Nickel oxide(NiO_(x))has been established as a highly efficient and stable holetransporting layer(HTL)in perovskite solar cells(PSCs).However,existing deposition methods for NiO_(x)have been restricted by high-vacuum ...Nickel oxide(NiO_(x))has been established as a highly efficient and stable holetransporting layer(HTL)in perovskite solar cells(PSCs).However,existing deposition methods for NiO_(x)have been restricted by high-vacuum processes and fail to address the energy level mismatch at the NiO_(x)/perovskite interface,which has impeded the development of PSCs.Accordingly,we explored the application of NiO_(x)as a hybrid HTL through a sol-gel process,where a NiO_(x)film was pre-doped with Ag ions,forming a p/p^(+)homojunction in the NiO_(x)-based inverted PSCs.This innovative approach offers two synergistic advantages,including the enlargement of the built-in electric field for facilitating charge separation,optimizing energy level alignment,and charge transfer efficiency at the interface between the perovskite and HTL.Incorporating this hybrid HTL featuring the p/p^(+)homojunction in the inverted PSCs resulted in a high-power conversion efficiency(PCE)of up to 19.25%,significantly narrowing the efficiency gap compared to traditional n-i-p devices.Furthermore,this innovative strategy for the HTL enhanced the environmental stability to 30 days,maintaining 90%of the initial efficiency.展开更多
Potassium-ions batteries(PIBs)are attracting increasing attention as up-and-coming youngster in largescale grid-level energy storage benefiting from its low-cost and high energy density.Nevertheless,enough researches ...Potassium-ions batteries(PIBs)are attracting increasing attention as up-and-coming youngster in largescale grid-level energy storage benefiting from its low-cost and high energy density.Nevertheless,enough researches regarding indispensable cathode materials for PIBs are badly absent.Herein,we synthesize K-deficient layered manganese-based oxides(P2-K_(0.21)MnO_(2) and P3-K_(0.23)MnO_(2))and investigate them as cathode of PIBs for the first time.As the newcomer of potassium-containing layered manganese-based oxides(K_(x)MnO_(2))group,P2-K_(0.21)MnO_(2) delivers high discharge capacity of 99.3 mAh g^(-1) and P3-K_(0.23)MnO_(2) exhibits remarkable capacity retention rate of 75.5%.Besides,in-situ XRD and ex-situ XRD measurements reveal the reversible phase transition of P2-K_(0.21)MnO_(2) and P3-K_(0.23)MnO_(2) with the potassium-ions extraction and reinsertion,respectively.This work contributes to a better understanding for the potassium storage in K-deficient layered K_(x)MnO_(2)(x≤0.23),possessing an important basic scientific significance for the exploitation and application of layered K_(x)MnO_(2) in PIBs.展开更多
The structural features and three-dimensional nature of the charge density wave （CDW） state of the layered chalcogenide 1T-TaSe2-xTex （0≤x≤2.0） are characterized by Cs-corrected transmission electron microscopy ...The structural features and three-dimensional nature of the charge density wave （CDW） state of the layered chalcogenide 1T-TaSe2-xTex （0≤x≤2.0） are characterized by Cs-corrected transmission electron microscopy measurements. Notable changes of both average structure and the CDW state arising from Te substitution for Se are clearly demonstrated in samples with x〉0.3. The commensurate CDW state characterized by the known star-of-David clustering in the 1T-TaSe2 crystal becomes visibly unstable with Te substitution and vanishes when x=0.3. The 1T-TaSe2-xTex （0.3≤x≤1.3） samples generally adopt a remarkable incommensurate CDW state with monoclinic distortion, which could be fundamentally in correlation with the strong qq-dependent electron-phonon coupling-induced period-lattice-distortion as identified in TaTe22. Systematic analysis demonstrates that the occurrence of superconductivity is related to the suppression of the commensurate CDW phase and the presence of discommensuration is an evident structural feature observed in the superconducting samples.展开更多
Using melting layer(ML)and non-melting layer(NML)data observed with the X-band dual linear polarization Doppler weather radar(X-POL)in Shunyi,Beijing,the reflectivity(ZH),differential reflectivity(ZDR),and correlation...Using melting layer(ML)and non-melting layer(NML)data observed with the X-band dual linear polarization Doppler weather radar(X-POL)in Shunyi,Beijing,the reflectivity(ZH),differential reflectivity(ZDR),and correlation coefficient(CC)in the ML and NML are obtained in several stable precipitation processes.The prior probability density distributions(PDDs)of the ZH,ZDR and CC are calculated first,and then the probabilities of ZH,ZDR and CC at each radar gate are determined(PBB in the ML and PNB in the NML)by the Bayesian method.When PBB>PNB the gate belongs to the ML,and when PBB<PNB the gate belongs to the NML.The ML identification results with the Bayesian method are contrasUsing melting layer(ML)and non-melting layer(NML)data observed with the X-band dual linear polarization Doppler weather radar(X-POL)in Shunyi,Beijing,the reflectivity(ZH),differential reflectivity(ZDR),and correlation coefficient(CC)in the ML and NML are obtained in several stable precipitation processes.The prior probability density distributions(PDDs)of the ZH,ZDR and CC are calculated first,and then the probabilities of ZH,ZDR and CC at each radar gate are determined(PBB in the ML and PNB in the NML)by the Bayesian method.When PBB>PNB the gate belongs to the ML,and when PBB<PNB the gate belongs to the NML.The ML identification results with the Bayesian method are contrasted under the conditions of the independent PDDs and joint PDDs of the ZH,ZDR and CC.The results suggest that MLs can be identified effectively,although there are slight differences between the two methods.Because the values of the polarization parameters are similar in light rain and dry snow,it is difficult for the polarization radar to distinguish them.After using the Bayesian method to identify the ML,light rain and dry snow can be effectively separated with the X-POL observed data.ted under the conditions of the independent PDDs and joint PDDs of the ZH,ZDR and CC.The results suggest that MLs can be identified effectively,although there are slight differences between the two methods.Because the values of the polarization parameters are similar in light rain and dry snow,it is difficult for the polarization radar to distinguish them.After using the Bayesian method to identify the ML,light rain and dry snow can be effectively separated with the X-POL observed data.展开更多
Based on the principle of synthesis, a new method was put forward to dispose Congo Red anion-containing dyestuff from wastewater and its feasibility was also examined. The principle of the method is described as follo...Based on the principle of synthesis, a new method was put forward to dispose Congo Red anion-containing dyestuff from wastewater and its feasibility was also examined. The principle of the method is described as follows: Mg2+ and Al3+ are hydrolyzed to form Mg/Al-LDH by adding Mg2+, Al3+ and NaOH in wastewater containing anion dyestuff, which is selectively intercalated with the interlayer of LDH in order to balance positive structural charge. While Mg2+ and Al3+ are co-precipitated to form LDH, the anion dyestuff in wastewater will be removed by LDH synthesized in-situ, as is confirmed by X-ray diffraction analysis of settlings and chemical analysis of aqueous samples. In this work, we studied the influence of Mg/Al mole ratio, pH value, time and temperature of reaction on the removal of anion dyestuff and the use of Mg and Al. The experimental results showed the maximum removal efficiency of anion dyestuff could be attained when pH value was 9.0, and Mg/Al mol ratio was 2∶1, reaction duration was 2 hours, and the effect of temperature was not remarkable, and the removal efficiency could reach 100%. Meanwhile, the Mg and Al added could be made good use of. This technology has the advantage of extraordinary efficiency of wastewater disposal.展开更多
We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the ...We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the device features a high product orris. #n. The AIGaN channel HEMTs presented show improved performance with respect to the conventional AIGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω.mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/ram, and reverse gate leakage current reduced from 1.85 × 10-3 to 2.15 × 10-5 mA/mm at VOD = -20 V.展开更多
Ternary In-rich AlxIn1-x N films were successfully grown on Si （111） and （0001） sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich AlxIn1-x N layer after AlN buffer. X-ray diffract...Ternary In-rich AlxIn1-x N films were successfully grown on Si （111） and （0001） sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich AlxIn1-x N layer after AlN buffer. X-ray diffraction （XRD） patterns of the films indicate highly c axis-oriented wurtzite structure and the indium content of about 0.76 has been evaluated according to the Vegard＇s law. An Al-rich AlxIn1-xN transition layer was formed between the ultimate In-rich AlxIn1-x N film and the AlN buffer, which served as a further buffer to alleviate mismatch. X-ray photoelectron spectroscopy （XPS） depth profiling analyses confirm the alternative of indium and aluminum composition and the unavoidable oxygen impurities from surface to bulk. Owing to high indium content, obvious E2u and InN-like Al （LO） phonon model accompanying with slight A1N-like A1 （LO） phonon model are observed. Hall effect measurements demonstrate n-type electrical conductivity in these alloys with carrier concentrations n=1019 cm-3. The strain in In-rich AlxIn1-x N films can be significantly reduced by introducing an Al-rich interlayer, facilitating the improvement of film quality for diverse device applications.展开更多
基金funded in part by the National Natural Science Foundation of China(62204210)the Natural Science Foundation of Jiangsu Province(BK20220284)+6 种基金the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province(22KJB510013)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China Program(19KJB510059)the Suzhou Science and Technology Development Planning Project:Key Industrial Technology Innovation(SYG201924)University Research Development Fund(RDF-17-01-13)the Key Program Special Fund in XJTLU(KSF-T-03,KSFA-07)partially supported by the XJTLU AI University Research CentreJiangsu(Provincial)Data Science and Cognitive Computational Engineering Research Centre at XJTLU
文摘Nickel oxide(NiO_(x))has been established as a highly efficient and stable holetransporting layer(HTL)in perovskite solar cells(PSCs).However,existing deposition methods for NiO_(x)have been restricted by high-vacuum processes and fail to address the energy level mismatch at the NiO_(x)/perovskite interface,which has impeded the development of PSCs.Accordingly,we explored the application of NiO_(x)as a hybrid HTL through a sol-gel process,where a NiO_(x)film was pre-doped with Ag ions,forming a p/p^(+)homojunction in the NiO_(x)-based inverted PSCs.This innovative approach offers two synergistic advantages,including the enlargement of the built-in electric field for facilitating charge separation,optimizing energy level alignment,and charge transfer efficiency at the interface between the perovskite and HTL.Incorporating this hybrid HTL featuring the p/p^(+)homojunction in the inverted PSCs resulted in a high-power conversion efficiency(PCE)of up to 19.25%,significantly narrowing the efficiency gap compared to traditional n-i-p devices.Furthermore,this innovative strategy for the HTL enhanced the environmental stability to 30 days,maintaining 90%of the initial efficiency.
基金support from the Key Project of Guangdong Province Nature Science Foundation (No. 2017B030311013)the Scientific and Technological Plan of Guangdong Province, Guangzhou and Qingyuan City, China (Nos. 2019B090905005, 2019B090911004, 2017B020227009, 2019DZX008, 2019A004)+2 种基金the financial support from the National Key R&D Program of China (2018YFB1502600)the National Natural Science Foundation of China (No. 51922042 and 51872098)the Sino-Singapore International Joint Research Institute (SSIJRI), Guangzhou 510700, China.
文摘Potassium-ions batteries(PIBs)are attracting increasing attention as up-and-coming youngster in largescale grid-level energy storage benefiting from its low-cost and high energy density.Nevertheless,enough researches regarding indispensable cathode materials for PIBs are badly absent.Herein,we synthesize K-deficient layered manganese-based oxides(P2-K_(0.21)MnO_(2) and P3-K_(0.23)MnO_(2))and investigate them as cathode of PIBs for the first time.As the newcomer of potassium-containing layered manganese-based oxides(K_(x)MnO_(2))group,P2-K_(0.21)MnO_(2) delivers high discharge capacity of 99.3 mAh g^(-1) and P3-K_(0.23)MnO_(2) exhibits remarkable capacity retention rate of 75.5%.Besides,in-situ XRD and ex-situ XRD measurements reveal the reversible phase transition of P2-K_(0.21)MnO_(2) and P3-K_(0.23)MnO_(2) with the potassium-ions extraction and reinsertion,respectively.This work contributes to a better understanding for the potassium storage in K-deficient layered K_(x)MnO_(2)(x≤0.23),possessing an important basic scientific significance for the exploitation and application of layered K_(x)MnO_(2) in PIBs.
基金Supported by the National Basic Research Program of China under Grant Nos 2015CB921300 and 2012CB821404the National Key Research and Development Program of China under Grant Nos 2016YFA0300300 and 2016YFA0300404+1 种基金the National Natural Science Foundation of China under Grant Nos 11474323,11604372,11274368,91221102,11190022,11674326 and 91422303the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB07020000
文摘The structural features and three-dimensional nature of the charge density wave （CDW） state of the layered chalcogenide 1T-TaSe2-xTex （0≤x≤2.0） are characterized by Cs-corrected transmission electron microscopy measurements. Notable changes of both average structure and the CDW state arising from Te substitution for Se are clearly demonstrated in samples with x〉0.3. The commensurate CDW state characterized by the known star-of-David clustering in the 1T-TaSe2 crystal becomes visibly unstable with Te substitution and vanishes when x=0.3. The 1T-TaSe2-xTex （0.3≤x≤1.3） samples generally adopt a remarkable incommensurate CDW state with monoclinic distortion, which could be fundamentally in correlation with the strong qq-dependent electron-phonon coupling-induced period-lattice-distortion as identified in TaTe22. Systematic analysis demonstrates that the occurrence of superconductivity is related to the suppression of the commensurate CDW phase and the presence of discommensuration is an evident structural feature observed in the superconducting samples.
基金supported by a Beijing Municipal Science and Technology Project (Grant No. Z171100004417008)the National Key R&D Program of China (Grant No. 2018YFF0300102)the National Natural Science Foundation of China (Grant Nos. 41375038 and 41575050)
文摘Using melting layer(ML)and non-melting layer(NML)data observed with the X-band dual linear polarization Doppler weather radar(X-POL)in Shunyi,Beijing,the reflectivity(ZH),differential reflectivity(ZDR),and correlation coefficient(CC)in the ML and NML are obtained in several stable precipitation processes.The prior probability density distributions(PDDs)of the ZH,ZDR and CC are calculated first,and then the probabilities of ZH,ZDR and CC at each radar gate are determined(PBB in the ML and PNB in the NML)by the Bayesian method.When PBB>PNB the gate belongs to the ML,and when PBB<PNB the gate belongs to the NML.The ML identification results with the Bayesian method are contrasUsing melting layer(ML)and non-melting layer(NML)data observed with the X-band dual linear polarization Doppler weather radar(X-POL)in Shunyi,Beijing,the reflectivity(ZH),differential reflectivity(ZDR),and correlation coefficient(CC)in the ML and NML are obtained in several stable precipitation processes.The prior probability density distributions(PDDs)of the ZH,ZDR and CC are calculated first,and then the probabilities of ZH,ZDR and CC at each radar gate are determined(PBB in the ML and PNB in the NML)by the Bayesian method.When PBB>PNB the gate belongs to the ML,and when PBB<PNB the gate belongs to the NML.The ML identification results with the Bayesian method are contrasted under the conditions of the independent PDDs and joint PDDs of the ZH,ZDR and CC.The results suggest that MLs can be identified effectively,although there are slight differences between the two methods.Because the values of the polarization parameters are similar in light rain and dry snow,it is difficult for the polarization radar to distinguish them.After using the Bayesian method to identify the ML,light rain and dry snow can be effectively separated with the X-POL observed data.ted under the conditions of the independent PDDs and joint PDDs of the ZH,ZDR and CC.The results suggest that MLs can be identified effectively,although there are slight differences between the two methods.Because the values of the polarization parameters are similar in light rain and dry snow,it is difficult for the polarization radar to distinguish them.After using the Bayesian method to identify the ML,light rain and dry snow can be effectively separated with the X-POL observed data.
基金Foundation item: Project supported by the National Natural Science Foundation of China (40472026).
文摘Based on the principle of synthesis, a new method was put forward to dispose Congo Red anion-containing dyestuff from wastewater and its feasibility was also examined. The principle of the method is described as follows: Mg2+ and Al3+ are hydrolyzed to form Mg/Al-LDH by adding Mg2+, Al3+ and NaOH in wastewater containing anion dyestuff, which is selectively intercalated with the interlayer of LDH in order to balance positive structural charge. While Mg2+ and Al3+ are co-precipitated to form LDH, the anion dyestuff in wastewater will be removed by LDH synthesized in-situ, as is confirmed by X-ray diffraction analysis of settlings and chemical analysis of aqueous samples. In this work, we studied the influence of Mg/Al mole ratio, pH value, time and temperature of reaction on the removal of anion dyestuff and the use of Mg and Al. The experimental results showed the maximum removal efficiency of anion dyestuff could be attained when pH value was 9.0, and Mg/Al mol ratio was 2∶1, reaction duration was 2 hours, and the effect of temperature was not remarkable, and the removal efficiency could reach 100%. Meanwhile, the Mg and Al added could be made good use of. This technology has the advantage of extraordinary efficiency of wastewater disposal.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002National Natural Science Foundation of China under Grant Nos 11435010 and 61474086
文摘We report an AlGaN channel high electron mobility transistor （HEMT） on a sapphire substrate with a 1000-nm A1xGa1-xN （x = 0-0.18）/GaN composite buffer layer, With a significant improvement of crystal quality, the device features a high product orris. #n. The AIGaN channel HEMTs presented show improved performance with respect to the conventional AIGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω.mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/ram, and reverse gate leakage current reduced from 1.85 × 10-3 to 2.15 × 10-5 mA/mm at VOD = -20 V.
基金Supported by the 863 High-Technology Research and Development Program of China(No.2009AA03Z442)the National Natural Science Foundation of China(No.61077074)the Science and Technology Department of Jilin Province(No.20090422)
文摘Ternary In-rich AlxIn1-x N films were successfully grown on Si （111） and （0001） sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich AlxIn1-x N layer after AlN buffer. X-ray diffraction （XRD） patterns of the films indicate highly c axis-oriented wurtzite structure and the indium content of about 0.76 has been evaluated according to the Vegard＇s law. An Al-rich AlxIn1-xN transition layer was formed between the ultimate In-rich AlxIn1-x N film and the AlN buffer, which served as a further buffer to alleviate mismatch. X-ray photoelectron spectroscopy （XPS） depth profiling analyses confirm the alternative of indium and aluminum composition and the unavoidable oxygen impurities from surface to bulk. Owing to high indium content, obvious E2u and InN-like Al （LO） phonon model accompanying with slight A1N-like A1 （LO） phonon model are observed. Hall effect measurements demonstrate n-type electrical conductivity in these alloys with carrier concentrations n=1019 cm-3. The strain in In-rich AlxIn1-x N films can be significantly reduced by introducing an Al-rich interlayer, facilitating the improvement of film quality for diverse device applications.
