High-intensity spatial-mode steerable frequency up-converter toward on-chip integration

Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domains without disturbing their quantum properties,nonlinear frequency conversion,typically steered with the quadratic(χ2)process,should be considered.Furthermore,another degree of freedom in steering the spatial modes during theχ2 process,with unprecedent mode intensity is proposed here by modulating the lithium niobate(LN)waveguide-based inter-mode quasi-phasematching conditions with both temperature and wavelength parameters.Under high incident light intensities(25 and 27.8 dBm for the pump and the signal lights,respectively),mode conversion at the sum-frequency wavelength with sufficient high output power(−7–8 dBm)among the TM01,TM10,and TM00 modes is realized automatically with characterized broad temperature(ΔT≥8°C)and wavelength windows(Δλ≥1 nm),avoiding the previous efforts in carefully preparing the signal or pump modes.The results prove that high-intensity spatial modes can be prepared at arbitrary transparent wavelength of theχ2 media toward on-chip integration,which facilitates the development of chip-based communication and quantum information systems because spatial correlations can be applied to generate hyperentangled states and provide additional robustness in quantum error correction with the extended Hilbert space.

Pixelated non-volatile programmable photonic integrated circuits with 20-level intermediate states

Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this paper,we propose pixelated programmable Si_(3)N_(4)PICs with record-high 20-level intermediate states at 785 nm wavelength.Such flexibility in phase or amplitude modulation is achieved by a programmable Sb_(2)S_(3)matrix,the footprint of whose elements can be as small as 1.2μm,limited only by the optical diffraction limit of anin-house developed pulsed laser writing system.We believe our work lays the foundation for laser-writing ultra-high-level(20 levels and even more)programmable photonic systems and metasurfaces based on phase change materials,which could catalyze diverse applications such as programmable neuromorphic photonics,biosensing,optical computing,photonic quantum computing,and reconfigurable metasurfaces.

Photonic integrated neuro-synaptic core for convolutional spiking neural network

Neuromorphic photonic computing has emerged as a competitive computing paradigm to overcome the bottlenecks of the von-Neumann architecture.Linear weighting and nonlinear spike activation are two fundamental functions of a photonic spiking neural network(PSNN).However,they are separately implemented with different photonic materials and devices,hindering the large-scale integration of PSNN.Here,we propose,fabricate and experimentally demonstrate a photonic neuro-synaptic chip enabling the simultaneous implementation of linear weighting and nonlinear spike activation based on a distributed feedback(DFB)laser with a saturable absorber(DFB-SA).A prototypical system is experimentally constructed to demonstrate the parallel weighted function and nonlinear spike activation.Furthermore,a fourchannel DFB-SA laser array is fabricated for realizing matrix convolution of a spiking convolutional neural network,achieving a recognition accuracy of 87%for the MNIST dataset.The fabricated neuro-synaptic chip offers a fundamental building block to construct the large-scale integrated PSNN chip.

Hybrid material integration in silicon photonic integrated circuits

Hybrid integration ofⅢ-Ⅴand ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits(PICs).Bonding and transfer printing have been the popular approaches for integration of III–V gain media with silicon PICs.Similar approaches are also being considered for ferroelectrics to enable larger RF modulation bandwidths,higher linearity,lower optical loss integrated optical modulators on chip.In this paper,we review existing integration strategies ofⅢ-Ⅴmaterials and present a route towards hybrid integration of bothⅢ-Ⅴand ferroelectrics on the same chip.We show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media,similar to approaches adopted to maximize optical overlap with the gain section,thereby reducing lasing thresholds for hybridⅢ-Ⅴintegration with silicon PICs.Preliminary designs are presented to enable a foundry compatible hybrid integration route of diverse functionalities on silicon PICs.

Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics

Integrated circuit(IC)industry has fully considered the fact that the Moore’s Law is slowing down or ending.Alternative solutions are highly and urgently desired to break the physical size limits in the More-than-Moore era.Integrated silicon photonics technology exhibits distinguished potential to achieve faster operation speed,less power dissipation,and lower cost in IC industry,because their COMS compatibility,fast response,and high monolithic integration capability.Particularly,compared with other on-chip resonators(e.g.microrings,2D photonic crystal cavities)silicon-on-insulator(SOI)-based photonic crystal nanobeam cavity(PCNC)has emerged as a promising platform for on-chip integration,due to their attractive properties of ultra-high Q/V,ultra-compact footprints and convenient integration with silicon bus-waveguides.In this paper,we present a comprehensive review on recent progress of on-chip PCNC devices for lasing,modulation,switching/filting and label-free sensing,etc.

An advanced Ⅲ-Ⅴ-on-silicon photonic integration platform

In many application scenarios,silicon(Si)photonics favors the integration of Ⅲ-Ⅴ gain material onto Si substrate to real-ize the on-chip light source.In addition to the current popular integration approaches of Ⅲ-Ⅴ-on-Si wafer bonding or dir-ect heteroepitaxial growth,a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests.High-quality Ⅲ-Ⅴ material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost,high-integration density and highly scalable active-passive photonic integra-tion on Si.This paper reviews recent research work on this regrowth on bonded template platform including template de-velopments,regrown material characterizations and laser demonstrations.The potential advantages,opportunities and challenges of this approach are discussed.

Precision photonic integration for future large-scale photonic integrated circuits

Since the proposal of the concept of photonic integratedcircuits (PICs), tremendous progress has been made. In2005, Infinera Corp. rolled out the first commercial PICs, inwhich hundreds of optical functions were integrated onto asmall form factor chip for wavelength division multiplexing(WDM) systems[1], then a monolithically integrated 10 ×10 Gb/s WDM chip has been demonstrated, the channelnumber is ten[2]. Like ICs, large-scale PICs (LS-PICs) will besure to be pursued. However, there are still some generalchallenges associated with LS-PICs. The challenges for III–V(mainly InP) PICs is the semiconductor process, which is notmature for LS-PICs. Up to now, the channel number in commercialIII–V WDM PICs by Infinera is still about ten or less.For silicon photonics, the challenge is the silicon based lightsource. The low cost and mature solution for silicon lasers isstill unavailable and only 4 × 25 Gb/s PICs are deployed byIntel Corp. after 18-year R&D investment. Thus it is still unavailablefor practical LS-PICs in the present times.

Low-loss chip-scale programmable silicon photonic processor

Chip-scale programmable optical signal processors are often used to flexibly manipulate the optical signals for satisfying the demands in various applications,such as lidar,radar,and artificial intelligence.Silicon photonics has unique advantages of ultra-high integration density as well as CMOS compatibility,and thus makes it possible to develop large-scale programmable optical signal processors.The challenge is the high silicon waveguides propagation losses and the high calibration complexity for all tuning elements due to the random phase errors.In this paper,we propose and demonstrate a programmable silicon photonic processor for the first time by introducing low-loss multimode photonic waveguide spirals and low-random-phase-error Mach-Zehnder switches.The present chip-scale programmable silicon photonic processor comprises a 1×4 variable power splitter based on cascaded Mach-Zehnder couplers(MZCs),four Ge/Si photodetectors,four channels of thermally-tunable optical delaylines.Each channel consists of a continuously-tuning phase shifter based on a waveguide spiral with a micro-heater and a digitally-tuning delayline realized with cascaded waveguide-spiral delaylines and MZSs for 5.68 ps time-delay step.Particularly,these waveguide spirals used here are designed to be as wide as 2μm,enabling an ultralow propagation loss of 0.28 dB/cm.Meanwhile,these MZCs and MZSs are designed with 2-μm-wide arm waveguides,and thus the random phase errors in the MZC/MZS arms are negligible,in which case the calibration for these MZSs/MZCs becomes easy and furthermore the power consumption for compensating the phase errors can be reduced greatly.Finally,this programmable silicon photonic processor is demonstrated successfully to verify a number of distinctively different functionalities,including tunable time-delay,microwave photonic beamforming,arbitrary optical signal filtering,and arbitrary waveform generation.

High performance integrated photonic circuit based on inverse design method

The basic indexes of all-optical integrated photonic circuits include high-density integration,ultrafast response and ultralow energy consumption.Traditional methods mainly adopt conventional micro/nano-structures.The overall size of the circuit is large,usually reaches hundreds of microns.Besides,it is difficult to balance the ultrafast response and ultra-low energy consumption problem,and the crosstalk between two traditional devices is difficult to overcome.Here,we propose and experimentally demonstrate an approach based on inverse design method to realize a high-density,ultrafast and ultra-low energy consumption integrated photonic circuit with two all-optical switches controlling the input states of an all-optical XOR logic gate.The feature size of the whole circuit is only 2.5μm×7μm,and that of a single device is 2μm×2μm.The distance between two adjacent devices is as small as 1.5μm,within wavelength magnitude scale.Theoretical response time of the circuit is 150 fs,and the threshold energy is within 10 fJ/bit.We have also considered the crosstalk problem.The circuit also realizes a function of identifying two-digit logic signal results.Our work provides a new idea for the design of ultrafast,ultra-low energy consumption all-optical devices and the implementation of high-density photonic integrated circuits.

Fundamentals and applications of photonic waveguides with bound states in the continuum

Photonic waveguides are the most fundamental element for photonic integrated circuits(PICs).Waveguide properties,such as propagation loss,modal areas,nonlinear coefficients,etc.,directly determine the functionalities and performance of PICs.Recently,the emerging waveguides with bound states in the continuum(BICs)have opened new opportunities for PICs because of their special properties in resonance and radiation.Here,we review the recent progress of PICs composed of waveguides with BICs.First,fundamentals including background physics and design rules of a BIC-based waveguide will be introduced.Next,two types of BIC-based waveguide structures,including shallowly etched dielectric and hybrid waveguides,will be presented.Lastly,the challenges and opportunities of PICs with BICs will be discussed.

Ultrahigh-resolution on-chip spectrometer with silicon photonic resonators

A compact spectrometer on silicon is proposed and demonstrated with an ultrahigh resolution.It consists of a thermally-tunable ultra-high-Q resonator aiming at ultrahigh resolution and an array of wideband resonators for achieving a broadened working window.The present on-chip spectrometer has a footprint as compact as 0.35 mm^(2),and is realized with standard multi-project-wafer foundry processes.The measurement results show that the on-chip spectrometer has an ultra-high resolution Δλ of 5 pm and a wide working window of 10 nm.The dynamic range defined as the ratio of the working window and the wavelength resolution is as large as 1940,which is the largest for on-chip dispersive spectro-meters to the best of our knowledge.The present high-performance on-chip spectrometer has great potential for high-resolution spectrum measurement in the applications of gas sensing,food monitoring,health analysis,etc.

Science Letters:The Moore’s Law for photonic integrated circuits

We formulate a “Moore’s law” for photonic integrated circuits (PICs) and their spatial integration density using two methods. One is decomposing the integrated photonics devices of diverse types into equivalent basic elements, which makes a comparison with the generic elements of electronic integrated circuits more meaningful. The other is making a complex compo- nent equivalent to a series of basic elements of the same functionality, which is used to calculate the integration density for func- tional components realized with different structures. The results serve as a benchmark of the evolution of PICs and we can con- clude that the density of integration measured in this way roughly increases by a factor of 2 per year. The prospects for a continued increase of spatial integration density are discussed.

Gigahertz-rate-switchable wavefront shaping through integration of metasurfaces with photonic integrated circuit

Achieving spatiotemporal control of light at high speeds presents immense possibilities for various applications in communication,computation,metrology,and sensing.The integration of subwavelength metasurfaces and optical waveguides offers a promising approach to manipulate light across multiple degrees of freedom at high speed in compact photonic integrated circuit(PIC)devices.Here,we demonstrate a gigahertz-rate-switchable wavefront shaping by integrating metasurface,lithium niobate on insulator photonic waveguides,and electrodes within a PIC device.As proofs of concept,we showcase the generation of a focus beam with reconfigurable arbitrary polarizations,switchable focusing with lateral focal positions and focal length,orbital angular momentum light beams as well as Bessel beams.Our measurements indicate modulation speeds of up to the gigahertz rate.This integrated platform offers a versatile and efficient means of controlling the light field at high speed within a compact system,paving the way for potential applications in optical communication,computation,sensing,and imaging.

Digital synthesis of programmable photonic integrated circuits

Programmable photonic waveguide meshes can be programmed into many different circuit topologies and thereby provide a variety of functions.Due to the complexity of the signal routing in a general mesh,a particular synthesis algorithm often only accounts for a specific function with a specific cell configuration.In this paper,we try to synthesize the programmable waveguide mesh to support multiple configurations with a more general digital signal processing platform.To show the feasibility of this technique,photonic waveguide meshes in different configurations(square,triangular and hexagonal meshes)are designed to realize optical signal interleaving with arbitrary duty cycles.The digital signal processing(DSP)approach offers an effective pathway for the establishment of a general design platform for the software-defined programmable photonic integrated circuits.The use of well-developed DSP techniques and algorithms establishes a link between optical and electrical signals and makes it convenient to realize the computer-aided design of optics–electronics hybrid systems.

Optimization of a Si-SiO2 Waveguide Coupler for Photonic Integrated Circuits

In this paper, we demonstrated a compact Si-SiO2 waveguide coupler with a footprint of only 2 μm × 3 μm by topology optimization in the communication wavelength. The transmission was increased from 30% to 100%, much higher than other methods. Besides, the optimized structure did not incorporate other dielectric materials, facilitating fabrications and applications.

Photonic integrated optical phased arrays and their applications[Invited]

In recent years,optical phased arrays(OPAs)have attracted great interest for their potential applications in light detection and ranging(Li DAR),free-space optical communications(FSOs),holography,and so on.Photonic integrated circuits(PICs)provide solutions for further reducing the size,weight,power,and cost of OPAs.In this paper,we review the recent development of photonic integrated OPAs.We summarize the typical architecture of the integrated OPAs and their performance.We analyze the key components of OPAs and evaluate the figure of merit for OPAs.Various applications in Li DAR,FSO,imaging,biomedical sensing,and specialized beam generation are introduced.

Multi-channel 28-GHz millimeter-wave signal generation on a silicon photonic chip with automated polarization control

We propose and experimentally demonstrate an integrated silicon photonic scheme to generate multi-channel millimeter-wave(MMW) signals for 5 G multi-user applications. The fabricated silicon photonic chip has a footprint of 1.1 × 2.1 mm^2 and integrates 7 independent channels each having on-chip polarization control and heterodyne mixing functions. 7 channels of4-Gb/s QPSK baseband signals are delivered via a 2-km multi-core fiber(MCF) and coupled into the chip with a local oscillator(LO) light. The polarization state of each signal light is automatically adjusted and aligned with that of the LO light, and then 7 channels of 28-GHz MMW carrying 4-Gb/s QPSK signals are generated by optical heterodyne beating. Automated polarizationcontrol function of each channel is also demonstrated with ～7-ms tuning time and ～27-dB extinction ratio.

Avalanche photodiodes on silicon photonics

Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.

Towards electronic-photonic-converged thermo-optic feedback tuning

As Moore’s law approaching its end,electronics is hitting its power,bandwidth,and capacity limits.Photonics is able to overcome the performance limits of electronics but lacks practical photonic register and flexible control.Combining electronics and photonics provides the best of both worlds and is widely regarded as an important post-Moore’s direction.For stability and dynamic operations considerations,feedback tuning of photonic devices is required.For silicon photonics,the thermooptic effect is the most frequently used tuning mechanism due to the advantages of high efficiency and low loss.However,it brings new design requirements,creating new design challenges.Emerging applications,such as optical phased array,optical switches,and optical neural networks,employ a large number of photonic devices,making PCB tuning solutions no longer suitable.Electronic-photonic-converged solutions with compact footprints will play an important role in system scalability.In this paper,we present a unified model for thermo-optic feedback tuning that can be specialized to different applications,review its recent advances,and discuss its future trends.

Silicon photonics for telecom and data‐com applications

In recent decades,silicon photonics has attracted much attention in telecom and data-com areas.Constituted of high refractive-index contrast waveguides on silicon-on-insulator(SOI),a variety of integrated photonic passive and active devices have been implemented supported by excellent optical properties of silicon in the mid-infrared spectrum.The main advantage of the silicon photonics is the ability to use complementary metal oxide semiconductor(CMOS)process-compatible fabrication technologies,resulting in high-volume production at low cost.On the other hand,explosively growing traffic in the telecom,data center and high-performance computer demands the data flow to have high speed,wide bandwidth,low cost,and high energy-efficiency,as well as the photonics and electronics to be integrated for ultra-fast data transfer in networks.In practical applications,silicon photonics started with optical interconnect transceivers in the data-com first,and has been now extended to innovative applications such as multi-port optical switches in the telecom network node and integrated optical phased arrays(OPAs)in light detection and ranging(LiDAR).This paper overviews the progresses of silicon photonics from four points reflecting the recent advances mentioned above.CMOS-based silicon photonic platform technologies,applications to optical transceiver in the data-com network,applications to multi-port optical switches in the telecom network and applications to OPA in LiDAR system.