Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were investigated.The optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric acid.The substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire surface.The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically.The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)plane.Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi substrate.The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm.The GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after deposition.The fabricated GaN/Psi film exhibited good electrical characteristics.

The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

Optofluidics:the interaction between light and flowing liquids in integrated devices

Optofluidics is a rising technology that combines microfluidics and optics.Its goal is to manipulate light and flowing liquids on the micro/nanoscale and exploiting their interaction in optofluidic chips.The fluid flow in the on-chip devices is reconfigurable,non-uniform and usually transports substances being analyzed,offering a new idea in the accurate manipulation of lights and biochemical samples.In this paper,we summarized the light modulation in heterogeneous media by unique fluid dynamic properties such as molecular diffusion,heat conduction,centrifugation effect,light-matter interaction and others.By understanding the novel phenomena due to the interaction of light and flowing liquids,quantities of tunable and reconfigurable optofluidic devices such as waveguides,lenses,and lasers are introduced.Those novel applications bring us firm conviction that optofluidics would provide better solutions to high-efficient and high-quality lab-on-chip systems in terms of biochemical analysis and environment monitoring.

Design of broadband achromatic metasurface device based on phase-change material Ge_(2)Sb_(2)Te_(5)

Based on the phase-change material Ge_(2)Sb_(2)Te_(5)(GST),achromatic metasurface optical device in the longer-infrared wavelength is designed.With the combination of the linear phase gradient GST nanopillar and the adjustment of the crystalline fraction m value of GST,the polarization insensitive achromic metalenses and beam deflector metasurface within the longer-infrared wavelength 9.5μm to 13μm are realized.The design results show that the achromatic metalenses can be focused on the same focal plane within the working waveband.The simulation calculation results show that the fullwidth at half-maximum(FWHM)of the focusing spot reaches the diffraction limit at each wavelength.In addition,the same method is also used to design a broadband achromatic beam deflector metasurface with the same deflection angle of 19°.The method proposed in this article not only provides new ideas for the design of achromatic metasurfaces,but also provides new possibilities for the integration of optical imaging,optical coding and other related optical systems.

A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.

Pulse Laser Deposition of HfO_(2)Nanoporous-Like Structure,Physical Properties for Device Fabrication

The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).

Creation and Destruction of Entanglement via Fourier Multiport Devices

We study entangling and disentangling functions of optical Fourier multiport devices in which input-output relation for the creation and annihilation operators is given by a finite Fourier transform. It is shown that these Fourier multiport devices can act as entanglement converters which can not only create entanglement from an unentangled state at the input but also destroy entanglement in an entangled state at the input. Creation and destruction of two-mode and three-mode entangled coherent states （ECSs） are investigated in detail. The creation and destruction of Bell-type two-mode ECS, GHZ-type and W-type three-mode ECSs are indicated explicitly through using Fourier four-port and six-port devices, respectively.

Weak Gate Effect in 1,3-Benzenedithiol Molecular Device

We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.

Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance

Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an ＇electrically written and optically read＇ information storage device employing BiFeO3/A u heterostruetures with strong absorption resonance. The electro- optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a sim- ulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read infor- mation storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.

Compact TE-pass polarizer based on lithium-niobate-on-insulator assisted by indium tin oxide and silicon nitride

An indium tin oxide(ITO) and silicon nitride(Si_(3)N_(4)) assisted compact TE-pass waveguide polarizer based on lithiumniobate-on-insulator is proposed and numerically analyzed.By properly designing the ITO and Si_(3)N_(4) assisted structure and utilizing the epsilon-near-zero effect of ITO,the TM mode is strongly confined in the ITO layer with extremely high loss,while the TE mode is hardly affected and passes through the waveguide with low loss.The simulation results show that the polarizer has an extinction ratio of 22.5 dB and an insertion loss of 0.8 dB at the wavelength of 1.55 μm,and has an operating bandwidth of about 125 nm(from 1540 nm to 1665 nm) for an extinction ratio of>20 dB and an insertion loss of<0.95 dB.Moreover,the proposed device exhibits large fabrication tolerances.More notably,the device is compact,with a length of only 7.5 μm,and is appropriate for on-chip applications.

Ultrafast laser processing of silk films by bulging and ablation for optical functional devices

Organic proteins are attractive owing to their unique optical properties,remarkable mechanical characteristics,and biocompatibility.Manufacturing multifunctional structures on organic protein films is essential for practical applications;however,the controllable fabrication of specific structures remains challenging.Herein,we propose a strategy for creating specific structures on silk film surfaces by modulating the bulging and ablation of organic materials.Unique surface morphologies such as bulges and craters with continuously varying diameters were generated based on the controlled ultrafast laser-induced crystal-form transition and plasma ablation of the silk protein.Owing to the anisotropic optical properties of the bulge/crater structures with different periods,the fabricated organic films can be used for large-scale inkless color printing.By simultaneously engineering bulge/crater structures,we designed and demonstrated organic film-based optical functional devices that achieves holographic imaging and optical focusing.This study provides a promising strategy for the fabrication of multifunctional micro/nanostructures that can broaden the potential applications of organic materials.

All polymer asymmetric Mach-Zehnder interferometer waveguide sensor by imprinting bonding and laser polishing

We present an all polymer asymmetric Mach-Zehnder interferometer （AMZI） waveguide sensor based on imprinting bonding and laser polishing method. The fabrication methods are compatible with high accuracy waveguide sensing structure. The rectangle waveguide structure of this sensor has three sensing surfaces contacting the test media, and its sensing accuracy can be increased 5 times compared with that of one surface sensing structure. An AMZI device structure is designed. The single mode condition, the length of the sensing arm, and the length deviation between the sensing arm and the reference arm are optimized. The length deviation is optimized to be 19.8 μm in a refractive index range between 1.470 and 1.545. We fabricate the AMZI waveguide by lithography and wet etching method. The imprinting bonding and laser polishing method is proposed and investigated. The insertion loss is between-80.36 dB and-10.63 dB. The average and linear sensitivity are 768.1 dB/RIU and 548.95 dB/RIU, respectively. And the average and linear detection resolution of the sensor are 1.3010-6 RIU （RIU：refractive index unit） and 1.8210-5 RIU, respectively. This sensor has a fast and cost-effective fabrication process which can be used in the cases of requiring portability and disposability.

S-type Er-Yb Co-doped Phosphate Glass Waveguide Amplifier Integrated with Cascaded Multilayer Medium Thin Film Filter

A new S-type of erbium-ytterbium co-doped phosphate glass waveguide amplifier integrated with cascaded multilayer medium thin film filter is proposed,this S-type geometry waveguide structure is used to achieve a long path in a compact chip,and obtained higher gain with lower Er-doped concentration. The cascaded multilayer medium thin film filter is utilized to achieve a broader flattening gain bandwidth.The intrinsical gain spectrum is obtained by solving rate and power propagation equations,the effect of transmittance spectrum of thin film filter on flattening gain is discussed.

Monolithic DWDM source with precise channel spacing

We report a low-cost manufacturing approach for fabricating monolithic multi-wavelength sources for dense wavelength division multiplexing(DWDM)systems that offers high yield and eliminates crystal regrowth and selective area epitaxy steps that are essential in traditional fabrication methods.The source integrates an array of distributed feedback(DFB)lasers with a passive coupler and semiconductor optical amplifier(SOA).Ridge waveguide lasers with sampled Bragg side wall gratings have been integrated using quantum well intermixing to achieve a fully functional four-channel DWDM source with 0.8 nm wavelength spacing and residual errors<0.13 nm.The output power from the SOA is>10 mW per channel making the source suitable for use in passive optical networks(PONs).We have also investigated using multisection phase-shifted sampled gratings to both increase the effective grating coupling coefficient and precisely control the channel lasing wavelength spacing.An 8-channel DFB laser array with 100 GHz channel spacing was demonstrated using a sampled grating with twoπ-phase-shifted sections in each sampling period.The entire array was fabricated by only a single step of electron beam lithography.

非线性光学晶体电光快速调谐光参量器件的研制

Optical parametric lasers widely using in many science and technology field owin g to its merit of wide tunable spectrum range.But common optical parametric lase rs achieve tune by change of angel or temperature.The tune velocity and tune pre cision of these tune modes does not satisfy in many applications.The reporting i nto an optical parametric laser which achieve tune by electooptic effect,that have got speediness tune velocity and relatively quite tune precision. The optical parametric device design based on parametric fluorescent produce thr ough sum frequency phase matching in nonlinear optical crystals.It is a tune pr o cess of refractive index about parametric and pump light in nonlinear optical cr ystals namely.But refractive index of nonlinear optical crystals possess electro o ptic effect can change via apply transformable electro field.This change only w a nts a time of ns grade.So optical parametric device with nonlinear optical cryst als possess suitability electrooptic effect can realize speediness tune in princ iple.The idea about design on the recommended device here is somewhat as follows .The tune model is phase tuning.To strive increase the effect of electro optic f unction under keep immovable polarization directions of 3 wavelength in the opti cal parametric process,to strive convenient for apply electro field,the electro field is only sensitive for a refractive index of some wavelength in specificall y spectrum region.The principium examination has showed that the idea is reasona ble.Our count have show also that its tune precision same as expectance.

Planar Metamaterial Absorber Based on Lumped Elements

We present the design of a planar metamaterial absorber based on lumped elements, which shows a wide-band polarization-insensitive and wide-angle strong absorption. This absorber consists of metal electric resonators, the dielectric substrate, the metal film and lumped elements. The simulated absorbances under two different loss conditions indicate that high absorbance in the absorption band is mainly due to lumped resistances. The simulated absorbances under three different load conditions indicate that the local resonance circuit （lumped resistance and capacitance） could boost up the resonance of the whole RLC circuit. The simulated voltage in lumped elements indicates that the transformation efficiency from electromagnetic energy to electric energy in the absorption band is high, and electric energy is subsequently consumed by lumped resistances. This absorber may have potential applications in many military fields.

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.

Glaucomatous optic neuropathy treatment options:the promise of novel therapeutics,techniques and tools to help preserve vision

Peripheral vision loss followed by ＂tunnel vision＂ and eventual irreversible blindness is the fate of patients afflicted by various forms of glaucoma including primary open-angle glaucoma（POAG） and normotensive glaucoma（NTG）.These complex and heterogeneous diseases are characterized by extensive death of retinal ganglion cells（RGCs） accompanied by retraction and severance of their axonal connections to the brain and thus damage to and thinning of the optic nerve.Since patients suffering from this glaucomatous optic neuropathy（GON） first notice visual impairment when they have lost 〉 40% of their RGCs,early diagnosis is the key to retard the progression of glaucoma.Elevated intraocular pressure（IOP）,low cerebrospinal and/or low intracranial fluid pressure,advancing age,and ethnicity are major risk factors associated with POAG.However,retinal vascular abnormalities and a high sensitivity of RGCs and optic nerve head components to neurotoxic,inflammatory,oxidative and mechanical insults also contribute to vision loss in POAG/GON.Current treatment modalities for POAG and NTG involve lowering IOP using topical ocular drugs,combination drug products,and surgical interventions.Two recently approved multi-pharmacophoric drugs（e.g.,rho kinase inhibitor,Netarsudil;a drug conjugate,Latanoprostene Bunod） and novel aqueous humor drainage devices（i Stent and Cy Pass） are also gaining acceptance for treating POAG/NTG.Neuroprotective and regenerative agents,coupled with electroceutical,mechanical support systems,stem cell transplantation and gene therapy are emerging therapeutics on the horizon to help combat GON.The latter techniques and approaches hope to rejuvenate RGCs and repair the optic nerve structures,thereby providing a gain of function of the visual system for the glaucoma patients.

Nondoped Electrophosphorescent Organic Light-Emitting Diodes Based on Platinum Complexes

An undoped electrophosphorescent organic light-emitting diode is fabricated using a pure platinum（Ⅱ） （2-phenylpyridinato-N, Ca） （3-benzoyl-camphor） [（ppy）pt（bcam）] phosphorescent layer acting as the emitting layer. A maximum power efficiency Tlp of 6.621m/W and current efficiency of 14.78 cd/A at 745 cd/m2 are obtained from the device. The roll-off percentage of ηp of the pure phosphorescent phosphor layer device is reduced to 5% at a current density of 20mA/cm2, which is about 11% for conventional phosphorescent devices. The low roll-off efficiency is attributed to the phosphorescent material, which has the molecular structure of a strong steric hindrance effect.

Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode

The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.