Effect of lattice distortion on spin admixture and quantum transport in organic devices with spin–orbit coupling

With an extended Su–Schrieffer–Heeger model and Green's function method, the spin–orbit coupling(SOC) effects on spin admixture of electronic states and quantum transport in organic devices are investigated. The role of lattice distortion induced by the strong electron–lattice interaction in organics is clarified in contrast with a uniform chain. The results demonstrate an enhanced SOC effect on the spin admixture of frontier eigenstates by the lattice distortion at a larger SOC,which is explained by the perturbation theory. The quantum transport under the SOC is calculated for both nonmagnetic and ferromagnetic electrodes. A more notable SOC effect on total transmission and current is observed for ferromagnetic electrodes, where spin filtering induced by spin-flipped transmission and suppression of magnetoresistance are obtained.Unlike the spin admixture, a stronger SOC effect on transmission exists for the uniform chain rather than the organic lattices with distortion. The reason is attributed to the modified spin-polarized conducting states in the electrodes by lattice configuration, and hence the spin-flip transmission, instead of the spin admixture of eigenstates. This work is helpful to understand the SOC effect in organic spin valves in the presence of lattice distortion.

Spin logic devices based on negative differential resistance -enhanced anomalous Hall effect

Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.

Ab initio nonadiabatic molecular dynamics study on spin–orbit coupling induced spin dynamics in ferromagnetic metals

Understanding the photoexcitation induced spin dynamics in ferromagnetic metals is important for the design of photo-controlled ultrafast spintronic device.In this work,by the ab initio nonadiabatic molecular dynamics simulation,we have studied the spin dynamics induced by spin–orbit coupling(SOC)in Co and Fe using both spin-diabatic and spin-adiabatic representations.In Co system,it is found that the Fermi surface(E_(F))is predominantly contributed by the spin-minority states.The SOC induced spin flip will occur for the photo-excited spin-majority electrons as they relax to the E_(F),and the spin-minority electrons tend to relax to the EFwith the same spin through the electron–phonon coupling(EPC).The reduction of spin-majority electrons and the increase of spin-minority electrons lead to demagnetization of Co within100 fs.By contrast,in Fe system,the E_(F) is dominated by the spin-majority states.In this case,the SOC induced spin flip occurs for the photo-excited spin-minority electrons,which leads to a magnetization enhancement.If we move the E_(F) of Fe to higher energy by 0.6eV,the E_(F) will be contributed by the spin-minority states and the demagnetization will be observed again.This work provides a new perspective for understanding the SOC induced spin dynamics mechanism in magnetic metal systems.

Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm_(1-χ)Ce_χ VO_3

The effects of Ce-doping on the phase transition of the orbital/spin ordering （OO/SO） are studied through the structural, magnetic, and electrical transport measurements of perovskite vanadate Sm1 x Ce x VO 3 . The measurements of structure show that the cell volume decreases as x≤ 0.05, and then increases as Ce-doping level increases further. The OO state exists but is suppressed progressively in the sample with x≤0.2 and disappears as x0.2. The temperature at which the C-type SO transition is present increases monotonically with Ce-doping level increasing. The temperature dependence of resistivity for each of the samples shows a semiconducting transport behavior and the transport can be well described by the thermal activation model. The activation energy first decreases as x ≤0.2, and then increases for further doping. The obtained results are discussed in terms of the mixed-valent state of the doped-Ce ions.

Spin and Orbital Magnetisms of NiFe Compound:Density Functional Theory Study and Monte Carlo Simulation

The self-consistent ab initio calculations based on the density functional theory approach using the full potential linear augmented plane wave method are performed to investigate both the electronic and magnetic properties of the NiFe compound. Polarized spin within the framework of the ferromagnetic state between magnetic ions is considered. Also, magnetic moments considered to lie along （001） axes are computed. The Monte Carlo simulation is used to study the magnetic properties of NiFe. The transition temperature To, hysteresis loop, coercive field and remanent magnetization of the NiFe compound are obtained using the Monte Carlo simulation.

Rashba spin-orbit coupling induced rectified currents in monolayer graphene with exchange field and sublattice potential

We investigate the effect of Rashba spin-orbit coupling(RSOC)on photoconductivities of rectified currents in monolayer graphene with exchange field and sublattice potential.The system shows that the photoconductivities of resonant shift and injection current contributions are nonzero,while the photoconductivities of non-resonant shift current contribution are zero.We find that the RSOC induces a warping term,which leads to the nonzero rectified currents.Moreover,the photoconductivities of resonant injection(shift)current contribution are(not)related to the relaxation rate.The similar behavior can be found in other Dirac materials,and our findings provide a way to tune the nonlinear transport properties of Dirac materials.

Perspectives of spin-valley locking devices

Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information.However,it is technically nontrivial to produce a stable valley polarization and to achieve efficient control and manipulation of valleys.Spin–valley locking refers to the coupling between spin and valley degrees of freedom in the materials with large spin–orbit coupling(SOC)and enables the manipulation of valleys indirectly through controlling spins.Here,we review the recent advances in spin–valley locking physics and outline possible device implications.In particular,we focus on the spin–valley locking induced by SOC and external electric field in certain two-dimensional materials with inversion symmetry and demonstrate the intriguing switchable valley–spin polarization,which can be utilized to design the promising electronic devices,namely,valley-spin valves and logic gates.

Electrical manipulation of a hole‘spin'–orbit qubit in nanowire quantum dot:The nontrivial magnetic field effects

Strong‘spin’–orbit coupled one-dimensional hole gas is achievable in a Ge nanowire in the presence of a strong magnetic field.The strong magnetic field lifts the two-fold degeneracy in the hole subband dispersions,so that the effective low-energy subband dispersion exhibits strong spin–orbit coupling.Here,we study the electrical spin manipulation in a Ge nanowire quantum dot for both the lowest and second lowest hole subband dispersions.Using a finite square well to model the quantum dot confining potential,we calculate exactly the level splitting of the spin–orbit qubit and the Rabi frequency in the electric-dipole spin resonance.The spin–orbit coupling modulated longitudinal g-factor gso is not only non-vanishing but also magnetic field dependent.Moreover,the spin–orbit couplings of the lowest and second lowest subband dispersions have opposite magnetic dependences,so that the results for these two subband dispersions are totally different.It should be noticed that we focus only on the properties of the hole‘spin’instead of the real hole spin.

Spin–orbit torque in perpendicularly magnetized[Pt/Ni]multilayers

The performance of spin–orbit torque(SOT)in heavy metal/ferromagnetic metal periodic multilayers has attracted widespread attention.In this paper,we have successfully fabricated a series of perpendicular magnetized[Pt(2-t)/Ni(t)]_4 multilayers,and studied the SOT in the multilayers by varying the thickness of Ni layer t.The current induced magnetization switching was achieved with a critical current density of 1×10^(7)A/cm^(2).The damping-like SOT efficiencyξ_(DL)was extracted from an extended harmonic Hall measurement.We demonstrated that theξ_(DL)can be effectively modulated by t_(Pt)/t_(Ni)ratio of Pt and Ni in the multilayers.The SOT investigation about the[Pt/Ni]N multilayers might provide new material candidates for practical perpendicular SOT-MRAM devices.

Coexistence of giant Rashba spin splitting and quantum spin Hall effect in H–Pb–F

Rashba spin splitting(RSS)and quantum spin Hall effect(QSHE)have attracted enormous interest due to their great significance in the application of spintronics.In this work,we theoretically proposed a new two-dimensional(2D)material H–Pb–F with coexistence of giant RSS and quantum spin Hall effec by using the ab initio calculations.Our results show that H–Pb–F possesses giant RSS(1.21 eV·A)and the RSS can be tuned up to 4.16 e V·A by in-plane biaxial strain,which is a huge value among 2D materials.Furthermore,we also noticed that H–Pb–F is a 2D topological insulator(TI)duo to the strong spin–orbit coupling(SOC)interaction,and the large topological gap is up to 1.35 e V,which is large enough for for the observation of topological edge states at room temperature.The coexistence of giant RSS and quantum spin Hall effect greatly broadens the potential application of H–Pb–F in the field of spintronic devices.

First-principles study of electronic and magnetic properties of Fe atoms on Cu_(2)N/Cu(100)

First-principles calculations were conducted to investigate the structural,electronic,and magnetic properties of single Fe atoms and Fe dimers on Cu_(2)N/Cu(100).Upon adsorption of an Fe atom onto Cu_(2)N/Cu(100),robust Fe-N bonds form,resulting in the incorporation of both single Fe atoms and Fe dimers within the surface Cu_(2)N layer.The partial occupancy of Fe-3d orbitals lead to large spin moments on the Fe atoms.Interestingly,both single Fe atoms and Fe dimers exhibit in-plane magnetic anisotropy,with the magnetic anisotropy energy(MAE)of an Fe dimer exceeding twice that of a single Fe atom.This magnetic anisotropy can be attributed to the predominant contribution of the component along the x direction of the spin-orbital coupling Hamiltonian.Additionally,the formation of Fe-Cu dimers may further boost the magnetic anisotropy,as the energy levels of the Fe-3d orbitals are remarkably influenced by the presence of Cu atoms.Our study manifests the significance of uncovering the origin of magnetic anisotropy in engineering the magnetic properties of magnetic nanostructures.

Effect of the mixing of s-wave and chiral p-wave pairings on electrical shot noise properties of normal metal/superconductor tunnel junctions

We study theoretically the electrical shot noise properties of tunnel junctions between a normal metal and a superconductor with the mixture of singlet s-wave and chiral triplet p-wave pairing due to broken inversion symmetry. We investigate how the shot noise properties vary as the relative amplitude between the two parity components in the pairing potential is changed. It is demonstrated that some characteristics of the electrical shot noise properties of such tunnel junctions may depend sensitively on the relative amplitude between the two parity components in the pairing potential, and some significant changes may occur in the electrical shot noise properties when the relative amplitude between the two parity components is varied from the singlet s-wave pairing dominated regime to the chiral triplet p-wave pairing dominated regime. In the chiral triplet p-wave pairing dominated regime, the ratio of noise power to electric current is close to 2e both in the in-gap and in the out-gap region. In the singlet s-wave pairing dominated regime, the value of this ratio is close to 4e in the inner gap region but may reduce to about 2e in the outer gap region as the relative amplitude of the chiral triplet pairing component is increased. The variations of the differential shot noise with the bias voltage also exhibit some significantly different features in different regimes. Such different features can serve as useful diagnostic tools for the determination of the relative magnitude of the two parity components in the pairing potential.

Exchange coupling and helical spin order in the triangular lattice antiferromagnet CuCrO_2 using first principles

The magnetic and electronic properties of the geometrically frustrated triangular antiferromagnet CuCrO2 are investigated by first principles through density functional theory calculations within the generalized gradient approxi- mations （GGA）＋U scheme. The spin exchange interactions up to the third nearest neighbours in the ab plane as well as the coupling between adjacent layers are calculated to examine the magnetism and spin frustration. It is found that CuCrO2 has a natural two-dimensional characteristic of the magnetic interaction. Using Monte Carlo simulation, we obtain the Neel temperature to be 29.9 K, which accords well with the experimental value of 24 K. Based on non- collinear magnetic structure calculations, we verify that the incommensurate spiral-spin structure with （110） spiral plane is believable for the magnetic ground state, which is consistent with the experimental observations. Due to intra-layer geometric spin frustration, parallel helical-spin chains arise along the a, b, or a＋ b directions, each with a screw-rotation angle of about I20°. Our calculations of the density of states show that the spin frustration plays an important role in the change of d-p hybridization, while the spin-orbit coupling has a very limited influence on the electronic structure.

Spin and valley half metal induced by staggered potential and magnetization in silicene

We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices.

Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic,extrinsic,and external electric-field induced spin-orbit couplings

The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.

Pure spin polarized transport based on Rashba spin orbit interaction through the Aharonov Bohm interferometer embodied four-quantum-dot ring

The spin-polarized linear conductance spectrum and current–voltage characteristics in a four-quantum-dot ring embodied into Aharonov–Bohm （AB） interferometer are investigated theoretically by considering a local Rashba spin–orbit interaction. It shows that the spin-polarized linear conductance and the corresponding spin polarization are each a function of magnetic flux phase at zero bias voltage with a period of 2π, and that Hubbard U cannot influence the electron transport properties in this case. When adjusting appropriately the structural parameter of inter-dot coupling and dot-lead coupling strength, the electronic spin polarization can reach a maximum value. Furthermore, by adjusting the bias voltages applied to the leads, the spin-up and spin-down currents move in opposite directions and pure spin current exists in the configuration space in appropriate situations. Based on the numerical results, such a model can be applied to the design of a spin filter device.

Global phase diagram of a spin–orbit-coupled Kondo lattice model on the honeycomb lattice

Motivated by the growing interest in the novel quantum phases in materials with strong electron correlations and spin–orbit coupling, we study the interplay among the spin–orbit coupling, Kondo interaction, and magnetic frustration of a Kondo lattice model on a two-dimensional honeycomb lattice.We calculate the renormalized electronic structure and correlation functions at the saddle point based on a fermionic representation of the spin operators.We find a global phase diagram of the model at half-filling, which contains a variety of phases due to the competing interactions.In addition to a Kondo insulator, there is a topological insulator with valence bond solid correlations in the spin sector, and two antiferromagnetic phases.Due to the competition between the spin–orbit coupling and Kondo interaction, the direction of the magnetic moments in the antiferromagnetic phases can be either within or perpendicular to the lattice plane.The latter antiferromagnetic state is topologically nontrivial for moderate and strong spin–orbit couplings.

Influence of spin-orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a Rashba two-dimensional electron gas

We study theoretically the influence of spin-orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a two-dimensional electron gas with Rashba spin-orbit coupling. We show that, after such an influence is taken into account, the static intrinsic spin-Hall effect can be stabilized in a disordered Rashba twodimensional electron gas, and the static intrinsic spin-Hall conductivity shall exhibit some interesting characteristics as conceived in some original theoretical proposals.

Thermopower in parallel double quantum dots with Rashba spin-orbit interaction

Based on the Green＇s function technique and the equation of motion approach, this paper theoretically studies the thermoelectric effect in parallel coupled double quantum dots （DQDs）, in which Rashba spin-orbit interaction is taken into account. Rashba spin^rbit interaction contributions, even in a magnetic field, are exhibited obviously in the double quantum dots system for the thermoelectric effect. The periodic oscillation of thermopower can be controlled by tunning the Rashba spin^rbit interaction induced phase. The interesting spin-dependent thermoelectric effects will arise which has important influence on thermoelectric properties of the studied system.

Spin-dependent Breit-Wigner and Fano resonances in photon-assisted electron transport through a semiconductor heterostructure

We theoretically investigate the electron transmission through a seven-layer semiconductor heterostructure with the Dresselhaus spin-orbit coupling under two applied oscillating fields. Numerical results show that both of the spindependent symmetric Breit-Wigner and the asymmetric Fano resonances appear and that the properties of these two types of resonance peaks are dependent on the amplitudc and the relative phases of the two applicd oscillating fields. The modulation of the spin-polarization efficiency of transmitted electrons by the relative phase is also discussed.