本研究专注于稀土金属Y和La掺下HfO2薄膜的铁电性。采用脉冲激光沉积技术,在(001)取向SrTiO3衬底上利用La0.7Sr0.3MnO3薄膜作为底电极,成功实现了沿(111)取向生长的外延薄膜。研究发现,掺杂下的HfO2薄膜呈现出较好的结晶性,在室温下压...本研究专注于稀土金属Y和La掺下HfO2薄膜的铁电性。采用脉冲激光沉积技术,在(001)取向SrTiO3衬底上利用La0.7Sr0.3MnO3薄膜作为底电极,成功实现了沿(111)取向生长的外延薄膜。研究发现,掺杂下的HfO2薄膜呈现出较好的结晶性,在室温下压电系数d33约为6 pm/V,畴翻转可达180˚,剩余极化强度可达到12.91 μC/cm2,表现出良好的铁电性。这些实验成果为基于HfO2薄膜的电子器件设计提供了重要的实验基础。This study focuses on the ferroelectric properties of Y and La doped HfO2 thin films. The epitaxial films grown along the (111) orientation were successfully prepared on (001)-oriented SrTiO3 substrate using La0.7Sr0.3MnO3 film as the substrate electrode by Pulsed laser deposition technique. The results show that the doped HfO2 films exhibit good crystallinity, the piezoelectric coefficient d33 is about 6 pm/V at room temperature, the domain inversion can reach 180˚, and the residual polarization strength can reach 12.91 μC/cm2, exhibit good ferroelectric properties. These experimental results provide an important experimental basis for the design of electronic devices based on HfO2 thin films.展开更多
文摘本研究专注于稀土金属Y和La掺下HfO2薄膜的铁电性。采用脉冲激光沉积技术,在(001)取向SrTiO3衬底上利用La0.7Sr0.3MnO3薄膜作为底电极,成功实现了沿(111)取向生长的外延薄膜。研究发现,掺杂下的HfO2薄膜呈现出较好的结晶性,在室温下压电系数d33约为6 pm/V,畴翻转可达180˚,剩余极化强度可达到12.91 μC/cm2,表现出良好的铁电性。这些实验成果为基于HfO2薄膜的电子器件设计提供了重要的实验基础。This study focuses on the ferroelectric properties of Y and La doped HfO2 thin films. The epitaxial films grown along the (111) orientation were successfully prepared on (001)-oriented SrTiO3 substrate using La0.7Sr0.3MnO3 film as the substrate electrode by Pulsed laser deposition technique. The results show that the doped HfO2 films exhibit good crystallinity, the piezoelectric coefficient d33 is about 6 pm/V at room temperature, the domain inversion can reach 180˚, and the residual polarization strength can reach 12.91 μC/cm2, exhibit good ferroelectric properties. These experimental results provide an important experimental basis for the design of electronic devices based on HfO2 thin films.
