The bias dependence of radiation-induced narrow-width channel effects(RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs) is investigated. The threshold voltage of the narrow-width6...The bias dependence of radiation-induced narrow-width channel effects(RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs) is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.展开更多
本文对高重频窄脉宽多波长激光器的可靠性进行了分析及验证,建立了高重频窄脉宽多波长激光器的框图法模型。在初始设计阶段开展激光器的可靠性分析,定量计算了激光器各单元的可靠性结果,包括失效率λ和平均无故障工作时间(Mean Time Bet...本文对高重频窄脉宽多波长激光器的可靠性进行了分析及验证,建立了高重频窄脉宽多波长激光器的框图法模型。在初始设计阶段开展激光器的可靠性分析,定量计算了激光器各单元的可靠性结果,包括失效率λ和平均无故障工作时间(Mean Time Between Failure,MTBF),预计激光器整机的无故障工作时间为1798.8 h。为满足激光器的设计指标要求,通过选用高品质晶体、半导体激光器的Ⅰ级降额设计和电源控制的冗余设计,实现激光器的可靠性优化。经优化设计后,激光器整机的无故障工作时间达2260.9 h。搭建激光器整机对可靠性优化设计结果进行验证,验证结果表明:激光器无故障工作时间可达2400 h。展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11605282,11505282 and U1532261the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15
文摘The bias dependence of radiation-induced narrow-width channel effects(RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs) is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.
文摘本文对高重频窄脉宽多波长激光器的可靠性进行了分析及验证,建立了高重频窄脉宽多波长激光器的框图法模型。在初始设计阶段开展激光器的可靠性分析,定量计算了激光器各单元的可靠性结果,包括失效率λ和平均无故障工作时间(Mean Time Between Failure,MTBF),预计激光器整机的无故障工作时间为1798.8 h。为满足激光器的设计指标要求,通过选用高品质晶体、半导体激光器的Ⅰ级降额设计和电源控制的冗余设计,实现激光器的可靠性优化。经优化设计后,激光器整机的无故障工作时间达2260.9 h。搭建激光器整机对可靠性优化设计结果进行验证,验证结果表明:激光器无故障工作时间可达2400 h。