The influence of defects in a plasma photonic crystal on the characteristics of microwave transmittance

Plasma photonic crystals(PPCs) have been a hot research topic in the band gap(BG) material field in recent years due to their unique advantages, such as the feasibility of changing the parameters and hence the properties of the materials with respect to traditional photonic crystals(PCs). In this paper,we focus mainly on the effects of some types of defects introduced in PPCs on the changes in BG characteristics of microwave(MW) transmittance. The research is carried out using numerical simulation with a one-dimensional finite-difference time-domain(FDTD) method, and six types of defects, including a lattice-constant defect, radii-ratio defect, additional-column defect, column-width defect, plasma-frequency defect, and electron-collision-frequency defect, are concerned. It transpires that introducing a defect in a PPC in different manners may realize the symmetric change, alternative change, shifting, generating, transforming, disappearing, and attenuating of BGs in transmittance spectra, which has great potential for the manufacture of spatiotemporal-controllable MW materials and devices with more feasible modulating functions.

Design and Analysis of Microstrip Multi-Channeled Filter Using Photonic Crystal Branchy Defect

A multi-channeled filter based on branchy defect in a microstrip photonic crystal was proposed. By introducing a branchy structure across the defect region, multiple defect modes will appear inside the photonic gap, leading to the multi-channeled filtering phenomenon. In comparison with the conventional multi-channeled filters, the proposed structure is more compact and tunable as far as the device volume and fabrication are concerned. The microwave experiment results are found in agreement with simulation results.

Properties of single and multiple defect modes in one-dimensional photonic crystals containing left-handed metamaterials

Wave propagation is studied in structures consisting of alternate left- and right-handed layers. Bragg gap and zero-n gap appear in different frequency regions of the structure. The periodicity of the structure is broken by simply reversing the order of the layers in one half of the structure, resulting in defect modes located inside the zero-n gap and Bragg gap. These modes can be made very narrow by adding more layers in the structure. The defect mode located inside the zero-n gap is sensitive to the symmetry of the structure and insensitive to the angle of incidence of the incoming radiation. Multiple modes are also generated inside the gaps by repeating the structural pattern. Thus, a simple structure can be used for single and multiple modes that are imDortant for different applications.

One-dimensional structure made of periodic slabs of SiO2/InSb offering tunable wide band gap at terahertz frequency range

Optical features of a semiconductor–dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO2/In Sb slabs are considered as building blocks of the proposed ideal crystal. By inserting additional layers and disrupting the regularity, two more defective crystals are also proposed. Photonic band structure of the ideal crystal and its dependence on the structural parameters are explored at the first step. Transmittance of the defective crystals and its changes with the thicknesses of the layers are studied. After extracting the optimum values for the thicknesses of the unit cells of the crystals, the optical response of the proposed structures at different temperatures and incident angles are investigated. Changes of the defect layers’ induced mode(s) are discussed by taking into consideration of the temperature dependence of the In Sb layer permittivity. The results clearly reflect the high potential of the proposed crystals to be used at high temperature terahertz technology as a promising alternative to their electronic counterparts.

Omni-directional mirror for visible light based on one-dimensional photonic crystal

The omni-directional reflection characteristics of one-dimensional photonic crystals composed of Ta2O5/MgF2 multi-quantum well （MQW） are studied using the transfer matrix method. An omnidirectional reflector consisting of three and four Ta2O5/MgF2 MQWs is investigated. Results show that the photonic band gap of the photonic crystal composed of three and four Ta2O5/MgF2 MQWs, which are within the wavelength ranges of 402-712 and 412-1,023 nm, respectively, could cover the entire visible region. The relationship among the width of the band gap, its location, reflectivity rate, and incident angle of the incident light is analyzed. The optimal structural parameters of the MQW of the omni-directional reflector in the visible region are also calculated. The calculations provide a guide for the design of omni- directional reflection devices in the visible region.

Influence of incident angle on the defect mode of locally doped photonic crystal

By means of a transfer matrix method, this paper deduces the transmittance calculation equation of light travelling in locally doped （including one defect layer） mirror heterostructure （ABCCBA）PD（ABCCBA）q photonic crystals. In the cases of defect layers being either introduced or not introduced, an ORIGIN simulation shows the influence of incident angle change on the number of photon band gap, bandwidth and defect mode numbers. Studies indicate that when such photonic crystals have 8 mirror cycles and the thickness of defect layer D meets nDdD = X0/2 or nodD = 4）~0, the photonic crystal defect mode transmission peak changes significantly. Also, with the change of incident angle, the number of defect mode transmission peaks changes. By altering incident angle and defect layer thickness, we can get photon band gaps and defect mode transmission peaks at different frequency domains and different relative angular frequencies. This provides theoretical reference for achieving light wave multi-channel filtering and tunable filtering.

石墨烯三缺陷光子晶体滤波特性分析

为了优化信息光电子技术中传统滤波器的材料性能,设计了一种含石墨烯缺陷的一维光子晶体。利用新的传输矩阵推导了其光学特性,讨论了结构周期数、光入射角、介质层光学厚度等参数对透射谱的影响。仿真结果表明:石墨烯的加入对可见光有一定的吸收作用,使透射峰的高度降低;入射角增大时,透射谱中的透射峰发生蓝移;两介质层的光学厚度同时增大时,三个透射峰高度不变整体发生红移,透射峰的半高宽度随外层周期数的增大而变小,透射峰的位置随内层周期数的增大相互靠近;为三通道光子晶体滤波器的设计提供一定的理论指导。

光子晶体缺陷模的带宽与品质因子研究

利用光学传输矩阵法研究了结构参量对缺陷态光子晶体的缺陷模带宽和品质因子的影响 研究发现 ,当缺陷介质层厚度h0 的值较小时 ,缺陷模的带宽很小且基本保持不变 ;当h0 较大时 ,缺陷模的带宽随h0 的增加而快速增加 另外发现 ,缺陷模的品质因子在某个h0 处取最大值 但是总体上看 ,h0 较小时的品质因子要远大于h0 较大时的品质因子 此外 ,缺陷模的品质因子随光子晶体的周期数增加而急剧增加约 4 .788倍 ,而带宽则随周期数的增加而急剧减少约 4 .788倍 当周期数为 13时就可以获得 10 9以上的品质因子值和小于 10 -

一维光子晶体的缺陷模特性研究

利用传输矩阵法研究了缺陷层有吸收的一维光子晶体的带隙结构,在中心波长附近利用泰勒展开式的一级近似得到了缺陷模的高度和半峰全宽的计算公式.研究发现,消光系数、介质周期数和缺陷层厚度对缺陷模高度的影响较大,它们的增大均使缺陷模高度快速下降;而对半峰全宽的影响主要取决于介质的周期数,随周期数的增大缺陷模快速变窄.

一维光子晶体微谐振腔的调谐特性与品质因子

利用传输矩阵法研究了对称结构和非对称结构一维光子晶体微谐振腔的调谐特性和品质因子.研究发现:当缺陷层光学厚度增加时,缺陷模中心波长也会随着增加即向长波方向移动,微谐振腔的调谐特性与缺陷层两边介质的折射率有关;相比于对称结构,非对称结构能在较小的缺陷层光学厚度变化范围内实现较大波长范围的线性调谐;品质因子随缺陷层厚度的增加先增大后减小,在缺陷模中心波长为λ0时可达最大值;高低折射率介质层的排布对微谐振腔品质因子有影响.

光子晶体缺陷模的偏振特性研究

为了了解光波在一维光子晶体的传输特性,利用传输矩阵方法进行了数值模拟,并研究了缺陷层厚度对缺陷模偏振特性的影响。结果表明,入射角的变化对光子晶体的禁带及缺陷模影响较大,它们都随入射角的增大向高频(短波)方向移动,s偏振的禁带宽度逐渐增宽而p偏振的禁带宽度变化不明显,p偏振的缺陷模频移较s偏振的稍大。随着入射角的增大,s偏振的缺陷模越来越细、品质因子逐渐增大,而p偏振的缺陷模变化趋势则刚好相反。

缺陷态透射率可调的三缺陷层的一维光子晶体

利用传输矩阵方法,从理论上研究了三缺陷层一维光子晶体的光学性质.在缺陷层间距足够大以致于出现缺陷态简并的情况下,调节第一或第三个缺陷层的光学厚度,光子晶体缺陷态的透射率会发生最大程度的变化.这种结构可同时具有窄带滤波器和光开关的功能,据此提出了一种低阈值光开关的设计.把折射率可调的向列型液晶作为晶体的第三个缺陷层,并用4×4传输矩阵方法计算了其缺陷态透射率与电场电压的关系.

可见光波段SiO_2/CdSe一维光子晶体及缺陷模的研究

采用SiO_2/CdSe构建了可见光波段一维光子晶体结构,并在其中引入LiTaO_3缺陷层。利用传输矩阵法,分析了电磁波在无缺陷与含LiTaO_3缺陷层两种光子晶体中的带隙结构,研究了缺陷层参量对光子晶体可见光波段带隙结构的影响规律。计算结果表明:LiTaO_3的引入,有利于带隙宽度的增加,调整缺陷层结构参量,缺陷模的位置可在不同颜色区域出现,如红光、黄光等缺陷模。该结构有望用于制作可见光波段的滤波器。

缺陷对光子晶体透射能带谱的简并效应研究

为了设计高品质、高性能的光学滤波器和光开关,利用传输矩阵法通过数值计算模拟的方式绘制1维光子晶体的透射能带谱,研究和分析了两缺陷之间距离和缺陷的厚度对光子晶体透射能带谱的简并效应。结果表明,当两缺陷之间距离越大,透射能带谱简并效应越明显,当间距增大到一定数值时,出现分立透射峰完全简并现象;当缺陷厚度整数倍增大时,光子晶体透射能带谱出现简并的趋势,但缺陷厚度奇数倍增大与偶数倍增大时,透射能带谱简并速度不一样,前者的简并速度小于后者的简并速度;缺陷厚度无论是奇数倍增大还是偶数倍增大,光子晶体透射能带谱简并的速度均逐渐减小。缺陷对光子晶体透射能带谱简并效应的调制规律,为光子晶体设计新型光学滤波器件、光学开关及其调制机制等提供了指导。

可调缺陷层等离子体光子晶体的滤波特性分析

等离子体光子晶体中引入另一种缺陷等离子体层,构成一种新的等离子体光子晶体滤波器。在不需改变等离子体光子晶体几何外形尺寸的情况下,通过改变缺陷等离子体层的参数,实现缺陷等离子体等效折射率改变,使等离子体光子晶体缺陷层的谐振频率发生偏移,实现了滤波器的可调谐特性。数值模拟中采用时域有限差分算法,计算了电磁波通过等离子体光子晶体的透射谱。结果表明通过调控缺陷层等离子体参数,使缺陷层的谐振频率发生偏移,从而实现等离子体光子晶体可调滤波特性。

一维平板掺杂光子晶体的滤波特性

利用电磁波在一维平板掺杂光子晶体中横向受限的条件,推导出电磁波在一维平板掺杂光子晶体中各个模式满足的关系式。研究了TE波和TM波各模式的缺陷模随模式量子数和杂质光学厚度的变化规律。利用缺陷模随模式量子数的变化规律可以实现多通道滤波,利用缺陷模随杂质光学厚度的变化规律可以实现调谐滤波。

平板掺杂光子晶体中电磁波的缺陷模

为了研究1维平板掺杂光子晶体中电磁波的模式及其缺陷模特性,推导出1维平板掺杂光子晶体中电磁波的各个模式满足的条件,利用特征矩阵法计算出TE波和TM波各模式的缺陷模随模式量子数和平板厚度的变化规律,得出了一些不同于1维非受限掺杂光子晶体缺陷模的新特征。结果表明,电磁波的模式由模式量子数确定,缺陷模与模式量子数和平板厚度有关。

温度、密度对磁化等离子体光子晶体缺陷模的影响

采用等温近似,用磁化等离子体的分段线形电流密度卷积(Piecewise Linear Current Density Recursive Convolution,PLCDRC)时域有限差分(Finite-differentce Time-domain,FDTD)算法研究了具有单一缺陷层的一维磁化等离子体光子晶体的缺陷模特性;以高斯脉冲为激励源,用算法公式计算所得的电磁波透射系数,讨论了温度和等离子体层密度对其缺陷模的影响。结果表明:改变温度和等离子体层密度可以获得不同的缺陷模。

采用含掺杂半导体光子晶体的太赫兹梳状滤波器

用a介质（n型掺杂GaAs）和b介质（TiO2）组成一含缺陷层的光子晶体。数值计算表明：此光子晶体在3．0—4．5THz范围内出现了5个透射率为1的缺陷模，这些缺陷模有如下特征：当n型掺杂GaAs的掺杂浓度n由10^17／cm^3增加到10^19／cm^3时，缺陷模的中心、半峰全宽度和透射率均保持不变，但若n增至10^20／cm^3，则缺陷模的透射率开始下降。入射角增加，缺陷模的透射率保持不变，但其中心发生蓝移，移动率为变量，且半峰全宽度变窄。a、b两介质或缺陷层C的几何厚度分别增加时，缺陷模的透射率和半峰全宽度分别保持不变，中心位置红移。这些现象为此类光子晶体实现太赫兹频段的梳状滤波提供了理论指导。

非均匀分布等离子体光子晶体光子带隙分析

用时域有限差分法研究了电磁波在等离子体光子晶体中的传播特性。数值模拟中使用完全匹配层吸收边界条件,计算了电磁波通过等离子体光子晶体的反射和透射系数。讨论了等离子体密度、等离子体温度、介电常数比和引入缺陷层对等离子体光子晶体光子带隙的影响。