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HBT's High Frequency Noise Modeling and Analysis
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作者 王延锋 吴德馨 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第11期1140-1145,共6页
A T equivalent high frequency heterojunction bipolar transistor (HBT) noise model is reported.This model is derived from Hawkins noise model commonly used in Si BJT.The main modifications include the influence of th... A T equivalent high frequency heterojunction bipolar transistor (HBT) noise model is reported.This model is derived from Hawkins noise model commonly used in Si BJT.The main modifications include the influence of the ideality factor,emitter resistance,intrinsic base collector capacitance,extrinsic base collector capacitance and other parasitic elements of HBT represented in equivalent circuit topology.In order to calculate accurate noise parameters from the equivalent circuit,the noise correlation matrix method is used to avoid any simplifications generated in circuit transformations and complex noise measurements.The analysis of the influence of the equivalent circuit elements on the minimum noise figure is reported,the results of analysis agree well with the physics explanations.By means of the formulae derived from device physics of HBT,the influence of device parameters on the minimum noise figure is also represented. 展开更多
关键词 heterojunction bipolar transistor noise modeling noise correlation matrix
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