Optical facet coatings for high-performance LWIR quantum cascade lasers atλ∼8.5μm

We report on the performance improvement of long-wave infrared quantum cascade lasers(LWIR QCLs)by studying and optimizing the anti-reflection(AR)optical facet coating.Compared to the Al2O3 AR coat⁃ing,the Y_(2)O_(3)AR coating exhibits higher catastrophic optical mirror damage(COMD)level,and the optical facet coatings of both material systems have no beam steering effect.A 3-mm-long,9.5-μm-wide buried-heterostruc⁃ture(BH)LWIR QCL ofλ~8.5μm with Y_(2)O_(3)metallic high-reflection(HR)and AR of~0.2%reflectivity coating demonstrates a maximum pulsed peak power of 2.19 W at 298 K,which is 149%higher than that of the uncoated device.For continuous-wave(CW)operation,by optimizing the reflectivity of the Y_(2)O_(3)AR coating,the maximum output power reaches 0.73 W,which is 91%higher than that of the uncoated device.

A perspective on high photon flux nonclassical light and applications in nonlinear optics

Nonclassical light sources have a vital role in quantum optics as they offer a unique resource for studies in quantum technology.However,their applicability is restricted by their low intensity,while the development of new schemes producing intense nonclassical light is a challenging task.In this perspective article,we discuss potential schemes that could be used towards the development of high photon flux nonclassical light sources and their future prospects in nonlinear optics.

P3: An installation for high-energy density plasma physics and ultra-high intensity laserematter interaction at ELI-Beamlines

ELI-Beamlines(ELI-BL),one of the three pillars of the Extreme Light Infrastructure endeavour,will be in a unique position to perform research in high-energy-density-physics(HEDP),plasma physics and ultra-high intensity(UHI)ð>10^(22) W=cm^(2)) lasereplasma interaction.Recently the need for HED laboratory physics was identified and the P3(plasma physics platform)installation under construction in ELI-BL will be an answer.The ELI-BL 10 PW laser makes possible fundamental research topics from high-field physics to new extreme states of matter such as radiation-dominated ones,high-pressure quantum ones,warm dense matter(WDM)and ultra-relativistic plasmas.HEDP is of fundamental importance for research in the field of laboratory astrophysics and inertial confinement fusion(ICF).Reaching such extreme states of matter now and in the future will depend on the use of plasma optics for amplifying and focusing laser pulses.This article will present the relevant technological infrastructure being built in ELI-BL for HEDP and UHI,and gives a brief overview of some research under way in the field of UHI,laboratory astrophysics,ICF,WDM,and plasma optics.

Efficient combination and enhancement of high-power mid-infrared pulses in plasmas

High-power intense optical sources in the mid-to-long wavelength infrared region are very attractive for a wide range of fields from fundamental research to materials science and biology applications.However,there are still significant challenges in extending long-wavelength infrared pulses into the relativistic regime using conventional optical techniques.Here,based upon a new type of plasma-based optical method,we present an efficient scheme capable of combining several high-power long-wavelength infrared laser pulses into one single,more intense pulse,thus bringing the intensity of the output pulse to the relativistic regime.Such intense infrared pulses will open up new possibilities for strong-field physics and ultrafast applications.Furthermore,this is beneficial to understand the underlying physics and nonlinear processes of modulation,propagation and energy transfer of high-power intense laser pulses in plasmas.

Quantum cascade lasers grown by MOCVD

Sharing the advantages of high optical power,high efficiency and design flexibility in a compact size,quantum cascade lasers(QCLs)are excellent mid-to-far infrared laser sources for gas sensing,infrared spectroscopic,medical diagnosis,and defense applications.Metalorganic chemical vapor deposition(MOCVD)is an important technology for growing high quality semiconductor materials,and has achieved great success in the semiconductor industry due to its advantages of high efficiency,short maintenance cycles,and high stability and repeatability.The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices.This review summarizes the recent progress of QCLs grown by MOCVD.Material quality and the structure design together determine the device performance.Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot （QD） lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.

Cryptanalysis and Improvement of Quantum Secret Sharing Protocol between Multiparty and Multiparty with Single Photons and Unitary Transformations

In a recent paper [Yan F L et al. Chin.Phys.Lett. 25（2008）1187], a quantum secret sharing the protocol between multiparty and multiparty with single photons and unitary transformations was presented. We analyze the security of the protocol and find that a dishonest participant can eavesdrop the key by using a special attack. Finally, we give a description of this strategy and put forward an improved version of this protocol which can stand against this kind of attack.

Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage

We present a density matrix approach for the theoretical description of an asymmetric double quantum dot （QD） system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems.

High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple？quantum-well （TI-MQW） Fabry-Perot （F-P） ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition （MOCVD）. Characteristic temperature T0 of 160 K at 20°C is obtained for 500？μm？long lasers. T0 is measured as high as 88 K in the temperature range of 15？75°C. Cavity length dependence of T0 is investigated.

Mid-IR Dual-Wavelength Difference Frequency Generation Using Fiber Lasers as Pump and Signal Light Sources

A continuous-wave mid-IR difference frequency laser source, which respectively uses an ytterbium-doped fiber laser as the pump source and a multiwavelength erbium-doped fiber laser cascaded with an erbium-doped fiber amplifier as the signal source, is demonstrated. Our experimental results show that two stable mid-IR radiation lines with a spacing of about 5.4nm may be simultaneously emitted by a suitable setting the pump and signal polarization orientations. The number of the mid-IR radiation lines is limited by the quasi-phase-matching acceptance bandwidth. By changing the PPMgLN temperature the two mid-IR radiation lines may be synchronously tuned in the mid-IR range between 3295 and 3356.3nm.

Design and Realization of InP/AlGaInAs MultipleQuantum Well Ring Laser

Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.

Measurement of electron density and electron temperature of a cascaded arc plasma using laser Thomson scattering compared to an optical emission spectroscopic approach

As advanced linear plasma sources, cascaded arc plasma devices have been used to generate steady plasma with high electron density, high particle flux and low electron temperature. To measure electron density and electron temperature of the plasma device accurately, a laser Thomson scattering（LTS） system, which is generally recognized as the most precise plasma diagnostic method, has been established in our lab in Dalian University of Technology. The electron density has been measured successfully in the region of 4.5？×10^19m^-3 to7.1？×10^20m^-3 and electron temperature in the region of 0.18 eV to 0.58 eV. For comparison,an optical emission spectroscopy（OES） system was established as well. The results showed that the electron excitation temperature（configuration temperature） measured by OES is significantly higher than the electron temperature（kinetic electron temperature） measured by LTS by up to 40% in the given discharge conditions. The results indicate that the cascaded arc plasma is recombining plasma and it is not in local thermodynamic equilibrium（LTE）. This leads to significant error using OES when characterizing the electron temperature in a non-LTE plasma.

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si-Si_(3)N_(4) dielectric layer

The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.

Numerical investigation on photonic microwave generation by a sole excited-state emitting quantum dot laser with optical injection and optical feedback

Based on three-level exciton model,the enhanced photonic microwave signal generation by using a sole excited-state(ES)emitting quantum dot(QD)laser under both optical injection and optical feedback is numerically studied.Within the range of period-one(P1)dynamics caused by the optical injection,the variations of microwave frequency and microwave intensity with the parameters of frequency detuning and injection strength are demonstrated.It is found that the microwave frequency can be continuously tuned by adjusting the injection parameters,and the microwave intensity can be enhanced by changing the injection strength.Moreover,considering that the generated microwave has a wide linewidth,an optical feedback loop is further employed to compress the linewidth,and the effect of feedback parameters on the linewidth is investigated.It is found that with the increase of feedback strength or delay time,the linewidth is evidently decreased due to the locking effect.However,for the relatively large feedback strength or delay time,the linewidth compression effect becomes worse due to the gradually destroyed P1 dynamics.Besides,through optimizing the feedback parameters,the linewidth can be reduced by up to more than one order of magnitude for different microwave frequencies.

Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode

The effects of the quantum well(QW)width,carrier density,and aluminium(Al)concentration in the barrier layers on the optical characteristics of a gallium nitride(GaN)-based QW laser diode are investigated by means of a careful modelling analysis in a wide range of temperatures.The device’s optical gain is calculated by using two different band energy models.The first is based on the simple band-to-band model that accounts for carrier transitions between the first levels of the conduction band and valence band,whereas the second assumes the perturbation theory(k.p model)for considering the valence intersubband transitions and the relative absorption losses in the QW.The results reveal that the optical gain increases with increasing the n-type doping density as well as the Al molar fraction of the AlxGa1–xN layers,which originate the GaN compressivestrained QW.In particular,a significant optical gain on the order of 5000 cm^-1 is calculated for a QW width of 40A at room temperature.In addition,the laser threshold current density is of few tens of A/cm^2 at low temperatures.

Plasma diagnostics by optical emission spectroscopy on manganese ore in conjunction with XRD, XRF and SEM-EDS

Manganese(Mn) is an important industrial mineral.Information about the chemical and phase constitution along with the concentration of impurities presented in Mn ore is compulsory in assessing its suitability for different applications.We performed the qualitative and quantitative analysis of low-grade Mn ore(LGMO) using laser-induced breakdown spectroscopy(LIBS) in conjunction with x-ray diffraction(XRD), x-ray fluorescence(XRF) and scanning electron microscopy(SEM) coupled with energy dispersive x-ray electron spectroscopy(EDS).The optical emission spectra of the LGMO sample displayed the presence of Mn, Si, Ca, Fe, Al, Mg,V, Ti, Sr, Ni, Na, Ba and Li.The plasma parameters, electron temperature and number density were estimated using the Boltzmann plot and Stark broadening line profile methods and were found to be 7500 K±750 K and 8.18±0.8×1017 cm-3, respectively.Quantitative analysis was performed using the calibration-free LIBS(CF-LIBS) method and its outcome along with XRD, XRF and SEM-EDS data showed almost analogous elemental composition, while the LIBS method gave acceptably precise elemental analysis by detecting the low atomic number element Li besides V and Sr.The results obtained using LIBS for the LGMO exhibited its ability as a powerful analytical tool and XRF, XRD and SEM-EDS as complementary methods for the compositional analysis of complex low-grade mineral ore.

Characteristics of Laser Produced Plasmas Obtained by Fast ICCD Photography, Schlieren Photography and Optical Emission Spectroscopy

Pulsed laser produced plasmas(LPP)are important for industrial applications and fundamental researches,and their complex,multi-physical and cross-chemical processes need to be investigated more comprehensively.In this work,images of the luminous plasma,the spatial density distribution,and the plasma parameters are experimentally investigated by using fast ICCD photography,schlieren photography,and optical emission spectroscopy.Plasmas are produced by a 1 064 nm,15 ns Nd:YAG laser.Free expanding and splitting phenomena are observed in vacuum(at the pressure of about 1×10 3Pa)and air(at the pressure of 20 Pa)using fast photography,respectively.Meanwhile,shock waves formed in the atmospheric laser produced plasma are visualized by schlieren photography.The formation of shock waves is interpreted with the Sedov-Taylor theory,and an averaged expansion velocity about 375 m/s of the shock waves is estimated during 200～1 000 ns.Atmospheric air is found to have significant confinement effects on the plasma expansions compared to that in vacuum or low pressure ambient.Based on the optical emission spectroscopy,after 1 000 ns,at 0.6 mm above the target,the plasma temperature is about 7 800 K and the electron number density is approximately 0.64×1016cm-3.

Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum （Mo） as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm^- 1.

Accuracy Improvement of Blood Glucose Measurement System Using Quantum Cascade Lasers

For non-invasive measurement of blood glucose levels, a measurement system based on mid-infrared, attenuated-total-reflection spectroscopy equipped with hollow optical fibers, a trapezoidal multi-reflection prism, and two fixed-wavelength quantum cascade lasers emitting different wavelengths is proposed. From the absorption spectra of lip mucosa measured by Fourier-transform infrared spectrometry, two wavelengths, 1152 cm-1 for absorption by glucose and 1186 cm-1 for the background, were chosen. To reduce measurement errors, the power distribution on the prism surface was investigated, and it was found that some high-intensity spots appear on the prism surface due to the coherency of the laser beam. This inhomogeneous power distribution causes measurement errors for slight movements of the lip mucosa. To homogenize the intensity distribution on the prism, a lens to excite higher modes in the fiber was introduced, and the incident angle was changed to suppress interference due to back-reflected light. These improvements increased the measurement stability, and in-vivo experiments demonstrated that the measured optical absorption correlates well with blood glucose levels.

Time-Domain Traveling Wave Model of Single-Section Quantum Dot Mode-Locked Lasers with Optical Feedback

The optical feedback modulations of a passively mode-locked semiconductor laser with quantum dot structure were investigated in this study. The delay-induced dynamics of QD MLL under the condition of optical feedback have been studied by exploiting a time domain traveling wave(TDTW) model. The conventional TDTW model was improved to make it suitable for studying optical feedback system, especially the system with long external cavity structure. Combing the TDTW model with optical feedback and carrier rate equations, the pulse variation of a single section QD MLL was studied. This new model shows good agreement with the published experimental data. The roundtrip time and local light intensity modulation to the pulse evolution of QD MLL were studied. The results show that when the time for a light to go to and return from external cavity is equal to the integral times of the period of laser pulse without external feedback, resonance will be formed, and the period of pulse sequence is the shortest. The results also show that the stronger the local light intensity modulation is, the shorter the pulse period is.