Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed duri...Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation.展开更多
In the near future,the Phase-Ⅱ beamline project of Shanghai Synchrotron Radiation Facility(SSRF)will be implemented and some dipoles in the storage ring will be replaced by high field dipoles(super-bend),so as to lea...In the near future,the Phase-Ⅱ beamline project of Shanghai Synchrotron Radiation Facility(SSRF)will be implemented and some dipoles in the storage ring will be replaced by high field dipoles(super-bend),so as to leave room for short straight sections.In this way,the brightness of the hard x-ray emitted from the super-bends can be enhanced,and more insertion devices can be installed.In this paper,super-bends of two lengths are discussed and the corresponding lattices are presented.展开更多
A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15...A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.展开更多
感应熔炼制备La0.8-xCexMg0.2 Ni 3.8(x=0,0.1,0.3,0.5),研究Ce替代部分La对La4MgNi19超晶格负极材料相结构及电化学性能的影响。研究表明,La4MgNi19合金相由LaNi5,(La,Mg)2Ni7,(La,Mg)5Ni19(3R-Ce5Co19)相组成。加入Ce后,(La,Mg)2Ni7...感应熔炼制备La0.8-xCexMg0.2 Ni 3.8(x=0,0.1,0.3,0.5),研究Ce替代部分La对La4MgNi19超晶格负极材料相结构及电化学性能的影响。研究表明,La4MgNi19合金相由LaNi5,(La,Mg)2Ni7,(La,Mg)5Ni19(3R-Ce5Co19)相组成。加入Ce后,(La,Mg)2Ni7相消失,出现2H-Pr 5Co 19结构的(La,Mg)5Ni19相,同时随着Ce替代量的增多,(La,Mg)5Ni19相含量增多,LaNi5相随之减少,Ce加入有利于形成A5B19相,特别是形成2H-Pr5Co19结构。电化学放电容量随着x值的增加呈现先增后减趋势,x=0.1时样品的电化学放电容量380.36 mAh/g最佳。合金电极活化次数、容量保持率和倍率放电性能随着Ce含量增加而增大。H在合金中的扩散速率是影响其倍率放电性能主要因素。展开更多
基金supported by the research fund of Chungnam National University
文摘Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation.
文摘In the near future,the Phase-Ⅱ beamline project of Shanghai Synchrotron Radiation Facility(SSRF)will be implemented and some dipoles in the storage ring will be replaced by high field dipoles(super-bend),so as to leave room for short straight sections.In this way,the brightness of the hard x-ray emitted from the super-bends can be enhanced,and more insertion devices can be installed.In this paper,super-bends of two lengths are discussed and the corresponding lattices are presented.
基金supported by the National Basic Research Program of China(Grant Nos.2013CB932904 and 2011CB922201)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)the National Natural Science Foundation of China(Grant Nos.61274013,61290303,and 61306013)
文摘A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.
文摘超分辨结构光照明显微成像技术(super-resolution structured illumination microscopy,SR-SIM)具有时间分辨率高、光漂白和光毒性低和对荧光探针的要求少等优点,适用于活细胞的长时程超分辨成像.采用二维晶格结构光作为照明光,可以实现更快的成像速度和更低的光毒性,但同时也增加了系统的复杂性.为了解决此问题,本文提出了一种基于数字微镜器件的快速超分辨晶格结构光照明显微成像方法(digital micromirror device-based lattice SIM,DMD-Lattice-SIM),通过同步分时触发DMD和sCMOS相机的方式实现二维正交晶格结构光的产生,且只需要采集5幅相移原始图像即可重构出超分辨图像,相比于传统SR-SIM需要9幅相移原始图像的方法,图像采集时间减少了约44.4%.同时,在基于空域和频域联合的SIM重构算法(joint space and frequency reconstruction method-SIM,JSFR-SIM)的基础上,本文还发展了用于Lattice-SIM的JSFR超分辨图像重构方法(Lattice-JSFR-SIM),先在频域对原始图像进行预滤波处理;然后,在空域对滤波后的图像进行超分辨重构处理.与传统频域图像重构处理对比,该方法在512×512像素数的成像视场下重构时间减少了约55.6%,对于实现活细胞实时超分辨成像具有重要意义和应用价值.
