升10%。与BCP独自作ETL的器件相比,更多的电子注入使DETLs器件的效率在50~600 m A/cm2的电流范围内没有衰减。BCP作ETL的器件的效率从50 m A/cm2时的2.5 cd/A衰减至300 m A/cm2的2.1 cd/A,衰减了16%。Cs2CO3∶BCP独自作ETL的器件效率在50~300 m A/cm2的电流范围内衰减了30%,而Bphen/Cs2CO3∶BCP作DETLs的器件效率在50~600 m A/cm2的电流范围内衰减幅度为0,原因是Bphen阻挡了Cs原子扩散至发光层。
