Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer

A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.

Investigation of HNO_3 Chemincally Oxidized Porous Silicon

The stability of the photoluminescence (PS) has evidently improvedby HNO3 chemical oxidation The PL intensity and peak wavelength of PS were changed with theHNO3 of HNO3 concentration and oxidation time. Being different from other oxidation time. Being different from other oxidized ways, the PSoxidized by HNO3 remains remains sensitive to adsorbates. FTTR spectroscopic data suggest that these phenomena are attributed to the presence of HSi(SiaO30a)(a≤3)layer on PS surface.

Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer

The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.

氧化多孔硅上制作Cu电感的研究

给出了一种厚膜氧化多孔硅(OPS)层上制作Cu电感的新型工艺技术。由于OPS是一种低损耗的材料,铜的电阻率很低,采用OPS隔离硅衬底和Cu线圈能够降低电感的寄生损耗,提高电感Q值。实验过程中将孔隙度>56%的多孔硅厚膜利用两步氧化法氧化为OPS厚膜,通过种子层溅射/光刻/电镀Cu/刻蚀种子层的方法完成了Cu线圈的电镀。获得了1nH的电感,其Q值在10GHz的频率下达到了9,电感的自谐振频率超过20GHz。

邻氯苯基荧光酮胶束光度法测定氮化硅中镁的研究

研究了在氯化十六烷基吡啶（ＣＰＣ）和乳化剂ＯＰ存在下，Ｍｇ与邻氯苯基荧光酮（ｏ－Ｃｌ－ＰＦ）的显色反应。在ｐＨ１２的碱性介质中，Ｍｇ（Ⅱ）与ｏ－Ｃｌ－ＰＦ形成１：３的蓝色配合物，其λ＿ｍａｘ＝６１２ｎｍ，表现摩尔吸光系数ε＿６１２＝１．３９×１０￣５Ｌ·ｍｏｌ￣－１·ｃｍ￣－１，Ｍｇ（Ⅱ）在０～０．２μｇ／ｍｌ范围内符合比尔定律。方法用于新陶瓷材料氮化硅（Ｓｉ＿３Ｎ＿４）中微量ＭｇＯ的测定，其结果与原子吸收光谱法相符。

Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates

The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (I-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.

Porosity and Oxide Layer Dependence of Thermal Shock Behavior of Porous Silicon Nitride Ceramics

A water-quenching technique has been adopted to evaluate thermal shock fracture and fatigue behaviors of porous Si3N4 ceramics in an air atmosphere. The high-porosity Si3N4 ceramics exhibit a higher strength retention and a better resistance to thermal shock fatigue because of its role of the pores as crack arresters.A dense and coherent surface oxide layer leads to a significant benefit in residual strength during thermal fatigue, however, an increased fatigue number to 30 th cycle cannot cause a further influence although a thicker oxide layer presents, which is attributed to holes defect and disappearance of part intergranular phase.

Study on electroluminescence from porous silicon light-emitting diode

Porous silicon （PS） light-emitting diode （LED） with an ITO/PS/p-Si/A1 structure was fabricated by anodic oxidation method. Photoluminescence （PL） of the PS LED was measured with a peak at 593 nm, and electroluminescence （EL） was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

Determination of the effective refractive index of porous silicon/polymer composite films

The equation for calculating the effective refractive index of porous silicon inserted polymer was obtained by three-component Bruggeman effective medium model. The dependence of the effective refractive index of porous silicon/polymer composite films on the polymer fraction with various initial porosity was given theorically and experimentally respectively. The porous silicon and polymer polymethylmetacrylate based dispersive red one （PMMA/DR1） composite films were fabricated in our experiments. It is found that the measured effective refractive index of porous silicon inserted polymer was slightly lower than the calculated result because of the oxidization of porous silicon. The effective refractive index of oxidized porous silicon inserted polymer also was analyzed by four-component medium system.

Optical characteristics and environmental pollutants detection of porous silicon microcavities

Porous silicon microcavities (PSM) optical crystals consisting of a Fabry-Perot microcavity embedded between two distributed Bragg reflectors have been fabricated by electrochemical etching. Scanning electron microscopy (SEM) clearly depicted their physical sandwich construction. The optical feature of the PSM structure was tuned by varying the anodization parameters. Through proper thermal oxidation and surface chemical modifications, the resulting structures were employed as optical sensors for the detection of environmental pollutants including volatile organic vapors (i.e. acetonitrile, toluene, cyclohexane, chloroform, acetone and ethanol) and interior decoration gases (i.e. toluene, ammonia and formaldehyde). Fourier transform infrared spectroscopy (FTIR) spectra confirmed the effective thermal annealing and surface modification chemistry, and the sensing process was accompanied by recording the modified structures' optical responses when exposed to target analytes. The PSM optical sensors showed good stability, sensitivity and selectivity, implying promising applications in gas sensing and en- vironmental monitoring.

Properties of fluorescence based on the immobilization of graphene oxide quantum dots in nanostructured porous silicon films

The fluorescence of graphene oxide quantum dots （GOQDs） that are infiltrated into porous silicon （PSi） is investigated. By dropping activated GOQDs solution onto silanized PSi samples, GOQDs are successfully in- filtrated into a PSi device. The results indicate that the intensity of the fluorescence of the GOQD-inflltrated multilayer with a high reflection band located at its fluorescence spectra scope is approximately double that of the single layer sample. This indicates that the multilayer GOQD-infiltrated PSi substrate is a suitable material for the preparation of sensitive photoluminescence biosensors.

用于RF无源器件的氧化多孔硅隔离层技术

为了提高片上射频(RF)无源器件的性能,可以利用氧化多孔硅厚膜隔离硅衬底来降低硅衬底的高频损耗。通过采用SerenadeSV建模对共面波导传输性能的分析,计算了不同厚度的氧化多孔硅隔离层硅衬底的损耗。结果表明氧化多孔硅(OPS)隔离层能够极大地降低硅衬底在高频条件下的损耗。实验制备过程中采用电化学阳极氧化法在n+衬底上制备了多孔硅厚膜,继而将孔隙度大于56%的多孔硅样品利用两步氧化法氧化为氧化多孔硅厚膜,有效地解决制备过程中的隆起失效和崩裂失效问题。测量了多孔硅的生长速率和氧化多孔硅的表面形貌。制作了一个氧化多孔硅隔离层上的5nH的Cu平面电感,在2.4GHz时电感的品质因数(Q值)超过了6。