We have studied the forward I-V characteristics of In-pWSe2Schottky barrier diode with 1000 ? indium thickness in the temperature range 140 – 300 K well within the domain of thermionic emission theory with Gaussian d...We have studied the forward I-V characteristics of In-pWSe2Schottky barrier diode with 1000 ? indium thickness in the temperature range 140 – 300 K well within the domain of thermionic emission theory with Gaussian distribution of barrier height. However we found some anomalies in the low temperature range below 200 K. Hence we have considered a model that incorporates thermionic emission, generation recombination and tunneling components. The low temperature anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes. Various Schottky diode parameters were also extracted and compared with that of 500 ? metal thickness In-pWSe2 diode.展开更多
The Ni/p-InP Schottky diodes（SDs） have been prepared by DC magnetron sputtering deposition. After the diode fabrication, they have been thermally annealed at 700 ℃ for 1 min in N2 atmosphere. Then, the current–vol...The Ni/p-InP Schottky diodes（SDs） have been prepared by DC magnetron sputtering deposition. After the diode fabrication, they have been thermally annealed at 700 ℃ for 1 min in N2 atmosphere. Then, the current–voltage characteristics of the annealed and non-annealed（as-deposited） SDs have been measured in the measurement temperature range of 60–400 K with steps of 20 K under dark conditions. After 700 ℃ annealing,an improvement in the ideality factor value has been observed from 60 to 200 K and the barrier height（BH）value approximately has remained unchanged in the measurement temperature range of 200–400 K. The BH of the annealed diode has decreased obeying the double-Gaussian distribution（GD） of the BHs with decreasing measurement temperature from 200 to 60 K. The BH for the as-deposited diode has decreased with decreasing temperature obeying the single-GD over the whole measurement temperature range. An effective Richardson constant value of54：21 A/cm^2K^2 for the as-deposited SD has been obtained from the modified Richardson plot by the single-GD plot, which is in very close agreement with the value of 60 A/K^2cm^2 for p-type InP. The series resistance value of the annealed SD is lower than that of the non-annealed SD at each temperature and approximately has remained unchanged from 140 to 240 K. Thus, it can be said that an improvement in the diode parameters has been observed due to the thermal annealing at 700 ℃ for 1 min in N_2 atmosphere.展开更多
文摘We have studied the forward I-V characteristics of In-pWSe2Schottky barrier diode with 1000 ? indium thickness in the temperature range 140 – 300 K well within the domain of thermionic emission theory with Gaussian distribution of barrier height. However we found some anomalies in the low temperature range below 200 K. Hence we have considered a model that incorporates thermionic emission, generation recombination and tunneling components. The low temperature anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes. Various Schottky diode parameters were also extracted and compared with that of 500 ? metal thickness In-pWSe2 diode.
文摘The Ni/p-InP Schottky diodes（SDs） have been prepared by DC magnetron sputtering deposition. After the diode fabrication, they have been thermally annealed at 700 ℃ for 1 min in N2 atmosphere. Then, the current–voltage characteristics of the annealed and non-annealed（as-deposited） SDs have been measured in the measurement temperature range of 60–400 K with steps of 20 K under dark conditions. After 700 ℃ annealing,an improvement in the ideality factor value has been observed from 60 to 200 K and the barrier height（BH）value approximately has remained unchanged in the measurement temperature range of 200–400 K. The BH of the annealed diode has decreased obeying the double-Gaussian distribution（GD） of the BHs with decreasing measurement temperature from 200 to 60 K. The BH for the as-deposited diode has decreased with decreasing temperature obeying the single-GD over the whole measurement temperature range. An effective Richardson constant value of54：21 A/cm^2K^2 for the as-deposited SD has been obtained from the modified Richardson plot by the single-GD plot, which is in very close agreement with the value of 60 A/K^2cm^2 for p-type InP. The series resistance value of the annealed SD is lower than that of the non-annealed SD at each temperature and approximately has remained unchanged from 140 to 240 K. Thus, it can be said that an improvement in the diode parameters has been observed due to the thermal annealing at 700 ℃ for 1 min in N_2 atmosphere.
