Nd2O3 doped BaTiO3ceramics（the additive content was respectively 0.001, 0.002, 0.003, 0.005, 0.01 molar ratio）were prepared by Sol-Gel method to study their dielectric characteristics and electric conductivities thr...Nd2O3 doped BaTiO3ceramics（the additive content was respectively 0.001, 0.002, 0.003, 0.005, 0.01 molar ratio）were prepared by Sol-Gel method to study their dielectric characteristics and electric conductivities through X-ray photoelectron spectrum （XPS）. The results showed that the dielectric characteristics of Nd2O3 doped BaTiO3 ceramics were improved by doping. When Nd2O3 content was 0.003 mol, the results were even better, the dielectric constant was increased, the dielectric loss was decreased, the Curie-temperature （Tc） was 110 ℃, and the frequency characteristic was also good. The resistivity of Nd2O3 doped BaTiO3 ceramics was lower than that of pure BaTiO3 ceramics, when Nd2O3 content was 0.001 mol,the resistivity was （2.364×）108 Ω·m, the smallest. The grain resistance of Nd2O3 doped BaTiO3 ceramics exhibited NTC effect, but the grain boundary resistance showed PTC effect, and the grain boundary resistance was larger than that of the grain resistance, so the PTC effect originated from the grain boundary. The analysis of the element binding energy through X-ray photoelectron spectrum were indicated that the quantivalence of Ba2+and Ti4+in Nd2O3 doped BaTiO3 ceramics was variable, and resulted in the improvement of the conductibility of BaTiO3 ceramics.展开更多
The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor...The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor increases with the content of Nd_2O_3 in the range of 0～0.04 (%,mol fraction). However when the content of Nd_2O_3 is more than 0.04 (%,mol fraction),the varistor voltage of ZnO varistor decreases with the content increase. The microstructure analysis indicates that a small amount of new compound with Nd exists at ZnO grain boundary and hinders the movement of grain boundary,which decreases the size of ZnO grain and makes the grain size and distribution homogeneous,as a result,additive (Nd_2O_3) raises the varistor voltage of the varistor greatly.展开更多
文摘Nd2O3 doped BaTiO3ceramics（the additive content was respectively 0.001, 0.002, 0.003, 0.005, 0.01 molar ratio）were prepared by Sol-Gel method to study their dielectric characteristics and electric conductivities through X-ray photoelectron spectrum （XPS）. The results showed that the dielectric characteristics of Nd2O3 doped BaTiO3 ceramics were improved by doping. When Nd2O3 content was 0.003 mol, the results were even better, the dielectric constant was increased, the dielectric loss was decreased, the Curie-temperature （Tc） was 110 ℃, and the frequency characteristic was also good. The resistivity of Nd2O3 doped BaTiO3 ceramics was lower than that of pure BaTiO3 ceramics, when Nd2O3 content was 0.001 mol,the resistivity was （2.364×）108 Ω·m, the smallest. The grain resistance of Nd2O3 doped BaTiO3 ceramics exhibited NTC effect, but the grain boundary resistance showed PTC effect, and the grain boundary resistance was larger than that of the grain resistance, so the PTC effect originated from the grain boundary. The analysis of the element binding energy through X-ray photoelectron spectrum were indicated that the quantivalence of Ba2+and Ti4+in Nd2O3 doped BaTiO3 ceramics was variable, and resulted in the improvement of the conductibility of BaTiO3 ceramics.
文摘The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor increases with the content of Nd_2O_3 in the range of 0～0.04 (%,mol fraction). However when the content of Nd_2O_3 is more than 0.04 (%,mol fraction),the varistor voltage of ZnO varistor decreases with the content increase. The microstructure analysis indicates that a small amount of new compound with Nd exists at ZnO grain boundary and hinders the movement of grain boundary,which decreases the size of ZnO grain and makes the grain size and distribution homogeneous,as a result,additive (Nd_2O_3) raises the varistor voltage of the varistor greatly.
基金supported by the Jiangxi Provincial Natural Science Foundation,China(No.20192BAB216009)the Science and Technology Planning Project of Hunan Province,China(No.2019WK2051)Science and Technology Project of Changsha,Hunan,China(No.kh2003023)。
