240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge ef...240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.展开更多
High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were ...High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.展开更多
In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona dischar...In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.展开更多
The effect of ultraviolet(UV)radiation and biocide benzalkonium chloride(BKC)on fungal-induced corrosion of AA7075 induced by Aspergillus terreus(A.terreus)was deeply studied using analysis of biological activity,surf...The effect of ultraviolet(UV)radiation and biocide benzalkonium chloride(BKC)on fungal-induced corrosion of AA7075 induced by Aspergillus terreus(A.terreus)was deeply studied using analysis of biological activity,surface analysis,and electrochemical measurements.Results demonstrated that the planktonic and sessile spore concentrations decline by more than two orders of magnitude when UV radiation and BKC are combinedly used compared with the control.UV radiation can inhibit the biological activity of A.terreus and influence the stability of passive film of AA7075.Except for direct disinfection,the physical adsorption of BKC on the specimen can effectively inhibit the attachment of A.terreus.The combination of UV radiation and BKC can much more effectively inhibit the corrosion of AA,especially pitting corrosion,due to their synergistic effect.The combined application of UV radiation and BKC can be a good method to effectively inhibit fungal-induced corrosion.展开更多
Wireless ultraviolet communication is a new type of communication mode. It refers to the transmission of information through the scattering of ultraviolet light by atmospheric particles and aerosol particles. The scat...Wireless ultraviolet communication is a new type of communication mode. It refers to the transmission of information through the scattering of ultraviolet light by atmospheric particles and aerosol particles. The scattering characteristics can enable the wireless ultraviolet communication system to transmit ultraviolet light signals in a non-line-of-sight manner, which overcomes the weakness that other free space optical communications must work in a line-of-sight manner. Based on the basic theory of scattering and absorption in atmospheric optics, taking the ultraviolet light with a wavelength of 266 nm as an example, this paper introduces the classical model of non-line-of-sight single-scattering coplanarity based on the ellipsoid coordinate system. The model is used to simulate and analyze the relationship between the geometric parameters such as transmission distance, transceiver elevation angle and transceiver half-angle and the received optical power per unit area. The performance of non-line-of-sight ultraviolet communication system in rain and fog environment is discussed respectively. The results show that the transmission quality of non-line-of-sight ultraviolet atmospheric propagation is greatly affected by the communication distance. As the distance increases, the received light power per unit area gradually decreases. In addition, increasing the emission elevation angle, the receiving elevation angle and the receiving half angle is an important way to improve the system performance.展开更多
基金This work was supported by National Key R&D Program of China(2022YFB3605103)the National Natural Science Foundation of China(62204241,U22A2084,62121005,and 61827813)+3 种基金the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,and 20230101107JC)the Youth Innovation Promotion Association of CAS(2023223)the Young Elite Scientist Sponsorship Program By CAST(YESS20200182)the CAS Talents Program(E30122E4M0).
文摘240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.
基金Research of the photoelectric properties of theκ(ε)-Ga_(2)O_(3)films was supported by the Russian Science Foundation,grant number 20-79-10043-P.Fabrication of the ultraviolet detectors based on theκ(ε)-Ga_(2)O_(3)layers was supported by the grant under the Decree of the Government of the Rus-sian Federation No.220 of 09 April 2010(Agreement No.075-15-2022-1132 of 01 July 2022)Research of the structural prop-erties of theκ(ε)-Ga_(2)O_(3)was supported by the St.Petersburg State University,grant number 94034685.
文摘High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.
基金supported by the National Natural Science Foundation of China(Grant Nos.62174113,12174275,and 61874139)the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2019B1515120057,2023A1515140094,and 2023A1515110730)。
文摘In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.
基金supported by the Guangdong Basic and Applied Basic Research Foundation,China(No.2023A1515012146)the National Natural Science Foundation of China(No.52271083)+1 种基金the Fundamental Research Funds for the Central Universities,China(No.22qntd0801)the Shanghai Engineering Technology Research Centre of Deep Offshore Material,China(No.19DZ2253100)。
文摘The effect of ultraviolet(UV)radiation and biocide benzalkonium chloride(BKC)on fungal-induced corrosion of AA7075 induced by Aspergillus terreus(A.terreus)was deeply studied using analysis of biological activity,surface analysis,and electrochemical measurements.Results demonstrated that the planktonic and sessile spore concentrations decline by more than two orders of magnitude when UV radiation and BKC are combinedly used compared with the control.UV radiation can inhibit the biological activity of A.terreus and influence the stability of passive film of AA7075.Except for direct disinfection,the physical adsorption of BKC on the specimen can effectively inhibit the attachment of A.terreus.The combination of UV radiation and BKC can much more effectively inhibit the corrosion of AA,especially pitting corrosion,due to their synergistic effect.The combined application of UV radiation and BKC can be a good method to effectively inhibit fungal-induced corrosion.
文摘Wireless ultraviolet communication is a new type of communication mode. It refers to the transmission of information through the scattering of ultraviolet light by atmospheric particles and aerosol particles. The scattering characteristics can enable the wireless ultraviolet communication system to transmit ultraviolet light signals in a non-line-of-sight manner, which overcomes the weakness that other free space optical communications must work in a line-of-sight manner. Based on the basic theory of scattering and absorption in atmospheric optics, taking the ultraviolet light with a wavelength of 266 nm as an example, this paper introduces the classical model of non-line-of-sight single-scattering coplanarity based on the ellipsoid coordinate system. The model is used to simulate and analyze the relationship between the geometric parameters such as transmission distance, transceiver elevation angle and transceiver half-angle and the received optical power per unit area. The performance of non-line-of-sight ultraviolet communication system in rain and fog environment is discussed respectively. The results show that the transmission quality of non-line-of-sight ultraviolet atmospheric propagation is greatly affected by the communication distance. As the distance increases, the received light power per unit area gradually decreases. In addition, increasing the emission elevation angle, the receiving elevation angle and the receiving half angle is an important way to improve the system performance.
