The ruins of GugeKingdom arefound in Ngari,atthe westernmostpoint of the Tibet Plateau. Itabuts India in the west andsouth,Kashmir in the north-west and Xinjiang in the north.Screened by mountains onthree sides,it is ...The ruins of GugeKingdom arefound in Ngari,atthe westernmostpoint of the Tibet Plateau. Itabuts India in the west andsouth,Kashmir in the north-west and Xinjiang in the north.Screened by mountains onthree sides,it is tucked awayat an elevation of 4,000meters. This is a part of theworld which is very dry.TheZhangzhung Culture existedbefore the kingdom wasfounded.展开更多
Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimen...Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.展开更多
The role of lncRNA KCNQ1 opposite strand/antisense transcript 1(KCNQ1OT1)in colon cancer involves various tumorigenic processes and has been studed widely.However,the mechanism by which it promotes colon cancer remain...The role of lncRNA KCNQ1 opposite strand/antisense transcript 1(KCNQ1OT1)in colon cancer involves various tumorigenic processes and has been studed widely.However,the mechanism by which it promotes colon cancer remains unclear.Retrovirnl vector pSEB61 was retroftted in established HCT116 siKCN and SW480-siKCN cells to silence KCNQ1 OT1.Cellular proliferation was measured using CCK8 assay,and flow cytometry(FCM)detected cell cydle changes.RNA sequencing(RNA Seq)analysis showed differentially expressed genes(DEGs).Gene ontology(GO)and Kyoto Encyclopedia of Genes and Genomes(KEGG)pathway enrichment analyses were carried out to analyze enriched functions and signaling pathways.RT-qPCR,immunofluorescence,and western blotting were carried out to validate downstream gene expressions.The effects of tumorigenesis were evaluated in BALB/c nude mice by tumor xenografts.Our data revealed that the silencing of KONQ1OT1 in HCT116 and SW480 cells slowed cell growth and decreased the number of cells in the G2/M phase.RNA-Seq analysis showed the data of DEGs enriched in various GO and KEGG pathways such as DNA replication and cell cyde.RT qPCR,immunofluorescence,and western blotting confirmed downstream CCNE2 and PCNA gene expressions.HCT116 siKCN cells signifcantly suppressed tumorigenesis in BALB/c nude mice.Our study suggests that lncRNA KCNQ1OT1 may provide a promising therapeutic strategy for colon cancer.展开更多
文摘The ruins of GugeKingdom arefound in Ngari,atthe westernmostpoint of the Tibet Plateau. Itabuts India in the west andsouth,Kashmir in the north-west and Xinjiang in the north.Screened by mountains onthree sides,it is tucked awayat an elevation of 4,000meters. This is a part of theworld which is very dry.TheZhangzhung Culture existedbefore the kingdom wasfounded.
基金M.Zhu acknowledges support by the National Outstanding Youth Program(62322411)the Hundred Talents Program(Chinese Academy of Sciences)+1 种基金the Shanghai Rising-Star Program(21QA1410800)The financial support was provided by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB44010200).
文摘Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.
基金the Scientific Research Project of Anhui Provincial Health Commission in 2021(#AHWJ2021b109 to LS)Scientific and Technological Research Program of Chongqing Municipal Education Commission(#KJZD-K201900402 to TZ)+1 种基金Special Fund for Wannan Medical College Scholar Project(#WK2021F07)Educational Commission of Anhui Province of China(2022AH051241).
文摘The role of lncRNA KCNQ1 opposite strand/antisense transcript 1(KCNQ1OT1)in colon cancer involves various tumorigenic processes and has been studed widely.However,the mechanism by which it promotes colon cancer remains unclear.Retrovirnl vector pSEB61 was retroftted in established HCT116 siKCN and SW480-siKCN cells to silence KCNQ1 OT1.Cellular proliferation was measured using CCK8 assay,and flow cytometry(FCM)detected cell cydle changes.RNA sequencing(RNA Seq)analysis showed differentially expressed genes(DEGs).Gene ontology(GO)and Kyoto Encyclopedia of Genes and Genomes(KEGG)pathway enrichment analyses were carried out to analyze enriched functions and signaling pathways.RT-qPCR,immunofluorescence,and western blotting were carried out to validate downstream gene expressions.The effects of tumorigenesis were evaluated in BALB/c nude mice by tumor xenografts.Our data revealed that the silencing of KONQ1OT1 in HCT116 and SW480 cells slowed cell growth and decreased the number of cells in the G2/M phase.RNA-Seq analysis showed the data of DEGs enriched in various GO and KEGG pathways such as DNA replication and cell cyde.RT qPCR,immunofluorescence,and western blotting confirmed downstream CCNE2 and PCNA gene expressions.HCT116 siKCN cells signifcantly suppressed tumorigenesis in BALB/c nude mice.Our study suggests that lncRNA KCNQ1OT1 may provide a promising therapeutic strategy for colon cancer.
