介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号...介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号等效电路模型的仿真计算,得出其截止频率,并提出了改善其动作特性的途径。展开更多
The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presen...The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.展开更多
文摘介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号等效电路模型的仿真计算,得出其截止频率,并提出了改善其动作特性的途径。
文摘The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.
