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Basic properties of a new Nd-doped laser crystal: Nd:GdNbO4
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作者 Shoujun DING Qingli ZHANG +2 位作者 Wenpeng LIU Jianqiao LUO Dunlu SUN 《Frontiers of Optoelectronics》 EI CSCD 2017年第2期111-116,共6页
A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd:GdNbO4 crystal with pho... A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd:GdNbO4 crystal with phosphoric acid etchant. Mechanical proper- ties (such as hardness, yield strength, fracture toughness, and brittle index) of the as-grown crystal were system- atically estimated on the basis of the Vickers hardness test for the first time. The transmission spectrum of Nd: GdNbO4 was measured in the wavelength range of 320- 2400 nm at room temperature, and the absorption peaks were assigned. Results hold great significance for further research on Nd:GdNbO4. 展开更多
关键词 nd:gdnbo4 laser crystal mechanical proper-ties chemical etching
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