Internal Polarization Field Induced Hydroxyl Spillover Effect for Industrial Water Splitting Electrolyzers

The formation of multiple oxygen intermediates supporting efficient oxygen evolution reaction(OER)are affinitive with hydroxyl adsorption.However,ability of the catalyst to capture hydroxyl and maintain the continuous supply at active sits remains a tremendous challenge.Herein,an affordable Ni2P/FeP2 heterostructure is presented to form the internal polarization field(IPF),arising hydroxyl spillover(HOSo)during OER.Facilitated by IPF,the oriented HOSo from FeP2 to Ni2P can activate the Ni site with a new hydroxyl transmission channel and build the optimized reaction path of oxygen intermediates for lower adsorption energy,boosting the OER activity(242 mV vs.RHE at 100 mA cm-2)for least 100 h.More interestingly,for the anion exchange membrane water electrolyzer(AEMWE)with low concentration electrolyte,the advantage of HOSo effect is significantly amplified,delivering 1 A cm^(-2)at a low cell voltage of 1.88 V with excellent stability for over 50 h.

Polarization Band Effect and MEMS-Based Plasma Generation

We find that effects resulting from micro/nano scale structures can regulate space charges which excite and lead to the special electric field distribution featuring the flux convergence band structure.It is here referred to as the polarization band effect,which stems fromthespecificfield-induced interactionssamong atomsandmolecules.The micro/nanoelectrode array structures were designed and fabricated using the non-silicon micro/nano processing technology,forming micro/nano electrode arrays-based plasma microelectromechanical systems(NPMEMS).The integrated NPMEMS device can be used to regulate the inner energy states of matters and generate plasma based on the polarization band effect,all within a single chip-size limited local area or extending into a large volume space with the deployment of a distributed array of multiple devices.Its special physical and chemical properties can be utilized to greatly improve the efficiency of potential application systems or solve mechanism-level challenges in plasma-related applications of multiple fields.

Recent developments in chiral and spin polarization effects in heavy-ion collisions

We give a brief overview of recent theoretical and experimental results on the chiral magnetic effect and spin polarization effect in heavy-ion collisions.We present updated experimental results for the chiral magnetic effect and related phenomena.The time evolution of the magnetic fields in different models is discussed.The newly developed quantum kinetic theory for massive fermions is reviewed.We present theoretical and experimental results for the polarization of K hyperons and the q00 value of vector mesons.

Experimental Study of Induced Polarization Effect in Unconventional Reservoir Rocks

Unconventional hydrocarbon reserves substantially surpass those of conventional resources and therefore are extremely economically attractive. However, exploration and production of uncon-ventional reserves is challenging. This paper demonstrates that one can observe significant induced polarization effects in shale reservoir rocks, which can be used in exploration for unconventional reserves. The generalized effective-medium theory of induced polarization (GEMTIP) was used to model the complex resistivity of shale rocks. We demonstrate that GEMTIP modeling provides an evaluation of mineral composition and volume fractions in rock samples. We have conducted spectral induced polarization (IP) measurements using different types of shale rocks to test the feasibility of the IP method and GEMTIP modeling for studying unconventional hydrocarbon (HC) reservoir rocks.

2-Hexyl-4-Pentylenic Acid(HPTA) Stimulates the Radiotherapy-induced Abscopal Effect on Distal Tumor through Polarization of Tumor-associated Macrophages

Objective The aim of this study was to explore the effects of 2-hexyl-4-pentylenic acid(HPTA)in combination with radiotherapy(RT)on distant unirradiated breast tumors.Methods Using a rat model of chemical carcinogen(7,12-dimethylbenz[a]anthracene,DMBA)-induced breast cancer,tumor volume was monitored and treatment response was evaluated by performing HE staining,immunohistochemistry,immunofluorescence,q RT-PCR,and western blot analyses.Results The results demonstrated that HPTA in combination with RT significantly delayed the growth of distant,unirradiated breast tumors.The mechanism of action included tumor-associated macrophage(TAM)infiltration into distant tumor tissues,M1 polarization,and inhibition of tumor angiogenesis by IFN-γ.Conclusion The results suggest that the combination of HPTA with RT has an abscopal effect on distant tumors via M1-polarized TAMs,and HPTA may be considered as a new therapeutic for amplifying the efficacy of local RT for non-targeted breast tumors.

Anomalous valley Hall effect in two-dimensional valleytronic materials

The anomalous valley Hall effect(AVHE)can be used to explore and utilize valley degrees of freedom in materials,which has potential applications in fields such as information storage,quantum computing and optoelectronics.AVHE exists in two-dimensional(2D)materials possessing valley polarization(VP),and such 2D materials usually belong to the hexagonal honeycomb lattice.Therefore,it is necessary to achieve valleytronic materials with VP that are more readily to be synthesized and applicated experimentally.In this topical review,we introduce recent developments on realizing VP as well as AVHE through different methods,i.e.,doping transition metal atoms,building ferrovalley heterostructures and searching for ferrovalley materials.Moreover,2D ferrovalley systems under external modulation are also discussed.2D valleytronic materials with AVHE demonstrate excellent performance and potential applications,which offer the possibility of realizing novel low-energy-consuming devices,facilitating further development of device technology,realizing miniaturization and enhancing functionality of them.

Elliptically polarized high-order harmonic generation of Ar atom in an intense laser field

High-order harmonic generation(HHG) of Ar atom in an elliptically polarized intense laser field is experimentally investigated in this work.Interestingly,the anomalous ellipticity dependence on the laser ellipticity(ε) in the lower-order harmonics is observed,specifically in the 13rd-order,which displays a maximal harmonic intensity at ε ≈ 0.1,rather than at ε = 0 as expected.This contradicts the general trend of harmonic yield,which typically decreases with the increase of laser ellipticity.In this study,we attribute this phenomenon to the disruption of the symmetry of the wave function by the Coulomb effect,leading to the generation of a harmonic with high ellipticity.This finding provides valuable insights into the behavior of elliptically polarized harmonics and opens up a potential way for exploring new applications in ultrafast spectroscopy and light–matter interactions.

Influence of Isotope Effects on Product Polarizations of N(~2D)+D_2, N(~2D)+H_2 and N(~2D)+HD Reactive Systems

To figure out the influence of isotope effect on product polarizations of the N（2D）＋D2 reactive system and its isotope variants, quasi-classical trajectory（QCT） calculation was performed on Ho＇s potential energy surface（PES） of 2A″ state. Product polarizations such as product distributions of P（θr）, P（φr） and P（θr,φr）, as well as the generalized polarization-dependent differential cross sections（PDDCSs） were discussed and compared in detail among the four product channels of the title reactions. Both the intermolecular and intramolecular isotope effects were proved to be influential on product polarizations.

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.

Influences of surface and flexoelectric polarization on the effective anchoring energy in nematic liquid crystal

The physical effects on surface and flexoelectric polarization in a weak anchoring nematic liquid crystal cell are investigated systematically. We derive the analytic expressions of two effective anchoring energies for lower and upper substrates respectively as well as their effective anchoring strengths and corresponding tilt angles of effective easy direction.All of these quantities are relevant to the magnitudes of both two polarizations and the applied voltage U. Based on these expressions, the variations of effective anchoring strength and the tilt angle with the applied voltage are calculated for the fixed values of two polarizations. For an original weak anchoring hybrid aligned nematic cell, it may be equivalent to a planar cell for a small value of U and has a threshold voltage. The variation of reduced threshold voltage with reduced surface polarization strength is also calculated. The role of surface polarization is important without the adsorptive ions considered.

Effect of Quasi-Fermi Level on the Degree of Electron Spin Polarization in GaAs

With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolu- tion of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 1OK. We consider the exciting light with right-handed circular polarization, and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of ｜1/2） and ｜- 1/2） spin conduction bands. At room temperature, the degree of electron spin polarization decreases sharply from 1 near the bottom of the conduction band, and then increases to a stable value above the quasi-Fermi level of the ｜- 1/2） band. The greater the quasi-Fermi level is, the higher the degree of electron spin polarization with excessive en- ergy above the quasi-Fermi level of the ｜- 1/2） band can be achieved. At low temperature, the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band, and then increases with the excessive energy, and in particular, up to a maximum of i above the quasi-Fermi level of the ｜1/2） band.

Magnetoelectric coupling effect of polarization regulation in BiFeO_(3)/LaTiO_(3)heterostructures

An effective regulation of the magnetism and interface of ferromagnetic materials is not only of great scientific significance,but also has an urgent need in modern industry.In this work,by using the first-principles calculations,we demonstrate an effective approach to achieve non-volatile electrical control of ferromagnets,which proves this idea in multiferroic heterostructures of ferromagnetic La TiO_(3)and ferroelectric Bi FeO_(3).The results show that the magnetic properties and two-dimensional electron gas concentrations of La TiO_(3)films can be controlled by changing the polarization directions of Bi FeO_(3).The destroyed symmetry being introduced by ferroelectric polarization of the system leads to the transfer and reconstruction of the Ti-3 d electrons,which is the fundamental reason for the changing of magnetic properties.This multiferroic heterostructures will pave the way for non-volatile electrical control of ferromagnets and have potential applications.

High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

We report on the temperature-dependent dc performance of A1GaN/GaN polarization doped field effect transistors （PolFETs）. The rough decrements of drain current and transeonductance with the operation temperature are observed. Compared with the conventional HFETs, the drain current drop of the PolFET is smaller. The transeonductance drop of PolFETs at different gate biases shows different temperature dependences. From the aspect of the unique carrier behaviors of graded AlGaN/GaN heterostructure, we propose a quasi-multi-channel model to investigate the physics behind the temperature-dependent performance of AlGaN/GaN PolFETs.

Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors

Organic ferroelectric field-effect transistors （OFeFETs） are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.

Effective Pyroelectric Coefficient and Polarization Offset of Compositionally Step-like Graded Ferroelectric Structures

In this paper, the effective pyroelectric coefficient and polarization offset of the compositionally step-like graded multilayer ferroelectric structures have been studied by use of the first-principles approach. It is exhibited that the dielectric gradient has a nontrivial influence on the effective pyroelectric coefficient, but has a little influence on the polarization offset; and the polarization gradient plays an important role in the abnormal hysteresis loop phenomenon of the co.mpositionally step-like graded ferroelectric structures. Moreover, the origin of the polarization offset is explored,which can be attributed to the polarization gradient in the compositionally step-like graded structure.

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_(0.18) Al_(0.82) N/AlN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.

Optimal design of sub-wavelength metal rectangular gratings for polarizing beam splitter based on effective medium theory

A novel optimal design of sub-wavelength metal rectangular gratings for the polarizing beam splitter （PBS） is proposed. The method is based on effective medium theory and the method of designing single layer antireflection coating. The polarization performance of PBS is discussed by rigorous couple-wave analysis （RCWA） method at a wavelength of 1550 nm. The result shows that sub-wavelength metal rectangular grating is characterized by a high reflectivity, like metal films for TE polarization, and high transmissivity, like dielectric films for TM polarization. The optimal design accords well with the results simulated by RCWA method.

Anomalous chiral transports and spin polarization in heavy-ion collisions

Relativistic heavy-ion collisions create hot quark–gluon plasma as well as very strong electromagnetic(EM)and fluid vortical fields.The strong EM field and vorticity can induce intriguing macroscopic quantum phenomena such as chiral magnetic,chiral separation,chiral electric separation,and chiral vortical effects as well as the spin polarization of hadrons.These phenomena provide us with experimentally feasible means to study the nontrivial topological sector of quantum chromodynamics,the possible parity violation of strong interaction at high temperature,and the subatomic spintronics of quark–gluon plasma.These studies,both in theory and in experiments,are strongly connected with other subfields of physics such as condensed matter physics,astrophysics,and cold atomic physics,and thus form an emerging interdisciplinary research area.We give an introduction to the aforementioned phenomena induced by the EM field and vorticity and an overview of the current status of experimental research in heavy-ion collisions.We also briefly discuss spin hydrodynamics as well as chiral and spin kinetic theories.

Suppressing the preferential σ-polarization oscillation in a high power Nd:YVO_4 laser with wedge laser crystal

We observe the phenomenon of priority oscillation of the unexpected a-polarization in high-power Nd：YVO4 ring laser. The severe thermal lens of the a-polarized lasing, compared with the n-polarized lasing, is the only reason for the phenomenon. By designing a wedge Nd：YVO4 crystal as the gain medium, the unexpected a-polarization is completely suppressed in the entire range of pump powers, and the polarization stability of the expected zc-polarized output is enhanced. With the output power increasing from threshold to the maximum power, no a-polarization lasing is observed. As a result, 25.3 W of stable single-frequency laser output at 532 nm is experimentally demonstrated.