Ge complementary tunneling field-effect transistors（TFETs） are fabricated with the NiGe metal source/drain（S/D） structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of suffi...Ge complementary tunneling field-effect transistors（TFETs） are fabricated with the NiGe metal source/drain（S/D） structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p-and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope（S factor）. Especially, I_d of 0.2 μA/μm is revealed at V_g-V_（th） = V_d = ±0.5 V for Ge pTFETs,with the S factor of 28 mV/dec at 7 K.展开更多
Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current-voltage characterisation technique with annealing temperatures from 300 ℃ to 500℃. Based on the current transport m...Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current-voltage characterisation technique with annealing temperatures from 300 ℃ to 500℃. Based on the current transport model, a simple method to extract parameters of the NiGe/Ge diode is presented by using the I-V characteristics. Parameters of NiGe/n-type Ge Schottky diodes fabricated for testing in this paper are as follows： the ideality factor n, the series resistance Rs, the zero-field barrier height Фb0, the interface state density Dit, and the interracial layer capacitance Ci. It is found that the ideality factor n of the diode increases with the increase of annealing temperature. As the temperature increases, the interface defects from the sputtering damage and the penetration of metallic states into the Ge energy gap are passivated, thus improving the junction quality. However, the undesirable crystallisations of Ni-germanide are observed together with NiGe at a temperature higher than 400℃. Depositing a very thin （-1 nm） heavily Ge-doped n＋ Ge intermediate layer can improve the NiGe film morphology significantly.展开更多
The effect of organic amendments on the oil content, heavy metals concentration and pH of petroleum contaminated sandy loam ultisol obtained from Rumuekpe oil field in Emohua Local Government Area of Rivers State, Nig...The effect of organic amendments on the oil content, heavy metals concentration and pH of petroleum contaminated sandy loam ultisol obtained from Rumuekpe oil field in Emohua Local Government Area of Rivers State, Nigeria was determined. Petroleum contaminated soils were treated with wood ash, compost and sawdust. The addition of organic amendments resulted in a significant(at 95% probability level) decrease in oil content by 92% for composting, 81% for soil treated with sawdust and 58% for soil with ash supplementation, over 6 months. The effect of treatments on the iron(Fe), copper(Cu) and lead(Pb) concentration was significant at P <0 001. The remediation also affected the pH of soil. This initial pH of 5 6 was depressed by the application of compost and sawdust supplements respectively to a final pH of 5 2 and 5 3. On the other hand, amending the soil with wood ash raised the pH from 5 6 to 6 2. Increased acidity caused a decrease in the heavy metals concentration in the contaminated soil. Soil treatment with compost generally gave the best remediation results, followed by sawdust and then ash. Adjusting the pH of oil contaminated soil to high acidic levels may promote the availability and migration of heavy metals in remediated soils and not necessarily the rate of oil mineralization.展开更多
High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a...High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm^2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61504120the Zhejiang Provincial Natural Science Foundation of China under Grant No LR18F040001the Fundamental Research Funds for the Central Universities
文摘Ge complementary tunneling field-effect transistors（TFETs） are fabricated with the NiGe metal source/drain（S/D） structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p-and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope（S factor）. Especially, I_d of 0.2 μA/μm is revealed at V_g-V_（th） = V_d = ±0.5 V for Ge pTFETs,with the S factor of 28 mV/dec at 7 K.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 60976068)the New Century Excellent Talents of Ministry of Education of China (Grant No. NCET-05-0851)+1 种基金the Cultivation Fund of Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083)the Applied Materials Innovation Fund(Grant No. XA-AM-200701)
文摘Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current-voltage characterisation technique with annealing temperatures from 300 ℃ to 500℃. Based on the current transport model, a simple method to extract parameters of the NiGe/Ge diode is presented by using the I-V characteristics. Parameters of NiGe/n-type Ge Schottky diodes fabricated for testing in this paper are as follows： the ideality factor n, the series resistance Rs, the zero-field barrier height Фb0, the interface state density Dit, and the interracial layer capacitance Ci. It is found that the ideality factor n of the diode increases with the increase of annealing temperature. As the temperature increases, the interface defects from the sputtering damage and the penetration of metallic states into the Ge energy gap are passivated, thus improving the junction quality. However, the undesirable crystallisations of Ni-germanide are observed together with NiGe at a temperature higher than 400℃. Depositing a very thin （-1 nm） heavily Ge-doped n＋ Ge intermediate layer can improve the NiGe film morphology significantly.
文摘The effect of organic amendments on the oil content, heavy metals concentration and pH of petroleum contaminated sandy loam ultisol obtained from Rumuekpe oil field in Emohua Local Government Area of Rivers State, Nigeria was determined. Petroleum contaminated soils were treated with wood ash, compost and sawdust. The addition of organic amendments resulted in a significant(at 95% probability level) decrease in oil content by 92% for composting, 81% for soil treated with sawdust and 58% for soil with ash supplementation, over 6 months. The effect of treatments on the iron(Fe), copper(Cu) and lead(Pb) concentration was significant at P <0 001. The remediation also affected the pH of soil. This initial pH of 5 6 was depressed by the application of compost and sawdust supplements respectively to a final pH of 5 2 and 5 3. On the other hand, amending the soil with wood ash raised the pH from 5 6 to 6 2. Increased acidity caused a decrease in the heavy metals concentration in the contaminated soil. Soil treatment with compost generally gave the best remediation results, followed by sawdust and then ash. Adjusting the pH of oil contaminated soil to high acidic levels may promote the availability and migration of heavy metals in remediated soils and not necessarily the rate of oil mineralization.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176092 and 61474094)the National Natural Science Foundation of China–National Research Foundation of Korea Joint Research Project(Grant No.11311140251)the National Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB632103)
文摘High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm^2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.
