Spin–orbit torque in perpendicularly magnetized[Pt/Ni]multilayers

The performance of spin–orbit torque(SOT)in heavy metal/ferromagnetic metal periodic multilayers has attracted widespread attention.In this paper,we have successfully fabricated a series of perpendicular magnetized[Pt(2-t)/Ni(t)]_4 multilayers,and studied the SOT in the multilayers by varying the thickness of Ni layer t.The current induced magnetization switching was achieved with a critical current density of 1×10^(7)A/cm^(2).The damping-like SOT efficiencyξ_(DL)was extracted from an extended harmonic Hall measurement.We demonstrated that theξ_(DL)can be effectively modulated by t_(Pt)/t_(Ni)ratio of Pt and Ni in the multilayers.The SOT investigation about the[Pt/Ni]N multilayers might provide new material candidates for practical perpendicular SOT-MRAM devices.

Spin logic devices based on negative differential resistance -enhanced anomalous Hall effect

Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.

Spin orbit torques in Pt-based heterostructures with van der Waals interface

Spin orbit torques(SOTs)in ferromagnet/heavy-metal heterostructures have provided great opportunities for efficient manipulation of spintronic devices.However,deterministically field-free switching of perpendicular magnetization with SOTs is forbidden because of the global two-fold rotational symmetry in conventional heavy-metal such as Pt.Here,we engineer the interface of Pt/Ni heterostructures by inserting a monolayer MoTe_(2)with low crystal symmetry.It is demonstrated that the spin orbit efficiency,as well as the out-of-plane magnetic anisotropy and the Gilbert damping of Ni are enhanced,due to the effect of orbital hybridization and the increased spin scatting at the interface induced by MoTe_(2).Particularly,an out-of-plane damping-like torque is observed when the current is applied perpendicular to the mirror plane of the MoTe_(2)crystal,which is attributed to the interfacial inversion symmetry breaking of the system.Our work provides an effective route for engineering the SOT in Pt-based heterostructures,and offers potential opportunities for van der Waals interfaces in spintronic devices.

Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir_(20)Mn_(80)

Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.

RF magnetron sputtering induced the perpendicular magnetic anisotropy modification in Pt/Co based multilayers

We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic films.The magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer thickness.According to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of PMA.The amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be modified.Our study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.

Recent progress on excitation and manipulation of spin-waves in spin Hall nano-oscillators

Spin Hall nano oscillator(SHNO),a new type spintronic nano-device,can electrically excite and control spin waves in both nanoscale magnetic metals and insulators with low damping by the spin current due to spin Hall effect and interfacial Rashba effect.Several spin-wave modes have been excited successfully and investigated substantially in SHNOs based on dozens of different ferromagnetic/nonmagnetic(FM/NM)bilayer systems(e.g.,FM=Py,[Co/Ni],Fe,CoFeB,Y3Fe5O12;NM=Pt,Ta,W).Here,we will review recent progress about spin-wave excitation and experimental parameters dependent dynamics in SHNOs.The nanogap SHNOs with in-plane magnetization exhibit a nonlinear self-localized bullet soliton localized at the center of the gap between the electrodes and a secondary high-frequency mode which coexists with the primary bullet mode at higher currents.While in the nanogap SHNOs with out of plane magnetization,besides both nonlinear bullet soliton and propagating spin-wave mode are achieved and controlled by varying the external magnetic field and current,the magnetic bubble skyrmion mode also can be excited at a low in-plane magnetic field.These spin-wave modes show thermal-induced mode hopping behavior at high temperature due to the coupling between the modes mediated by thermal magnon mediated scattering.Moreover,thanks to the perpendicular magnetic anisotropy induced effective field,the single coherent mode also can be achieved without applying an external magnetic field.The strong nonlinear effect of spin waves makes SHNOs easy to achieve synchronization with external microwave signals or mutual synchronization between multiple oscillators which improve the coherence and power of oscillation modes significantly.Spin waves in SHNOs with an external free magnetic layer have a wide range of applications from as a nanoscale signal source of low power consumption magnonic devices to spin-based neuromorphic computing systems in the field of artificial intelligence.

Field-free switching through bulk spin−orbit torque in L10-FePt films deposited on vicinal substrates

L1_(0)-FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy(PMA),enabling thermally stabile memory cells to scale down to 3 nm.The recently discovered“bulk”spin−orbit torques in L1_(0)-FePt provide an efficient and scalable way to manipulate the L1_(0)-FePt magnetization.However,the existence of an external field during the switching limits its practical application,and therefore field-free switching of L1_(0)-FePt is highly demanded.In this manuscript,by growing the L1_(0)-FePt film on vicinal MgO(001)substrates,we realize the field-free switching of L1_(0)-FePt.This method is different from previously established strategies as it does not need to add other functional layers or create asymmetry in the film structure.The dependence on the vicinal angle,film thickness,and growth temperature demonstrates a wide operation window for the fieldfree switching of L1_(0)-FePt.We confirm the physical origin of the field-free switching is due to the tilted anisotropy of L1_(0)-FePt induced by the vicinal surface.We also quantitatively characterize the spin-orbit torques in the L1_(0)-FePt films.Our results extend beyond the established strategies to realize field-free switching,and potentially could be applied to mass production.

Challenges and opportunities for spintronics based on spin orbit torque

Spintronic devices based on spin orbit torque(SoT)have become the most promising pathway to the nextgeneration of ultralow-power nonvolatile logic and memory applications.Typical SOT-based spintronic devices consist of two functional materials:a spin source and a magnetic material.Spin source materials possess a strong spin orbit coupling,enabling efficient interconversion between charge and spin current,Magnetic materials are used to process and archive the information via the interaction between the local magnetic moment and the spin current generated from spin source.Considerable efforts have been put into the design of materials and devices in the past decades to realize the electrical control of magnetic switching.However,a number of key challenges stll remain to be addressed for the practical application.In this paper,we reviewed the development of a range of novel materials for both the spin source and the magnetic functionalities,particularly the complex oxides and organic spintronic materials.We also discussed and highlighted several key issues,such as the mechanism and manipulation of SOT and the large-scale integration of sOT-based devices,which merit more attention in the future.