The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further...The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.展开更多
Ethane chemical looping oxidative dehydrogenation(CL-ODH)to ethylene is a new technology for ethylene preparation.Fe_(2)O_(3)/MgO oxygen carrier was prepared using the co-precipitation method.The influence of added Ni...Ethane chemical looping oxidative dehydrogenation(CL-ODH)to ethylene is a new technology for ethylene preparation.Fe_(2)O_(3)/MgO oxygen carrier was prepared using the co-precipitation method.The influence of added NiO and its different loadings on Fe_(2)O_(3)/MgO were investigated.Then,a series of oxygen carriers were applied in the CL-ODH of the ethane cycle system.Brunauer-Emmett-Teller(BET),X-ray diffractometry(XRD),X-ray photoelection spectroscopy(XPS),and H2-temperature programmed reduction(TPR)were used to characterize the physicochemical properties of these oxygen carriers.It was confirmed that an interaction between NiO and Fe_(2)O_(3) occurred based on the XPS and H2-TPR results.Based on the CL-ODH activity performance tests conducted in a fixed-bed reactor,it was revealed that ethylene selectivity was significantly improved after NiO addition.Fe_(2)O_(3)-10%NiO/MgO showed the best activity performance with 93%ethane conversion and 50%ethylene selectivity at a reaction temperature of 650℃,atmospheric pressure,and space velocity of 7500 mL/(g·h).展开更多
Beta gallium oxide(β-Ga_(2)O_(3)) has attracted significant attention for applications in power electronics due to its ultrawide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties ...Beta gallium oxide(β-Ga_(2)O_(3)) has attracted significant attention for applications in power electronics due to its ultrawide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga's figures of merit(BFOM) of more than 3000. Though β-Ga_(2)O_(3) possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga_(2)O_(3)-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide(NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga_(2)O_(3) heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga_(2)O_(3) heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga_(2)O_(3) heterojunctions are discussed. Various device architectures, including the NiO/β-Ga_(2)O_(3) heterojunction pn diodes(HJDs), junction barrier Schottky(JBS) diodes, and junction field effect transistors(JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga_(2)O_(3) heterojunction, are described.展开更多
Charging P2-Na_(2/3)Ni_(1/3)Mn_(2/3)O_(2)to 4.5 V for higher capacity is enticing.However,it leads to severe capacity fading,ascribing to the lattice oxygen evolution and the P2-O2 phase transformation.Here,the Mg Fe_...Charging P2-Na_(2/3)Ni_(1/3)Mn_(2/3)O_(2)to 4.5 V for higher capacity is enticing.However,it leads to severe capacity fading,ascribing to the lattice oxygen evolution and the P2-O2 phase transformation.Here,the Mg Fe_(2)O_(4) coating and Mg,Fe co-doping were constructed simultaneously by Mg,Fe surface treatment to suppress lattice oxygen evolution and P2-O2 phase transformation of P2-Na_(2/3)Ni_(1/3)Mn_(2/3)O_(2)at deep charging.Through ex-situ X-ray diffraction(XRD)tests,we found that the Mg,Fe bulk co-doping could reduce the repulsion between transition metals and Na+/vacancies ordering,thus inhibiting the P2-O2 phase transition and significantly reducing the irreversible volume change of the material.Meanwhile,the internal electric field formed by the dielectric polarization of Mg Fe_(2)O_(4) effectively inhibits the outward migration of oxidized O^(a-)(a<2),thereby suppressing the lattice oxygen evolution at deep charging,confirmed by in situ Raman and ex situ XPS techniques.P2-Na NM@MF-3 shows enhanced high-voltage cycling performance with capacity retentions of 84.8% and 81.3%at 0.1 and 1 C after cycles.This work sheds light on regulating the surface chemistry for Na-layered oxide materials to enhance the high-voltage performance of Na-ion batteries.展开更多
A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s...A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s)).Two different degradation mechanisms of the devices under negative bias stress(NBS)are identified.At low V_(G,s)for a short t_(s),NiO bulk traps trapping/de-trapping elec-trons are responsible for decrease/recovery of the leakage current,respectively.At higher V_(G,s)or long t_(s),the device transfer char-acteristic curves and threshold voltage(V_(TH))are almost permanently negatively shifted.This is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region(SCR)across the heterojunction inter-face,resulting in a narrowing SCR.This provides an important theoretical guide to study the reliability of NiO/β-Ga_(2)O_(3) hetero-junction devices in power electronic applications.展开更多
The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni onβ-Ga_(2)O_(3)to form NiO/β-Ga_(2)O_(3)p-n heterojunction diodes(HJDs).The NiO/β-Ga_(2)O_(3)HJDs exhibit excellent electrostatic properties,with a h...The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni onβ-Ga_(2)O_(3)to form NiO/β-Ga_(2)O_(3)p-n heterojunction diodes(HJDs).The NiO/β-Ga_(2)O_(3)HJDs exhibit excellent electrostatic properties,with a high breakdown voltage of 465 V,a specific on-resistance(Ron,sp)of 3.39 mΩ·cm^(2),and a turn-on voltage(V on)of 1.85 V,yielding a static Baliga's figure of merit(FOM)of 256 MW/cm^(2).Also,the HJDs have a low turn-on voltage,which reduces conduction loss dramatically,and a rectification ratio of up to 108.Meanwhile,the HJDs'reverse leakage current is essentially unaffected at temperatures below 170?C,and their leakage level may be controlled below 10^(-10)A.This indicates that p-NiO/β-Ga_(2)O_(3)HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performanceβ-Ga_(2)O_(3)power devices.展开更多
The practical application of Lithium-Sulfur batteries largely depends on highly efficient utilization and conversion of sulfur under the realistic condition of high-sulfur content and low electrolyte/sulfur ratio.Rati...The practical application of Lithium-Sulfur batteries largely depends on highly efficient utilization and conversion of sulfur under the realistic condition of high-sulfur content and low electrolyte/sulfur ratio.Rational design of heterostructure electrocatalysts with abundant active sites and strong interfacial electronic interactions is a promising but still challenging strategy for preventing shuttling of polysulfides in lithium-sulfur batteries.Herein,ultrathin nonlayered NiO/Ni_(3)S_(2)heterostructure nanosheets are developed through topochemical transformation of layered Ni(OH)_(2)templates to improve the utilization of sulfur and facilitate stable cycling of batteries.As a multifunction catalyst,NiO/Ni_(3)S_(2)not only enhances the adsorption of polysulfides and shorten the transport path of Li ions and electrons but also promotes the Li_(2)S formation and transformation,which are verified by both in-situ Raman spectroscopy and electrochemical investigations.Thus,the cell with NiO/Ni_(3)S_(2)as electrocatalyst delivers an area capacity of 4.8 mAh cm^(-2)under the high sulfur loading(6 mg cm^(-2))and low electrolyte/sulfur ratio(4.3 pL mg^(-1)).The strategy can be extended to 2D Ni foil,demonstrating its prospects in the construction of electrodes with high gravimetric/volumetric energy densities.The designed electrocatalyst of ultrathin nonlayered heterostructure will shed light on achieving high energy density lithium-sulfur batteries.展开更多
以氢氧化铝干胶和六水合硝酸镍为原料,采用湿混捏法制备不同NiO含量的NiO/Al_(2)O_(3)催化剂,利用N_(2)吸附-脱附、XRD、NH_(3)-TPD、TPR和Py-IR等方法对所制备催化剂进行表征,以溴指数为4300 mg(100 g Br)的重整生成油为评价原料对所...以氢氧化铝干胶和六水合硝酸镍为原料,采用湿混捏法制备不同NiO含量的NiO/Al_(2)O_(3)催化剂,利用N_(2)吸附-脱附、XRD、NH_(3)-TPD、TPR和Py-IR等方法对所制备催化剂进行表征,以溴指数为4300 mg(100 g Br)的重整生成油为评价原料对所制备催化剂进行选择加氢脱烯烃活性评价。实验结果表明,在NiO含量30%~50%(w)的范围内,随着NiO含量的增加,NiO/Al_(2)O_(3)催化剂的比表面积和孔体积逐渐减小,平均孔径增大,总酸量增加,NiO的粒径逐渐增大;NiO/Al_(2)O_(3)催化剂只有L酸,没有B酸,NiO含量为30%(w)时,NiO晶粒较小,分散相对均匀,芳烃加氢率最高,烯烃选择加氢活性较低;NiO含量大于40%(w)时,NiO晶粒逐渐变大,出现镍铝尖晶石晶相,芳烃加氢活性降低,烯烃加氢选择性增加。展开更多
As a noble metal substitute,two-dimensional(2D)hierarchical nano-frame structures have attracted great interest as candidate catalysts due to their remarkable advantages-high intrinsic activity,high electron mobility,...As a noble metal substitute,two-dimensional(2D)hierarchical nano-frame structures have attracted great interest as candidate catalysts due to their remarkable advantages-high intrinsic activity,high electron mobility,and straightforward surface functionalization.Therefore,they may replace Pt-based catalysts in oxygen reduction reaction(ORR)applications.Herein,a simple method is developed to design hierarchical nano-frame structures assembled via 2D NiO and N-doped graphene(NG)nanosheets.This procedure can yield nanostructures that satisfy the criteria correlated with improved electrocatalytic performance,such as large surface area,numerous undercoordinated atoms,and high defect densities.Further,porous NG nanosheet architectures,featuring NiO nanosheets densely coordinated with accessible holey Fe_(2)O_(3) moieties,can enhance mesoporosity and balance hydrophilicity.Such improvements can facilitate charge transport and expose formerly inaccessible reaction sites,maximizing active site density utilization.Density functional theory(DFT)calculations reveal favored O_(2) adsorption and dissociation on Fe_(2)O_(3) hybrid structures when supported by 2D NiO and NG nanomaterials,given 2D materials donated charge to Fe_(2)O_(3) active sites.Our systematic studies reveal that synergistic contributions are responsible for enriching the catalytic activity of Fe_(2)O_(3)@NiO/NG in alkaline media-encompassing internal voids and pores,unique hierarchical support structures,and concentrated N-dopant and bimetallic atomic interactions.Ultimately,this work expands the toolbox for designing and synthesizing highly efficient 2D/2D shelled functional nanomaterials with transition metals,endeavoring to benefit energy conversion and related ORR applications.展开更多
基金supported by BUPT Excellent Ph.D. Students Foundation (CX2023301)in part by the National Natural Science Foundation of China (62204019)
文摘The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.
文摘Ethane chemical looping oxidative dehydrogenation(CL-ODH)to ethylene is a new technology for ethylene preparation.Fe_(2)O_(3)/MgO oxygen carrier was prepared using the co-precipitation method.The influence of added NiO and its different loadings on Fe_(2)O_(3)/MgO were investigated.Then,a series of oxygen carriers were applied in the CL-ODH of the ethane cycle system.Brunauer-Emmett-Teller(BET),X-ray diffractometry(XRD),X-ray photoelection spectroscopy(XPS),and H2-temperature programmed reduction(TPR)were used to characterize the physicochemical properties of these oxygen carriers.It was confirmed that an interaction between NiO and Fe_(2)O_(3) occurred based on the XPS and H2-TPR results.Based on the CL-ODH activity performance tests conducted in a fixed-bed reactor,it was revealed that ethylene selectivity was significantly improved after NiO addition.Fe_(2)O_(3)-10%NiO/MgO showed the best activity performance with 93%ethane conversion and 50%ethylene selectivity at a reaction temperature of 650℃,atmospheric pressure,and space velocity of 7500 mL/(g·h).
基金supported by the Guangdong Basic and Applied Basic Research Foundation under Grant No. 2022A1515012163。
文摘Beta gallium oxide(β-Ga_(2)O_(3)) has attracted significant attention for applications in power electronics due to its ultrawide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga's figures of merit(BFOM) of more than 3000. Though β-Ga_(2)O_(3) possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga_(2)O_(3)-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide(NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga_(2)O_(3) heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga_(2)O_(3) heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga_(2)O_(3) heterojunctions are discussed. Various device architectures, including the NiO/β-Ga_(2)O_(3) heterojunction pn diodes(HJDs), junction barrier Schottky(JBS) diodes, and junction field effect transistors(JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga_(2)O_(3) heterojunction, are described.
基金supported by the Special Project for the Central Government to Guide Local Technological Development (GUIKE ZY20198008)the Guangxi Technology Base and talent Subject (GUIKE AD20238012,AD20297086)+5 种基金the Natural Science Foundation of Guangxi Province (2021GXNSFDA075012)the National Natural Science Foundation of China (51902108,52104298,22169004)the National Natural Science Foundation of China (U20A20249)the Regional Innovation and Development Joint Fundthe Guangxi Innovation Driven Development Subject (GUIKE AA19182020,19254004)the Special Fund for Guangxi Distinguished Expert。
文摘Charging P2-Na_(2/3)Ni_(1/3)Mn_(2/3)O_(2)to 4.5 V for higher capacity is enticing.However,it leads to severe capacity fading,ascribing to the lattice oxygen evolution and the P2-O2 phase transformation.Here,the Mg Fe_(2)O_(4) coating and Mg,Fe co-doping were constructed simultaneously by Mg,Fe surface treatment to suppress lattice oxygen evolution and P2-O2 phase transformation of P2-Na_(2/3)Ni_(1/3)Mn_(2/3)O_(2)at deep charging.Through ex-situ X-ray diffraction(XRD)tests,we found that the Mg,Fe bulk co-doping could reduce the repulsion between transition metals and Na+/vacancies ordering,thus inhibiting the P2-O2 phase transition and significantly reducing the irreversible volume change of the material.Meanwhile,the internal electric field formed by the dielectric polarization of Mg Fe_(2)O_(4) effectively inhibits the outward migration of oxidized O^(a-)(a<2),thereby suppressing the lattice oxygen evolution at deep charging,confirmed by in situ Raman and ex situ XPS techniques.P2-Na NM@MF-3 shows enhanced high-voltage cycling performance with capacity retentions of 84.8% and 81.3%at 0.1 and 1 C after cycles.This work sheds light on regulating the surface chemistry for Na-layered oxide materials to enhance the high-voltage performance of Na-ion batteries.
基金supported by the Fundamental Strengthening Program Key Basic Research Project(Grant No.2021-173ZD-057).
文摘A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s)).Two different degradation mechanisms of the devices under negative bias stress(NBS)are identified.At low V_(G,s)for a short t_(s),NiO bulk traps trapping/de-trapping elec-trons are responsible for decrease/recovery of the leakage current,respectively.At higher V_(G,s)or long t_(s),the device transfer char-acteristic curves and threshold voltage(V_(TH))are almost permanently negatively shifted.This is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region(SCR)across the heterojunction inter-face,resulting in a narrowing SCR.This provides an important theoretical guide to study the reliability of NiO/β-Ga_(2)O_(3) hetero-junction devices in power electronic applications.
基金the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2019jszx-zdztzxX0005)the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2020jscx-gksbX0011)+1 种基金the Science and Technology Research Program of Chongqing Municipal Education Commission(KJQN202100614)the Natural Science Foundation of Chongqing(cstc2021jcyj-bshX0146)。
文摘The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni onβ-Ga_(2)O_(3)to form NiO/β-Ga_(2)O_(3)p-n heterojunction diodes(HJDs).The NiO/β-Ga_(2)O_(3)HJDs exhibit excellent electrostatic properties,with a high breakdown voltage of 465 V,a specific on-resistance(Ron,sp)of 3.39 mΩ·cm^(2),and a turn-on voltage(V on)of 1.85 V,yielding a static Baliga's figure of merit(FOM)of 256 MW/cm^(2).Also,the HJDs have a low turn-on voltage,which reduces conduction loss dramatically,and a rectification ratio of up to 108.Meanwhile,the HJDs'reverse leakage current is essentially unaffected at temperatures below 170?C,and their leakage level may be controlled below 10^(-10)A.This indicates that p-NiO/β-Ga_(2)O_(3)HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performanceβ-Ga_(2)O_(3)power devices.
基金supported by the National Natural Science Foundation of China(Grant nos.62090013,61974043,and 91833303)the National Key R&D Program of China(Grant no.2019YFB2203403)+1 种基金the Projects of Science and Technology Commission of Shanghai Municipality(Grant nos.21JC1402100 and 19511120100)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning.
文摘The practical application of Lithium-Sulfur batteries largely depends on highly efficient utilization and conversion of sulfur under the realistic condition of high-sulfur content and low electrolyte/sulfur ratio.Rational design of heterostructure electrocatalysts with abundant active sites and strong interfacial electronic interactions is a promising but still challenging strategy for preventing shuttling of polysulfides in lithium-sulfur batteries.Herein,ultrathin nonlayered NiO/Ni_(3)S_(2)heterostructure nanosheets are developed through topochemical transformation of layered Ni(OH)_(2)templates to improve the utilization of sulfur and facilitate stable cycling of batteries.As a multifunction catalyst,NiO/Ni_(3)S_(2)not only enhances the adsorption of polysulfides and shorten the transport path of Li ions and electrons but also promotes the Li_(2)S formation and transformation,which are verified by both in-situ Raman spectroscopy and electrochemical investigations.Thus,the cell with NiO/Ni_(3)S_(2)as electrocatalyst delivers an area capacity of 4.8 mAh cm^(-2)under the high sulfur loading(6 mg cm^(-2))and low electrolyte/sulfur ratio(4.3 pL mg^(-1)).The strategy can be extended to 2D Ni foil,demonstrating its prospects in the construction of electrodes with high gravimetric/volumetric energy densities.The designed electrocatalyst of ultrathin nonlayered heterostructure will shed light on achieving high energy density lithium-sulfur batteries.
文摘以氢氧化铝干胶和六水合硝酸镍为原料,采用湿混捏法制备不同NiO含量的NiO/Al_(2)O_(3)催化剂,利用N_(2)吸附-脱附、XRD、NH_(3)-TPD、TPR和Py-IR等方法对所制备催化剂进行表征,以溴指数为4300 mg(100 g Br)的重整生成油为评价原料对所制备催化剂进行选择加氢脱烯烃活性评价。实验结果表明,在NiO含量30%~50%(w)的范围内,随着NiO含量的增加,NiO/Al_(2)O_(3)催化剂的比表面积和孔体积逐渐减小,平均孔径增大,总酸量增加,NiO的粒径逐渐增大;NiO/Al_(2)O_(3)催化剂只有L酸,没有B酸,NiO含量为30%(w)时,NiO晶粒较小,分散相对均匀,芳烃加氢率最高,烯烃选择加氢活性较低;NiO含量大于40%(w)时,NiO晶粒逐渐变大,出现镍铝尖晶石晶相,芳烃加氢活性降低,烯烃加氢选择性增加。
基金supported by the National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(MSIT)(RS2023-00235596)and ERC Center(2022R1A5A1033719)。
文摘As a noble metal substitute,two-dimensional(2D)hierarchical nano-frame structures have attracted great interest as candidate catalysts due to their remarkable advantages-high intrinsic activity,high electron mobility,and straightforward surface functionalization.Therefore,they may replace Pt-based catalysts in oxygen reduction reaction(ORR)applications.Herein,a simple method is developed to design hierarchical nano-frame structures assembled via 2D NiO and N-doped graphene(NG)nanosheets.This procedure can yield nanostructures that satisfy the criteria correlated with improved electrocatalytic performance,such as large surface area,numerous undercoordinated atoms,and high defect densities.Further,porous NG nanosheet architectures,featuring NiO nanosheets densely coordinated with accessible holey Fe_(2)O_(3) moieties,can enhance mesoporosity and balance hydrophilicity.Such improvements can facilitate charge transport and expose formerly inaccessible reaction sites,maximizing active site density utilization.Density functional theory(DFT)calculations reveal favored O_(2) adsorption and dissociation on Fe_(2)O_(3) hybrid structures when supported by 2D NiO and NG nanomaterials,given 2D materials donated charge to Fe_(2)O_(3) active sites.Our systematic studies reveal that synergistic contributions are responsible for enriching the catalytic activity of Fe_(2)O_(3)@NiO/NG in alkaline media-encompassing internal voids and pores,unique hierarchical support structures,and concentrated N-dopant and bimetallic atomic interactions.Ultimately,this work expands the toolbox for designing and synthesizing highly efficient 2D/2D shelled functional nanomaterials with transition metals,endeavoring to benefit energy conversion and related ORR applications.
