Effect of gas components on the postdischarge temporal behavior of OH and O of a non-equilibrium atmospheric pressure plasma driven by nanosecond voltage pulses

OH radicals and O atoms are two of the most important reactive species of non-equilibrium atmospheric pressure plasma(NAPP),which plays an important role in applications such as plasma medicine.However,experimental studies on how the gas content affects the postdischarge temporal evolutions of OH and O in the noble gas ns-NAPP are very limited.In this work,the effect of the percentages of O_(2),N_(2),and H_(2)O on the amounts of OH and O productions and their post-discharge temporal behaviors in ns-NAPP is investigated by laser-induced fluorescence(LIF)method.The results show that the productions of OH and O increase and then decrease with the increase of O_(2)percentage.Both OH and O densities reach their maximum when about 0.8%O_(2)is added.Further increase of the O_(2)concentration results in a decrease of the initial densities of both OH and O,and leads to their faster decay.The increase of N_(2)percentage also results in the increase and then decrease of the OH and O densities,but the change is smaller.Furthermore,when the H_(2)O concentration is increased from 100 to 3000 ppm,the initial OH density increases slightly,but the OH density decays much faster,while the initial density of O decreases with the increase of the H_(2)O concentration.After analysis,it is found that OH and O are mainly produced through electron collisional dissociation.O(^(1)D)is critical for OH generation.O_(3)accelerates the consumption processes of OH and O at high O_(2)percentage.The addition of H_(2)O in the NAPP considerably enhances the electronegativity,while it decreases the overall plasma reactivity,accelerates the decay of OH,and reduces the O atom density.

Electron impact total(elastic+inelastic) cross sections with simple molecules consisting of N & O atoms at 100-1600eV

A model complex optical potential rewritten by the conception of bonded atom, which considers the overlapping effect of electron cloud, is employed to calculate the total (elastic + inelastic) cross sections with simple molecules (N2, O2, NO2, NO, N2O) consisting of N & O atoms over an incident energy range of 100 - 1600 eV by the use of additivity rule at Roothaan-Hartree-Fock level. In the study, the complex optical potential composed of static, exchange, correlation polarization plus absorption contributions firstly uses bonded-atom conception. The qualitative results are compared with experimental data and other calculations wherever available and good agreement is obtained. The total cross sections of electron-molecule scattering above 100 eV can be successfully calculated.

Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs

Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)devices.In-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly bonded oxygen(O)atoms exist in a-IGZO thin films deposited at high O_(2) pressures,but these can be eliminated by vacuum annealing.The threshold voltage(V_(th))of the a-IGZO TFTs is shifted under positive gate bias,and the Vth shift is positively related to the deposition pressure.A temperature variation experiment in the range of 20 K-300 K demonstrates that an activation energy of 144 meV is required for the Vth shift,which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin films.Accordingly,the Vth shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO_(2) interface under positive gate bias.These results provide an insight into the mechanism responsible for the Vth shift of the a-IGZO TFTs and help in the production of reliable designs.

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al_2O_3 films

Chemical and field-effect passivation of atomic layer deposition （ALD） Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy （TEM） and X-ray photoelectron spectroscopy （XPS）, respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.

Surface Engineered Ru_(2)Ni Multilayer Nanosheets for Hydrogen Oxidation Catalysis

The hydrogen oxidation reaction(HOR)in alkaline conditions is of great importance for the application of anion exchange membrane fuel cells(AEMFCs).However,the electrocatalysts for alkaline HOR generally suffer from the disadvantage of sluggish kinetics.Herein,we have fabricated Ru2Ni multilayered nanosheets(Ru2Ni MLNSs)in the layer-by-layer manner and engineered the surface properties via postannealing for efficient alkaline HOR.Detailed investigations reveal that such annealing at different temperatures can alter the surface properties of Ru2Ni MLNSs and thus regulate their adsorption abilities toward*H and*OH.In particular,the optimal catalyst exhibits a mass activity of 4.34 A mgRu−1 at an overpotential of 50 mV,which is 18.1 and 13.2 times higher than those of Ru/C(0.24 A mgRu−1)and Pt/C(0.33 A mgPt−1),respectively.Theoretical calculations indicate that the presence of surface O atoms can facilitate the HOR activity while the excessive coverage of O atoms on Ru2Ni surface leads to the strengthened H binding and the decay of HOR activity.This work not only provides an efficient catalyst for alkaline HOR,but it also may shed new light on the design of high-performance catalysts for electrocatalysis and beyond.We have fabricated Ru2Ni multilayer nanosheets(Ru2Ni MLNSs)and realized the surface engineering via an annealing process.Detailed investigations show that such surface engineering can regulate the surface properties and thus promote the alkaline HOR activity.Consequently,the optimal catalyst exhibits a much higher activity than those of commercial Ru/C and Pt/C and is a promising catalyst for alkaline HOR.

Effects of substrate characteristics on the passivation performance of ALD-Al_2O_3 thin film for high-efficiency solar cells

Atom layer deposition （ALD）-Al2O3 thin films are considered effective passivation layers for p-type silicon surfaces. A lower surface recombination rate was obtained through optimizing the deposition parameters. The effects of some of the basic substrate characteristics including material type, bulk resistivity and surface morphology on the passivation performance of ALD-Al2O3 are evaluated in this paper. Surface recombination velocities of 7.8 cm/s and 6.5 cm/s were obtained for p-type and n-type wafers without emitters, respectively. Substrates with bulk resistivity ranging from 1.5 to 4 Ω · cm were all great for such passivation films, and a higher implied Voc of 660 mV on the 3 Ω · cm substrate was achieved. A minority carrier lifetime （MCL） of nearly 10 μs higher was obtained for cells with a polished back surface compared to those with a textured surface, which indicates the necessity of the polishing process for high-efficiency solar cells. For n-type semi-finished solar cells, a lower effective front surface recombination velocity of 31.8 cm/s was acquired, implying the great potential of （ALD）-Al2O3 thin films for high-efficiency n-type solar cells.

H atom transfer of collinear OH…O system

A quantum mechanical calculation was performed to study the hydrogen atom transfer of collinear OH…O/OD…O system, for which Delves' coordinates and R-matrix propagation method were applied in a Melius-Blint potential energy surface. The calculation result showed that the state-state H atom transfer probability comported strong oscillation phenomena and collision delay time of the title system was in the fs-ps time scale. The kinetic isotope effect was calculated in this work too.