Ascientific research center on nanometer technology was set up on October 30, 2000 at the Chinese Academy of Sciences (CAS). The aim of the center, called CAS Center for Nanometer Science and Technology, will strive t...Ascientific research center on nanometer technology was set up on October 30, 2000 at the Chinese Academy of Sciences (CAS). The aim of the center, called CAS Center for Nanometer Science and Technology, will strive to enhance China’s research strength, realize its commercialization and increase its competitiveness in the field, says Prof. Bai Chunli, CAS Vice President.展开更多
Abstract： This paper presents a novel poly （PC） and active （RX） comer rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX co...Abstract： This paper presents a novel poly （PC） and active （RX） comer rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX comer rounding equations have been derived based on an assumption that the comer rounding area is a fragment of a circle. The equations were modified to reflect the gouging effect of physical silicon wafers. The modified general equations were implemented in the SPICE model to enable the model to describe the comer rounding effect. The good fittings between the SPICE model simulation results and the silicon data demonstrated in this paper proved that the designed comer rounding model is practical and accurate. Key words： SPICE model; MOSFETs; poly and active; comer rounding; nanometer technology展开更多
文摘Ascientific research center on nanometer technology was set up on October 30, 2000 at the Chinese Academy of Sciences (CAS). The aim of the center, called CAS Center for Nanometer Science and Technology, will strive to enhance China’s research strength, realize its commercialization and increase its competitiveness in the field, says Prof. Bai Chunli, CAS Vice President.
文摘Abstract： This paper presents a novel poly （PC） and active （RX） comer rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX comer rounding equations have been derived based on an assumption that the comer rounding area is a fragment of a circle. The equations were modified to reflect the gouging effect of physical silicon wafers. The modified general equations were implemented in the SPICE model to enable the model to describe the comer rounding effect. The good fittings between the SPICE model simulation results and the silicon data demonstrated in this paper proved that the designed comer rounding model is practical and accurate. Key words： SPICE model; MOSFETs; poly and active; comer rounding; nanometer technology
