Bismuth （Bi）-doped materials have attracted a great deal of attention because of their broadband near- infrared （near-IR） emission around the wavelength utilized in telecommunications. In this study, broad near-IR...Bismuth （Bi）-doped materials have attracted a great deal of attention because of their broadband near- infrared （near-IR） emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1100 to 1650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi22- dimers. The precipitation of β-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass,展开更多
基金supported by the National Natural Science Foundation of China(No.61205181)Zhejiang Provincial Natural Science Foundation of China(No.LQ12E02003)+2 种基金the Natural Science Foundation of Ningbo City(No.2012A610122)the Scientific Research Fund of Zhejiang Provincial Education Department(No.Y201120457)K.C.Wong Magna Fund in Ningbo University
文摘Bismuth （Bi）-doped materials have attracted a great deal of attention because of their broadband near- infrared （near-IR） emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1100 to 1650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi22- dimers. The precipitation of β-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass,
