Temperature Dependence of Electrical Properties of Organic Thin Film Transistors Based on pn Heterojuction and Their Applications in Temperature Sensors

Organic thin film transistors based on an F16CuPc/α6T pn heterojunction have been fabricated and analyzed to investigate the temperature dependence of electrical properties and apply in temperature sensors. The mobility follows a thermally activated hopping process. At temperatures over 200 K, the value of thermal activation energy (EA) is 40. 1 meV, similar to that of the single-layer device. At temperatures ranging from 100 to 200 K, we have a second regime with a much lower EA of 16.3 meV, where the charge transport is dominated by shallow traps. Similarly, at temperatures above 200 K, threshold voltage (VT) increases linearly with decreasing temperature, and the variations of VT of 0.185 V/K is larger than the variation of VT (~0.020 V/K) in the single layer devices. This result is due to the interface dipolar charges. At temperatures ranging from 100 K to 200 K, we have a second regime with much lower variations of 0.090 V/K. By studying gate voltage (VG)-dependence temperature variation factor (k), the maximum value of k (~0.11 dec/K) could be obtained at VG = 5 V. Furthermore, the pn heterojunction device could be characterized as a temperature sensor well working at low operating voltages.

Control of polymorphism in solution-processed organic thin film transistors by self-assembled monolayers

Polymorphism of organic semiconductor films is of key importance for the performance of organic thin film transistors(OTFTs).Herein,we demonstrate that the polymorphism of solution-processed organic semiconductors in thin film transistors can be controlled by finely tuning the surface nanostructures of substrates with self-assembled monolayers(SAMs).It is found that the SAMs of 12-cyclohexyldodecylphosphonic acid(CDPA)and 12-phenyldodecylphosphonic acid(Ph DPA)induce different polymorphs in the dip-coated films of 2-dodecyl[1]benzothieno[3,2-b][1]benzothiophene(BTBT-C12).The film of BTBT-C12 on CDPA exhibits field effect mobility as high as 28.1 cm2 V-1 s-1 for holes,which is higher than that of BTBT-C12 on Ph DPA by three times.The high mobility of BTBT-C12 on CDPA is attributable to the highly oriented films of BTBT-C12 with a reduced in-plane lattice and high molecular alignment.

Pendant Group Effect of Polymeric Dielectrics on the Performance of Organic Thin Film Transistors

Polymer dielectric is superior to its inorganic counterparts due to not only the low cost and intrinsic flexibility,but also the readily tunable dielectric constant,surface charge trap density,charge ejection and releasing ability and dipole moment,and all these properties play decisive roles in regulating the characteristic and performances of organic thin film transistors(OTFT).However,systematical studies on the relationship between structure and properties of polymeric dielectrics are rare.To this end,a series of polymeric dielectrics with well-defined linkages(ester or amide bonds)and predesigned pendant groups(alkyl-and aromatic-groups)are synthesized in high yields.Detailed studies show that the polyamide dielectrics exhibit higher dielectric constant,surface charge trapping density,and better charge storage capability than corresponding polyester dielectrics.Further,increasing theπelectron delocalization of the pendant groups generally benefits the charge storage property and transistor memory behavior.Theoretical calculation reveals that the hydrogen bonding between the linkage groups and the energy alignment between polymeric dielectric and semiconductor are responsible for the observed performance differences of OTFT with different polymeric dielectrics.These results may shine light on the design of polymeric dielectrics for OTFTs with different applications.

Asymmetric side-chain engineering of organic semiconductor for ultrasensitive gas sensing

Molecular structure of organic semiconductor plays a critical role in determining the performance and functionality of organic electronic devices,by optimizing the electrical,optical and physicochemical properties.Substituted alkyl chains are fundamental units in tailering the solubility and assemblability,among which the asymmetric properties have been reported as key element for controlling the packing motifs and intrinsic charge transport.Here,we expanded the scope of molecular asymmetry dependent sensing features based on a new series of naphthalene diimides(NDI)-based derivatives substituted with a same branching alkyl chain but various linear-shaped alkyl chains(Cn-).A clear molecular stacking change,from head-to-head bilayer to head-to-tail monolayer packing model,is observed based on the features of anisotropic molecular interactions with the change in the chain length.Most importantly,a unique LUMO level shift of 0.17 eV is validated for NDI-PhC4,providing a record sensitivity up to 150%to 0.01 ppb ammonia,due to the desired molecular reactivity and device amplification properties.These results indicate that asymmetric side-chain engineering opens a route for breath healthcare.

Printed unmanned aerial vehicles using paper-based electroactive polymer actuators and organic ion gel transistors

We combined lightweight and mechanically flexible printed transistors and actuators with a paper unmanned aerial vehicle(UAV)glider prototype to demonstrate electrically controlled glide path modification in a lightweight,disposable UAV system.The integration of lightweight and mechanically flexible electronics that is offered by printed electronics is uniquely attractive in this regard because it enables flight control in an inexpensive,disposable,and easily integrated system.Here,we demonstrate electroactive polymer(EAP)actuators that are directly printed into paper that act as steering elements for low cost,lightweight paper UAVs.We drive these actuators by using ion gel-gated organic thin film transistors(OTFTs)that are ideally suited as drive transistors for these actuators in terms of drive current and frequency requirements.By using a printing-based fabrication process on a paper glider,we are able to deliver an attractive path to the realization of inexpensive UAVs for ubiquitous sensing and monitoring flight applications.

Growth Behavior of Rubrene Thin Films on Hexagonal Boron Nitride in the Early Stage

Two-dimensional materials,with an in-plane ordered and dangling-bonding-free surface,are ideal substrates for fabricating high-quality crystalline thin films.Here,we show a systematic study on the growth of a benchmark organic semiconductor,rubrene,on hexagonal boron nitride(h-BN)substrate via physical vapor deposition from the initial amorphous phase to the final crystalline phase;the role of temperature in such transition and the epitaxy relationship between rubrene and h-BN are revealed.With the increase of substrate temperature,the critical thickness of amorphous-crystalline-transition decreases and the morphology of crystalline phase also evolves from porous to terrace-like.When substrate temperature reaches>100℃,the critical thickness reduces to only 0.5 nm and a precise layer-by-layer growth from the very first layer is achieved,which is quite rare for rubrene growing on other substrates.The high ordering can be attributed to the fine epitaxy relationship between rubrene films and the h-BN surface lattice,and this film demonstrates good charge transport ability with a p-type field-effect mobility of>1 cm^(2)·V^(-1)·s^(-1).

Selenium-containing core-expanded naphthalene diimides for high performance n-type organic semiconductors

The incorporation of heavy atoms into molecular backbone is an extremely straightforward strategy for fine-tuning the optoelectronic properties of organic semiconductors.However,it is rarely studied in n-type small molecules.Herein,by selenium substitution of NDI3 HU-DTYM2,two Se-decorated core-expanded naphthalene diimides(NDI)derivatives DTYM-NDI3 HUDSYM(1)and NDI3 HU-DSYM2(2)were synthesized.In comparison with the reference S-containing compound NDI3 HUDTYM2,the highest occupied molecular orbital(HOMO)and lowest unoccupied molecular orbital(LUMO)energy levels of 1 and 2 were fine-tuned with?HOMO of about 0.2 e V,?LUMO of 0.1 e V and the narrowed HOMO-LUMO gaps.More surprisingly,the as-spun organic thin film transistors(OTFTs)based on 1 and 2 both showedμe,satvalues as high as1.0 cm2 V-1 s-1,which are 2-fold higher than that of NDI3 HU-DTYM2 with the same device structure and measurement conditions.In addition,the single crystal OFET devices based on Se-containing compound NDI2 BO-DSYM2 showed a highμe,satvalue of 1.30 cm2 V-1 s-1.The molecular packing of NDI2 BO-DSYM2 in single crystals(two-dimensional supramolecular structure formed by intermolecular Se···Se interactions)is quite different from that of a S-containing compound NDI-DTYM2(one dimensional supramolecular structure formed by intermolecularπ-πstacking).Therefore,the Se substitution can cause dramatic change about molecular stacking model,giving rise to high n-type OTFT performance.Our results demonstrated an effective strategy of the heavy atom effect for designing novel organic semiconductors.

Effect of substituents on self-assembling behaviors and charge transport properties of nonplanar heterocycloarenes

(Hetero)cycloarenes possessing rigid molecular skeletons and largeπ-systems are the potential active materials in various electronic devices.However,the development of their organic electronics still lags far behind the synthetic chemistry.Herein,in order to bridge this gap,we reported the study of organic semiconductor materials based on heterocycloarenes in detail about the relationship between structure,properties,and device performance.Three varying straight alkyl chain substituted butterflyshaped heterocycloarenes PTZs were strategically synthesized.Compared with bulky aryl(mesityl)substituted PTZ1,PTZs show additional self-assembly behavior.Concentration-dependent^(1)H NMR spectra indicated that the self-assembly behavior can be modulated by the alkyl chain length.Medium alkyl chain length substituted heterocycloarene PTZ-C6 showed the strongest association constants of 490 M^(–1)in solution,and a similar trend was also observed in solid state by thin film absorption spectra.Remarkably,despite the nonplanar conjugated backbones,solution-processing thin film transistor based on PTZ-C6 exhibits hole mobility up to 0.13 cm^(2)V^(–1)s^(–1)and considerable current on/off ratio of 10^(5).Our study demonstrates that substituent engineering of heterocycloarenes is a powerful strategy for modulating self-assembling structures and promoting transistor device performance.