In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is ...In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.展开更多
Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference...Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117.展开更多
A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage ga...A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1/f^2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is –119.4 d Bc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc/Hz.展开更多
基金Project supported by the National Key R&D Program of China(Grant No.2016YFB-0402403)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20141321)+1 种基金CAST Project,China(Grant No.08201601)the National Science Foundation for Young Scholars of China(Grant No.61404072)
文摘In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.
基金Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092)
文摘Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117.
基金Project supported by the National Science and Technology Major Project of China(No.2011ZX03004-002-01)
文摘A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1/f^2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is –119.4 d Bc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc/Hz.
