Nonlinear optical rectification of GaAs/Ga_(1-x)Al_(x)As quantum dots with Hulthén plus Hellmann confining potential

We investigate the nonlinear optical rectification(NOR) of spherical quantum dots(QDs) under Hulthén plus Hellmann confining potential with the external tuning elements. Energy and wavefunction are determined by using the Nikiforov–Uvarov method. Expression for the NOR coefficient is derived by the density matrix theory. The results show that the applied external elements and internal parameters of this system have a strong influence on intraband nonlinear optical properties. It is hopeful that this tuning of the nonlinear optical properties of GaAs/Ga_(1-x)Al_(x)As QDs can make a greater contribution to preparation of new functional optical devices.

Polaron effect on the optical rectification in spherical quantum dots with electric field

The polaron effect on the optical rectification in spherical quantum dots with a shallow hydrogenic impurity in the presence of electric field is theoretically investigated by taking into account the interactions of the electrons with both confined and surface optical phonons. Besides, the interaction between impurity and phonons is also considered. Numerical calculations are presented for typical Zn1-xCdxSe/ZnSe material. It is found that the polaronic effect or electric field leads to the redshifted resonant peaks of the optical rectification coefficients. It is also found that the peak values of the optical rectification coefficients with the polaronic effect are larger than without the polaronic effect, especially for smaller Cd concentrations or stronger electric field.

Optical rectification in 4H-SiC:paving the way to generate strong terahertz fields with ultra-wide bandwidth

The 4H-SiC crystal is found to have great potential in terahertz generation via nonlinear optical frequency conversion due to its extremely high optical damage threshold,wide transparent range,etc.In this paper,optical rectification(OR)with tilted-pulse-front(TPF)setting based on the 4H-SiC crystal is proposed.The theory accounts for the optimization of incident pulse pre-chirping in the TPF OR process under high-intensity femtosecond laser pumping.Compared with the currently recognized LiNbO3-based TPF OR,which generates a single-cycle terahertz pulse within 3 THz,4HSiC demonstrates a significant advantage in producing ultra-widely tunable(up to over 14 THz,TPF angle 31◦–38◦)terahertz waves with high efficiency(~10–2)and strong field(~MV/cm).Besides,the spectrum characteristics,as well as the evolution from single-to multi-cycle terahertz pulses can be modulated flexibly by pre-chirping.The simulation results show that 4H-SiC enables terahertz frequency extending to an unprecedent range by OR,which has extremely important potential in strong-field terahertz applications.

Spherical quantum dot in modified Kratzer-Coulomb potential:study of optical rectification coefficients

We consider the effects of quantum dot radius,confinement potential depth and controllable effective mass on the optical rectification coefficient(ORC)in spherical quantum dots,which is confined with Modified Kratzer-Coulomb Potential(MKCP).Using the Nikiforov-Uvarov method and compact density matrix theory,the ground state energy,ORC and wave function of electrons under the combined action of many factors are calculated.The results show that they affect the optical rectification response from different angles,including the position of peak and formant.

Optical rectification in surface layers of germanium

In this Letter, we have demonstrated significant electric field induced（EFI） optical rectification（OR） effects existing in the surface layers of germanium（Ge） and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the twoe-order susceptibility components χ2 effTzzz∕χe2 effTeffective secondzxxfor Ge（001）, Ge（110）, and Ge（111） surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.

Second-harmonic generation in asymmetric quantum dots in the presence of a static magnetic field

The second-harmonic generation （SHG） coefficient in an asymmetric quantum dot （QD） with a static magnetic field is theoretically investigated. Within the framework of the effective-mass approximation, we obtain the confined wave functions and energies of electrons in the QD. We also obtain the SHC coefficient by the compact-density-matrix approach and the iterative method. The numerical results for the typical GaAs/AlGaAs QD show that the SHC coefficient depends strongly on the magnitude of magnetic field, parameters of the asymmetric potential and the radius of the QD. The resonant peak shifts with the magnetic field or the radius of the QD changing.

Choice of optimal crystal-orientation for terahertz transceiver with zincblende crystal

This paper presents a set of equations describing the terahertz generation and electro-optic detection based on optical rectification in zincblende crystals. The dependence of terahertz emission efficiency on the polarization of incident beam and crystal-orientation is discussed. For the experimental setup with a transceiver which transmits and detects terahertz radiation in the same crystal, we have demonstrated the optimal combination of both parameters above to optimize the working efficiency. Equations supplied in this paper are valid for zincblende crystals with arbitrary crystal- orientation and every possible polarization of an incident beam, which are of great significance for the optimization of a system.

Optically pumped terahertz sources

High-power terahertz(THz) generation in the frequency range of 0.1-10 THz has been a fast-developing research area ever since the beginning of the THz boom two decades ago, enabling new technological breakthroughs in spectroscopy, communication, imaging,etc. By using optical(laser) pumping methods with near-or mid-infrared(IR) lasers, flexible and practical THz sources covering the whole THz range can be realized to overcome the shortage of electronic THz sources and now they are playing important roles in THz science and technology. This paper overviews various optically pumped THz sources, including femtosecond laser based ultrafast broadband THz generation, monochromatic widely tunable THz generation, single-mode on-chip THz source from photomixing, and the traditional powerful THz gas lasers. Full descriptions from basic principles to the latest progress are presented and their advantages and disadvantages are discussed as well. It is expected that this review gives a comprehensive reference to researchers in this area and additionally helps newcomers to quickly gain understanding of optically pumped THz sources.