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Prompt Electrodeposition of Ni Nanodots on Ni Foam to Construct a High-Performance Water-Splitting Electrode:Efficient, Scalable,and Recyclable 被引量:2
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作者 Hongtao Yu Ting Quan +4 位作者 Shilin Mei Zdravko Kochovski Wei Huang Hong Meng Yan Lu 《Nano-Micro Letters》 SCIE EI CAS CSCD 2019年第3期79-91,共13页
In past decades,Ni-based catalytic materials and electrodes have been intensively explored as low-cost hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)catalysts for water splitting.With increasing de... In past decades,Ni-based catalytic materials and electrodes have been intensively explored as low-cost hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)catalysts for water splitting.With increasing demands for Ni worldwide,simplifying the fabrication process,increasing Ni recycling,and reducing waste are tangible sustainability goals.Here,binder-free,heteroatom-free,and recyclable Ni-based bifunctional catalytic electrodes were fabricated via a one-step quick electrodeposition method.Typically,active Ni nanodot(NiND)clusters are electrodeposited on Ni foam(NF)in Ni(NO3)2 acetonitrile solution.After drying in air,NiO/NiND composites are obtained,leading to a binder-free and heteroatom-free NiO/NiNDs@NF catalytic electrode.The electrode shows high efficiency and long-term stability for catalyzing hydrogen and oxygen evolution reactions at low overpotentials(10ηHER= 119 mV and 50ηOER=360 mV)and can promote water catalysis at 1.70 V@ 10mA cm-2.More importantly,the recovery of raw materials(NF and Ni(NO3)2)is quite easy because of the solubility of NiO/NiNDs composites in acid solution for recycling the electrodes.Additionally,a large-sized(S^70 cm2)NiO/NiNDs@NF catalytic electrode with high durability has also been constructed.This method provides a simple and fast technology to construct high-performance,low-cost,and environmentally friendly Ni-based bifunctional electrocatalytic electrodes for water splitting. 展开更多
关键词 Electrodeposition ni nanodotS BIFUNCTIONAL catalysts Water splitting Large-size
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利用自组装Ni纳米点为掩膜制备GaN纳米柱阵列
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作者 吴玉新 曹玉萍 《微纳电子技术》 CAS 北大核心 2013年第12期765-769,共5页
采用等离子体增强化学气相沉积(PECVD)和电子束蒸发法在Si基GaN模板上先后淀积一层SiO2和Ni薄膜,接着在氮气中快速热退火(RTA)自组装生长Ni纳米点,最后以Ni纳米点为掩膜制备GaN纳米柱阵列,研究其制备条件的影响。扫描电镜(SEM)分析显示... 采用等离子体增强化学气相沉积(PECVD)和电子束蒸发法在Si基GaN模板上先后淀积一层SiO2和Ni薄膜,接着在氮气中快速热退火(RTA)自组装生长Ni纳米点,最后以Ni纳米点为掩膜制备GaN纳米柱阵列,研究其制备条件的影响。扫描电镜(SEM)分析显示,随着Ni层厚度的减小、退火温度的降低和时间的延长,Ni纳米点的平均尺寸减小、密度增大。光致发光谱(PL)研究表明,GaN纳米柱比GaN模板的发光强度提高了约20倍,带边峰发生27 meV蓝移,这归因于GaN纳米柱具有较大的比表面积和张应力的部分弛豫。 展开更多
关键词 ni纳米点 自组装 快速热退火(RTA) GaN纳米柱阵列 GaN模板
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