Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).

Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes

In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.

PHOTOEMISSION STABILITY OF MULTIALKALI PHOTOCATHODES WITH NEGATIVE ELECTRON AFFINITY

In this paper a negative electron affinity （NEA） multialkali photocathode of （Na2KSb-Cs）-O-Cs structure is fabricated by new technology. It is found that its emission stability is much better than that of the NEA GaAs photocathode, but is inferior to that of the conventional Na2KSb（Cs）. After 70 hour performance in a pumping vacuum system, the emission sensitivity of the NEA （Na2KSb-Cs）-O-Cs photocathode drops only by 2.5%. The emission stability is closely related to the states of the activation cesium and oxygen during activation, best results being obtained with cesium ions and excited oxygen. Furthermore, better photoemission sensitivity and emission stability may be obtained if the cathode is illuminated by intense white light during the activation process. The performance of the NEA （Na2KSb-Cs）-O-Cs cathode which has not been illuminated by intense white light during activation may be improved by the illumination even during operation intermission.

NEA光电阴极的(Cs,O)激活工艺研究

在自行研制的负电子亲和势光电阴极性能评估实验系统上 ,首次利用动态光谱响应技术和变角X射线光电子能谱 (XPS)表面分析技术研究了GaAs光电阴极的 (Cs ,O)激活工艺 .获得了首次导Cs、(Cs ,O)导入以及 (Cs ,O)循环的优化激活条件 .XPS分析给出GaAs(Cs ,O)的最佳激活层厚度为 0 .82nm ,首次导Cs达到峰值光电发射时的Cs覆盖率为 0 .71个单层 .在优化激活条件下 ,可以在国产反射式GaAs上获得 10 2 5 μA/lm的积分灵敏度 .

NEA GaN光电阴极表面模型研究

针对目前NEAGaN光电阴极研究中Cs激活或Cs/O激活后表面状态的形成过程还不清楚的问题,围绕NEAGaN光电阴极的光电发射机理,结合GaN光电阴极激活过程中出现的现象及成功激活的最终效果,给出了GaN光电阴极铯氧激活后的表面模型[GaN(Mg):Cs]:O-Cs。利用该模型可很好地解释单独用Cs激活时约-1.0eV的有效电子亲和势和Cs/O共同激活时-1.2eV的有效电子亲和势的成因,也较好地解释了表面吸附原子的组合形式,即Cs/O激活后激活层的化学结构由Cs2O2和CsO2构成。

NEA光电阴极的性能参数评估

利用自行研制的动态光谱响应测试系统直接实现NEA光电阴极的光谱响应在线测试,并对光谱响应曲线进行曲线拟合,间接实现了电子表面逸出几率、扩散长度、后界面复合速率及积分灵敏度的评估。对(Cs,O)激活的GaAs反射式光电阴极进行了性能参数评估,给出了测试结果。

Multiply Charged Anions,Maximum Charge Acceptance,and Higher Electron Affinities of Molecules,Superatoms,and Clusters

The addition of electrons to form gas-phase multiply charged anions(MCAs)normally requires sophisticated experiments or calculations.In this work,the factors stabilizing the MCAs,the maximum electron uptake of gas-phase molecules,X,and the electronic stability of MCAs X^(Q-),are discussed.The drawbacks encountered when applying computational and/or conceptual density functional theory(DFT)to MCAs are highlighted.We develop and test a different model based on the valence-state concept.As in DFT,the electronic energy,E(N,v_(ex)),is a continuous function of the average electron number,N,and the external potential,v_(ex),of the nuclei.The valence-state-parabola is a second-order polynomial that allows extending E(N,v_(ex))to dianions and higher MCAs.The model expresses the maximum electron acceptance,Q_(max),and the higher electron affinities,A_Q,as simple functions of the firstelectron affinity,A_1,and the ionization energy,I,of the"ancestor"system.Thus,the maximum electron acceptance is Q_(max,calc)=1+12A_1/7(I-A_1).The ground-state parabola model of the conceptual DFT yields approximately half of this value,and it is termed Q_(max,GS)=?+A_1/(I-A_1).A large variety of molecules are evaluated including fullerenes,metal clusters,super-pnictogens,super-halogens(OF_3),super-alkali species(OLi_3),and neutral or charged transition-metal complexes,AB_(m )L_n^(0/+/-).The calculated second electron affinity A_(2,calc)=A_1-(7/12)(I-A_1)is linearly correlated to the literature references A_(2,lit) with a correlation coefficient R=0.998.A_2 or A_3 values are predicted for further 24 species.The appearance sizes,n_(ap)^(3-),of triply charged anionic clusters and fullerenes are calculated in agreement with the literature.

Diamond-based electron emission:Structure,properties and mechanisms

Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a PN junction.The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices.This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics.The electron emission is induced by different physical mechanisms.Recent advancements in electron-emitting devices based on diamond are also summarized.Finally,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.

新型金刚石薄膜场电子发射的特性

介绍了用微波ＣＶＤ法制备的一种新型低阈值电压大电流密度金刚石薄膜场发射冷阴极，阈值电压低于１．０９ Ｖ／μｍ，场发射电流密度高达４１８ ｍＡ／ｃｍ２，这是目前文献中报道的最好结果之一．文中还探讨了金刚石薄膜场电子发射机制．

用电液相外延法制备透射式GaAs光阴极的研究

采用电液相外延法在ｎ型ＧａＡｓ衬底上连续生长Ｇａ１－ｘＡｌｘＡｓ（ｘ＝０．７５）过渡层及ｐ型ＧａＡｓ发射层，测试结果表明，电液相外延法适合于制备透射式ＧａＡｓ光电阴极．

Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.

Influence of cesium on the stability of a GaAs photocathode

The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature. We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current, and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode. We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode. Our results support the double dipolar mode] for the explanation of the negative electron affinity effect.

GaN紫外光阴极材料的高低温两步制备实验研究

GaN紫外光阴极是一种表面具有负电子亲和势(NEA)状态的光电发射材料,具有电子发射效率高、暗发射小、稳定性好等众多优点,是近年来得到迅速发展的一种新型高性能紫外探测材料。采用超高真空原子吸附工艺,对金属有机物化学汽相沉积(MOCVD)外延的p型GaN表面依次进行了高温净化、Cs/O激活、低温净化和Cs/O激活的高低温两步光阴极制备实验。实验结果表明,高温净化后的Cs/O激活可制备出量子效率约为20%的GaN紫外光阴极材料,第二步低温净化后GaN表面仍具有光电发射能力,经过Cs/O激活后可将阴极光电流恢复到接近高温激活结束后的水平,说明GaN阴极材料的制备只需单步高温激活完成。通过比较GaN与GaAs光阴极材料的高低温制备效果差异,对GaN光阴极制备工艺的机理进行了探讨。

反射式非均匀掺杂负电子亲和光电阴极量子效率研究

内建电场对提高阴极量子效率有重要作用。为获得恒定的电场强度,需要用指数掺杂方式对光电阴极激活层进行掺杂。指数掺杂实际上是一种特殊的梯度掺杂,针对这种掺杂方式,建立了指数掺杂和均匀掺杂加权的量子效率公式。实验设计了4种掺杂浓度从1019-1018cm-3掺杂样品,测量样品的光谱响应曲线和量子效率曲线,并分别用均匀掺杂量子效率公式,指数掺杂量子效率公式和新建立的梯度掺杂量子效率公式这三种方式,对量子效率曲线进行了拟合,证明了该量子效率公式具有较高的拟合精度。