The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarizatio...The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.展开更多
A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density ...A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density and mobility are mini-mally affected by device scaling.However,the Schottky barrier height(SBH)of N-polarity GaN is low.This leads to a large gate leakage in N-polarity GaN-based HEMTs.In this work,we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes(SBDs)with Ni/Au electrodes.Our results show that the annealing time and tem-perature have a large influence on the electrical properties of N-polarity GaN SBDs.Compared to the N-polarity SBD without annealing,the SBH and rectification ratio at±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700,respec-tively,and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process.Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the inter-face state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emis-sion from the trap state at low reverse bias.展开更多
The formation of low-resistance Ohmic contacts in Ga_(2)O_(3) is crucial for high-performance electronic devices. Conventionally, a titanium/gold(Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulti...The formation of low-resistance Ohmic contacts in Ga_(2)O_(3) is crucial for high-performance electronic devices. Conventionally, a titanium/gold(Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulting in mutual diffusion of atoms at the interface. However, the specific role of diffusing elements in Ohmic contact formation remains unclear.In this work, we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga_(2)O_(3). We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural characterizations.Using density functional theory, we construct a model of the interface and calculate the charge density, partial density of states, planar electrostatic potential energy, and I–V characteristics. Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier, leading to low-resistance Ohmic contacts in Ga_(2)O_(3). These findings provide valuable insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga_(2)O_(3)-based electronic devices.展开更多
The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further...The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.展开更多
Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral re...Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral results confirm that a relatively higher boron concentration(~1.1×10^(21) cm^(-3))is detected on the HPDG with respect to the SCD region(~5.4×10^(20) cm^(-3)).It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination.The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination,which means that the HPDGs provide a leakage path to form an ohmic contact.There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions.The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.展开更多
Establishing highly effective charge transfer channels in carbon nitride(g-C_(3)N_(4)) to enhance its photocatalytic activity is still a challenging issue.Herein,the delaminated 2D Ti_(3)C_(2) MXene nanosheets were em...Establishing highly effective charge transfer channels in carbon nitride(g-C_(3)N_(4)) to enhance its photocatalytic activity is still a challenging issue.Herein,the delaminated 2D Ti_(3)C_(2) MXene nanosheets were employed to decorate the P-doped tubular g-C_(3)N_(4)(PTCN)for engineering 1D/2D Schottky heterojunction(PTCN/TC)through electrostatic self-assembly.The optimized PTCN/TC exhibited the highest hydrogen evolution rate(565 μmol h^(-1)g^(-1)),which was 4.3 and 2.0-fold higher than pristine bulk g-C_(3)N_(4) and PTCN,respectively.Such enhancement may be primarily attributed to the phosphorus heteroatom doped and unique structure of 1D/2D g-C_(3)N_(4)/Ti_(3)C_(2) Schottky heterojunction,enhancing the light-harvesting and charges’separation.One-dimensional pathway of g-C_(3)N_(4) tube and built-in electric field of interfacial Schottky effect can significantly facilitate the spatial separation of photogenerated charge carriers,and simultaneously inhibit their recombination via Schottky barrier.In this composite,metallic Ti_(3)C_(2) was served as electrons sink and photons collector.Moreover,ultrathin Ti_(3)C_(2) flake with exposed terminal metal sites as a co-catalyst exhibited higher photocatalytic reactivity in H2 evolution compared to carbon materials(such as reduced graphene oxide).This work not only proposed the mechanism of tubular g-C_(3)N_(4)/Ti_(3)C_(2) Schottky junction in photocatalysis,but also provided a feasible way to load ultrathin Ti_(3)C_(2) as a co-catalyst for designing highly efficient photocatalysts.展开更多
Photocatalytic water splitting on noble metal-free photocatalysts for H_(2) generation is a promising but challenging approach to realize solar-to-chemical energy conversion.In this study,Mo/Mo_(2)C nanoparticles anch...Photocatalytic water splitting on noble metal-free photocatalysts for H_(2) generation is a promising but challenging approach to realize solar-to-chemical energy conversion.In this study,Mo/Mo_(2)C nanoparticles anchored carbon layer(Mo/Mo_(2)C@C)was obtained by a one-step in-situ phase transition approach and developed for the first time as a photothermal cocatalyst to enhance the activity of ZnIn_(2)S_(4)photocatalyst.Mo/Mo_(2)C@C nanosheet exhibits strong absorption in the full spectrum region and excellent photo-thermal conversion ability,which generates heat to improve the reaction temperature and accelerate the reaction kinetics.Moreover,metallic Mo/Mo_(2)C@C couples with ZnIn_(2)S_(4)to form ZnIn_(2)S_(4)-Mo/Mo_(2)C@C Schottky junction(denoted as ZMM),which prevents the electrons back transfer and restrains the charge recombination.In addition,conductive carbon with strong interfacial interaction serves as a fast charge transport bridge.Consequently,the optimized ZMM-0.2 junction exhibits an H2 evolution rate of 1031.07μmol g^(-1)h^-(1),which is 41 and 4.3 times higher than bare ZnIn_(2)S_(4)and ZnIn_(2)S_(4)-Mo2C,respectively.By designing novel photothermal cocatalysts,our work will provide a new guidance for designing efficient photocatalysts.展开更多
A power-supply system was developed for Ohmic heating(OH)to double×10^(18)the amount of change magnetic flux in the primary central solenoid(CS)on the QUEST spherical tokamak.Two power supplies are connected with...A power-supply system was developed for Ohmic heating(OH)to double×10^(18)the amount of change magnetic flux in the primary central solenoid(CS)on the QUEST spherical tokamak.Two power supplies are connected with stacks of insulated-gate bipolar transistors,and sequentially operated to generate positive and negative CS currents.This bipolar power-supply system is controlled via a field-programmable gate array,which guarantees the safety of the entire system operation.The new OH system,assisted by electron cyclotron heating,enables the stable generation of plasma currents exceeding 100 k A.Moreover,the achieved electron density over the wide range in the major radial direction exceeds the cut-off density for one of the highpower microwave sources in QUEST.This strategy yields target plasmas for future experiments with the electron Bernstein wave.展开更多
Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contac...Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts.The spin injection efficiency of 21%was achieved at 1.7 K.It was confirmed that the thin Schottky barrier formed between the heavily ndoped GaN and Co was conducive to the direct spin tunneling,by reducing the spin scattering relaxation through the interface states.展开更多
The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the...The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the sidewall of the trench beside the top cathode.The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit(FOM)value.In addition,the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage.With the optimal parameters of device structure,a high Baliga's FOM value of 2.28 GW/cm^(2) is designed.Therefore,the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.展开更多
Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the ver...Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the vertical Schottky barrier diode(SBD)based onβ-Ga_(2)O_(3) has reached 5.45 MV/cm,and no device in any material has measured a greater before.However,the high electric field of theβ-Ga_(2)O_(3) SBD makes it challenging to manage the electric field distribution and leakage current.Here,we showβ-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings(FFRs).For the central anode,we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device.For the anode edge,experimental results have demonstrated that the produced NiO/β-Ga_(2)O_(3) heterojunction FFRs enable the spreading of the depletion region,thereby mitigating the crowding effect of electric fields at the anode edge.Additionally,simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field.This work verified the feasibility of the heterojunction FFRs inβ-Ga_(2)O_(3) devices based on the experimental findings and provided ideas for managing the electric field ofβ-Ga_(2)O_(3) SBD.展开更多
A vertical junction barrier Schottky diode with a high-K/low-K compound dielectric structure is proposed and optimized to achieve a high breakdown voltage(BV).There is a discontinuity of the electric field at the inte...A vertical junction barrier Schottky diode with a high-K/low-K compound dielectric structure is proposed and optimized to achieve a high breakdown voltage(BV).There is a discontinuity of the electric field at the interface of high-K and low-K layers due to the different dielectric constants of high-K and low-K dielectric layers.A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode(JBS),so the distribution of electric field in JBS becomes more uniform.At the same time,the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-K dielectric layer and an enhancement of breakdown voltage can be achieved.Numerical simulations demonstrate that GaN JBS with a specific on-resistance(R_(on,sp)) of 2.07 mΩ·cm^(2) and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure,resulting in a high figure-of-merit(FOM) of 8.6 GW/cm^(2),and a low turn-on voltage of 0.6 V.展开更多
Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrat...Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrathin CIGSe solar cells with a Schottky back contact. In this work, theoretical explorations were conducted to study how the two contradictory electrical effects impact cell performance. For ultrathin CIGSe solar cells with a pronounced Schottky potential barrier(E_(h)> 0.2 eV), back interface passivation produces diverse performance evolution trends, which are highly dependent on cell structures and properties. Since a back Ga grading can screen the effect of reduced recombination of photogenerated electrons from back interface passivation, the hole blocking effect predominates and back interface passivation is not desirable. However, when the back Schottky diode merges with the main pn junction due to a reduced absorber thickness,the back potential barrier and the hole blocking effect is much reduced on this occasion. Consequently, cells exhibit the same efficiency evolution trend as ones with an Ohmic contact, where back interface passivation is always advantageous.The discoveries imply the complexity of back interface passivation and provide guidance to manipulate back interface for ultrathin CIGSe solar on TCOs with a pronounced Schottky back contact.展开更多
A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in thi...A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper.Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer,by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified.The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area.Compared with the normal structure,the grading coefficient M increases from 0.47 to 0.52,and the capacitance modulation ratio(C^(max)/C_(min))increases from 6.70 to 7.61.The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge.A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35%compared to that 30%of a normal SBD.展开更多
A method to improve the surge current capability of silicon carbide(SiC)merged PiN Schottky(MPS)diodes is presented and investigated via three-dimensional electro-thermal simulations.When compared with a conventional ...A method to improve the surge current capability of silicon carbide(SiC)merged PiN Schottky(MPS)diodes is presented and investigated via three-dimensional electro-thermal simulations.When compared with a conventional MPS diode,the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+surface,which can avoid the formation of local hotspots during the surge process.The Silvaco simulation results show that the proposed structure has a 20.29%higher surge capability and a 15.06%higher surge energy compared with a conventional MPS diode.The bipolar on-state voltage of the proposed structure is 4.69 V,which is 56.29%lower than that of a conventional MPS diode,enabling the device to enter the bipolar mode earlier during the surge process.Furthermore,the proposed structure can suppress the occurrence of‘snapback'phenomena when switching from the unipolar to the bipolar operation mode.In addition,an analysis of the surge process of MPS diodes is carried out in detail.展开更多
β-Ga_(2)O_(3) Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications.This paper reviews state-of-the-art β-Ga_(2)O_(3) rectifier technologies,including ad...β-Ga_(2)O_(3) Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications.This paper reviews state-of-the-art β-Ga_(2)O_(3) rectifier technologies,including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect.Characteristic device properties including onresistance,breakdown voltage,rectification ratio,dynamic switching,and nonideal effects are summarized for the different devices.Notable results on the high-temperature resilience of β-Ga_(2)O_(3) Schottky diodes,together with the enabling thermal packaging solutions,are also presented.展开更多
In this paper, we present the design of a 285 GHz tripler realized by planar Schottky diode. The complete multiplying circuit and diodes is mounted on 50 um thick quartz substrate. The measured result shows that outpu...In this paper, we present the design of a 285 GHz tripler realized by planar Schottky diode. The complete multiplying circuit and diodes is mounted on 50 um thick quartz substrate. The measured result shows that output power is achieved above 3.1 dBm in the range from 280 GHz to 290 GHz with a constantly 20 dBm driven power across the band. The peak power is 4 dBm in 285.6 GHz. .展开更多
This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting ...This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3608601).
文摘The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.
基金This work was supported by the National Key R&D Program of China(Nos.2022YFB3605205,2021YFB3601000,and 2021YFB3601002)the National Natural Science Foundation of China(Nos.U22A20134,62074069,62104078,and 62104079)the Science and Technology Developing Project of Jilin Province(Nos.20220201065GX,20230101053JC,and 20220101119JC).
文摘A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density and mobility are mini-mally affected by device scaling.However,the Schottky barrier height(SBH)of N-polarity GaN is low.This leads to a large gate leakage in N-polarity GaN-based HEMTs.In this work,we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes(SBDs)with Ni/Au electrodes.Our results show that the annealing time and tem-perature have a large influence on the electrical properties of N-polarity GaN SBDs.Compared to the N-polarity SBD without annealing,the SBH and rectification ratio at±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700,respec-tively,and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process.Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the inter-face state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emis-sion from the trap state at low reverse bias.
基金Projects supported by the National Natural Science Foundation of China (Grant Nos.61874084,61974119,and U21A20501)。
文摘The formation of low-resistance Ohmic contacts in Ga_(2)O_(3) is crucial for high-performance electronic devices. Conventionally, a titanium/gold(Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulting in mutual diffusion of atoms at the interface. However, the specific role of diffusing elements in Ohmic contact formation remains unclear.In this work, we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga_(2)O_(3). We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural characterizations.Using density functional theory, we construct a model of the interface and calculate the charge density, partial density of states, planar electrostatic potential energy, and I–V characteristics. Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier, leading to low-resistance Ohmic contacts in Ga_(2)O_(3). These findings provide valuable insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga_(2)O_(3)-based electronic devices.
基金supported by BUPT Excellent Ph.D. Students Foundation (CX2023301)in part by the National Natural Science Foundation of China (62204019)
文摘The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.
基金Project supported by the Key-Area Research and Development Program of Guangdong Province(Grant No.2020B0101690001)the National Natural Science Foundation of China(NSFC)(Grant No.51972135).
文摘Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral results confirm that a relatively higher boron concentration(~1.1×10^(21) cm^(-3))is detected on the HPDG with respect to the SCD region(~5.4×10^(20) cm^(-3)).It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination.The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination,which means that the HPDGs provide a leakage path to form an ohmic contact.There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions.The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.
基金the financial supports from the National Natural Science Foundation of China(No.:22002146)Taishan Scholars Foundation of Shandong province(No.:tsqn201909058).
文摘Establishing highly effective charge transfer channels in carbon nitride(g-C_(3)N_(4)) to enhance its photocatalytic activity is still a challenging issue.Herein,the delaminated 2D Ti_(3)C_(2) MXene nanosheets were employed to decorate the P-doped tubular g-C_(3)N_(4)(PTCN)for engineering 1D/2D Schottky heterojunction(PTCN/TC)through electrostatic self-assembly.The optimized PTCN/TC exhibited the highest hydrogen evolution rate(565 μmol h^(-1)g^(-1)),which was 4.3 and 2.0-fold higher than pristine bulk g-C_(3)N_(4) and PTCN,respectively.Such enhancement may be primarily attributed to the phosphorus heteroatom doped and unique structure of 1D/2D g-C_(3)N_(4)/Ti_(3)C_(2) Schottky heterojunction,enhancing the light-harvesting and charges’separation.One-dimensional pathway of g-C_(3)N_(4) tube and built-in electric field of interfacial Schottky effect can significantly facilitate the spatial separation of photogenerated charge carriers,and simultaneously inhibit their recombination via Schottky barrier.In this composite,metallic Ti_(3)C_(2) was served as electrons sink and photons collector.Moreover,ultrathin Ti_(3)C_(2) flake with exposed terminal metal sites as a co-catalyst exhibited higher photocatalytic reactivity in H2 evolution compared to carbon materials(such as reduced graphene oxide).This work not only proposed the mechanism of tubular g-C_(3)N_(4)/Ti_(3)C_(2) Schottky junction in photocatalysis,but also provided a feasible way to load ultrathin Ti_(3)C_(2) as a co-catalyst for designing highly efficient photocatalysts.
基金supported by National Natural Science Foundation of China(Nos.21971143 and 21805165)the Hubei Provincial Department of Education(D20201207)and 111 Project(D20015).
文摘Photocatalytic water splitting on noble metal-free photocatalysts for H_(2) generation is a promising but challenging approach to realize solar-to-chemical energy conversion.In this study,Mo/Mo_(2)C nanoparticles anchored carbon layer(Mo/Mo_(2)C@C)was obtained by a one-step in-situ phase transition approach and developed for the first time as a photothermal cocatalyst to enhance the activity of ZnIn_(2)S_(4)photocatalyst.Mo/Mo_(2)C@C nanosheet exhibits strong absorption in the full spectrum region and excellent photo-thermal conversion ability,which generates heat to improve the reaction temperature and accelerate the reaction kinetics.Moreover,metallic Mo/Mo_(2)C@C couples with ZnIn_(2)S_(4)to form ZnIn_(2)S_(4)-Mo/Mo_(2)C@C Schottky junction(denoted as ZMM),which prevents the electrons back transfer and restrains the charge recombination.In addition,conductive carbon with strong interfacial interaction serves as a fast charge transport bridge.Consequently,the optimized ZMM-0.2 junction exhibits an H2 evolution rate of 1031.07μmol g^(-1)h^-(1),which is 41 and 4.3 times higher than bare ZnIn_(2)S_(4)and ZnIn_(2)S_(4)-Mo2C,respectively.By designing novel photothermal cocatalysts,our work will provide a new guidance for designing efficient photocatalysts.
基金supported by the NIFS Bilateral Collaboration Research Program(Nos.NIFS19-KUTR136,NIFS22KUTR169)Grant-in-Aid for Scientific Research(C)(No.21K03510)Collaborative Research Program of the RIAM in Kyushu University。
文摘A power-supply system was developed for Ohmic heating(OH)to double×10^(18)the amount of change magnetic flux in the primary central solenoid(CS)on the QUEST spherical tokamak.Two power supplies are connected with stacks of insulated-gate bipolar transistors,and sequentially operated to generate positive and negative CS currents.This bipolar power-supply system is controlled via a field-programmable gate array,which guarantees the safety of the entire system operation.The new OH system,assisted by electron cyclotron heating,enables the stable generation of plasma currents exceeding 100 k A.Moreover,the achieved electron density over the wide range in the major radial direction exceeds the cut-off density for one of the highpower microwave sources in QUEST.This strategy yields target plasmas for future experiments with the electron Bernstein wave.
基金This work was supported by the National Key Research and Development Program of China(Nos.2022YFB3605604,and 2018YFE0125700)the National Natural Science Foundation of China(Nos.62225402,61927806,62234001,and U22A2074).The authors are grateful for the technical support for Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO),Chinese Academy of Sciences.
文摘Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts.The spin injection efficiency of 21%was achieved at 1.7 K.It was confirmed that the thin Schottky barrier formed between the heavily ndoped GaN and Co was conducive to the direct spin tunneling,by reducing the spin scattering relaxation through the interface states.
基金Project supported by the Key Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001)the Natural Science Foundation of Sichuan Province,China(Grant No.2022NSFSC0886)the Open Project of State Key Laboratory of Superhard Materials,Jilin Province,China(Grant No.202314)。
文摘The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the sidewall of the trench beside the top cathode.The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit(FOM)value.In addition,the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage.With the optimal parameters of device structure,a high Baliga's FOM value of 2.28 GW/cm^(2) is designed.Therefore,the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61925110,U20A20207,62004184,62004186,and 62234007)the Key-Area Research and Development Program of Guangdong Province (Grant No.2020B010174002)+3 种基金the funding support from University of Science and Technology of China (USTC) (Grant Nos.YD2100002009 and YD2100002010)the Fundamental Research Plan (Grant No.JCKY2020110B010)Collaborative Innovation Program of Hefei Science Center,Chinese Academy of Sciences (Grant No.2022HSC-CIP024)the Opening Project of and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS。
文摘Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the vertical Schottky barrier diode(SBD)based onβ-Ga_(2)O_(3) has reached 5.45 MV/cm,and no device in any material has measured a greater before.However,the high electric field of theβ-Ga_(2)O_(3) SBD makes it challenging to manage the electric field distribution and leakage current.Here,we showβ-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings(FFRs).For the central anode,we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device.For the anode edge,experimental results have demonstrated that the produced NiO/β-Ga_(2)O_(3) heterojunction FFRs enable the spreading of the depletion region,thereby mitigating the crowding effect of electric fields at the anode edge.Additionally,simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field.This work verified the feasibility of the heterojunction FFRs inβ-Ga_(2)O_(3) devices based on the experimental findings and provided ideas for managing the electric field ofβ-Ga_(2)O_(3) SBD.
基金Project supported by the National Natural Science Foundation of China (Grant No.61376078)the Natural Science Foundation of Sichuan Province,China (Grant No.2022NSFSC0515)。
文摘A vertical junction barrier Schottky diode with a high-K/low-K compound dielectric structure is proposed and optimized to achieve a high breakdown voltage(BV).There is a discontinuity of the electric field at the interface of high-K and low-K layers due to the different dielectric constants of high-K and low-K dielectric layers.A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode(JBS),so the distribution of electric field in JBS becomes more uniform.At the same time,the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-K dielectric layer and an enhancement of breakdown voltage can be achieved.Numerical simulations demonstrate that GaN JBS with a specific on-resistance(R_(on,sp)) of 2.07 mΩ·cm^(2) and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure,resulting in a high figure-of-merit(FOM) of 8.6 GW/cm^(2),and a low turn-on voltage of 0.6 V.
基金Project supported by the National Natural Science Foundation of China (Grant No. 51802240)。
文摘Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrathin CIGSe solar cells with a Schottky back contact. In this work, theoretical explorations were conducted to study how the two contradictory electrical effects impact cell performance. For ultrathin CIGSe solar cells with a pronounced Schottky potential barrier(E_(h)> 0.2 eV), back interface passivation produces diverse performance evolution trends, which are highly dependent on cell structures and properties. Since a back Ga grading can screen the effect of reduced recombination of photogenerated electrons from back interface passivation, the hole blocking effect predominates and back interface passivation is not desirable. However, when the back Schottky diode merges with the main pn junction due to a reduced absorber thickness,the back potential barrier and the hole blocking effect is much reduced on this occasion. Consequently, cells exhibit the same efficiency evolution trend as ones with an Ohmic contact, where back interface passivation is always advantageous.The discoveries imply the complexity of back interface passivation and provide guidance to manipulate back interface for ultrathin CIGSe solar on TCOs with a pronounced Schottky back contact.
基金Project supported by the National Natural Science Foundation of China (Grant No.61871072)。
文摘A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper.Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer,by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified.The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area.Compared with the normal structure,the grading coefficient M increases from 0.47 to 0.52,and the capacitance modulation ratio(C^(max)/C_(min))increases from 6.70 to 7.61.The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge.A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35%compared to that 30%of a normal SBD.
基金the National Research and Development Program for Major Research Instruments of China(Grant No.62027814)the National Natural Science Foundation of China(Grant No.61904045)Zhejiang Provincial Natural Science Foundation of China(Grant No.LQ20F040004)。
文摘A method to improve the surge current capability of silicon carbide(SiC)merged PiN Schottky(MPS)diodes is presented and investigated via three-dimensional electro-thermal simulations.When compared with a conventional MPS diode,the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+surface,which can avoid the formation of local hotspots during the surge process.The Silvaco simulation results show that the proposed structure has a 20.29%higher surge capability and a 15.06%higher surge energy compared with a conventional MPS diode.The bipolar on-state voltage of the proposed structure is 4.69 V,which is 56.29%lower than that of a conventional MPS diode,enabling the device to enter the bipolar mode earlier during the surge process.Furthermore,the proposed structure can suppress the occurrence of‘snapback'phenomena when switching from the unipolar to the bipolar operation mode.In addition,an analysis of the surge process of MPS diodes is carried out in detail.
文摘β-Ga_(2)O_(3) Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications.This paper reviews state-of-the-art β-Ga_(2)O_(3) rectifier technologies,including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect.Characteristic device properties including onresistance,breakdown voltage,rectification ratio,dynamic switching,and nonideal effects are summarized for the different devices.Notable results on the high-temperature resilience of β-Ga_(2)O_(3) Schottky diodes,together with the enabling thermal packaging solutions,are also presented.
文摘In this paper, we present the design of a 285 GHz tripler realized by planar Schottky diode. The complete multiplying circuit and diodes is mounted on 50 um thick quartz substrate. The measured result shows that output power is achieved above 3.1 dBm in the range from 280 GHz to 290 GHz with a constantly 20 dBm driven power across the band. The peak power is 4 dBm in 285.6 GHz. .
基金the Fundamental Research Funds for the National Key Research and Development Project of China(Grant No.2020YFB1807403)the National Natural Science Foundation of China(Grant Nos.62174125 and 62131014)+1 种基金the Fundamental Research Funds for the Central Universities(Grant Nos.QTZX22022 and YJS2213)the Innovation Fund of Xidian University.
文摘This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.