Progress of Electrocatalytic Technology in Treating Organic Chemical Wastewater

In recent years,extensive research has been conducted on the preparation of high catalytic performance electrodes and the development of electrocatalytic water treatment processes.This article introduces the basic principles of electrochemical water treatment,the preparation of electrode materials,and the research progress of electrocatalytic technology for degrading organic chemical wastewater.It analyzes the problems faced by electrocatalytic degradation of organic chemical wastewater and looks forward to the development trend of electrocatalytic technology in the field of organic chemical wastewater treatment.

Biological Degradation of Some Organic Compounds Enrolled in Paper Industry—A Pollution Prevention Approach

Evaluation of the elimination and the “ultimate” biodegradation by aerobic microorganisms of some organic compounds commonly used in paper manufacturing technology was investigated. Biodegradation lines of nine organic compounds were determined as percentage removal of chemical oxygen demand (COD) over 7 days incubation. The results of the biodegradability test clearly revealed that some of the organic compounds under investigation are highly biodegradable, while others rank from fairly to even non biodegradable. Significant biodegradation results were recorded for anti coating ester (95.0%), basoplast 200D (85.3%) and basoplast PR 8050(87.6%). A bleaching agent (formamidin sulfinic acid), ukanol BSA and solidurit KM demonstrate moderate biodegradation results of 62.1%, 76.2% and 69.8%, respectively. Poor biodegradation results for Hedifix M/35 (12.7%), basazol orange (34.9%) and basazol brown (29.0%) were recorded. Accordingly, appropriate precaution should be taken into consideration when using these compounds for industrial applications.

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.

In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition（MOCVD） system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses（tensile and compressive） during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

Adiabatic Decomposition of Two Kinds of Organic Peroxides by Accelerating Rate Calorimeter

The accelerating rate calorimeter was applied to study the thermal hazard of two kinds of organic peroxides, i.e. methyl ethyl ketone peroxide (MEKPO) and benzoyl peroxide (BPO). And their thermal decomposition characteristics were discussed. Meanwhile, thermal decomposition characteristics of MEKPO and BPO vvere compared. The result indicated that MEKPO is more sensitive to thermal effect than BPO. While once the thermal decomposition takes place. BPO will be more hazardous than MEKPO due to its serious pressure effect. Thermal kinetic analysis of these two kinds of organic peroxides was also taken, and the kinetic parameters for them were calculated. The study of thermal decomposition of MEKPO solution with different initial concentrations indicated that, the lower concentration MEKPO solution is, the higher onset temperature will be. And with the addition of organic solvent, it becomes more difficult for MEKPO to reach a thermal decomposition. Therefore, its thermal hazard is reduced.

GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency

We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.

Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer

The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis （metal organic chemical vapour deposition （MOCVD）） of single solid source precursor, cobalt acetylacetonate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction （XRD）, showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2,15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron microscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than i micron for the deposited thin films of cobalt oxide.

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The sources of trimethylaluminium（TMAl） and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction（HRXRD） measurement showed that the full width at half maximum（FWHM） of the（0002） and（10-12） reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square（RMS） roughness was lower to 0.2 nm as tested by atomic force microscope（AFM）. The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 x 10^13 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cruZ/V-s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition

Orthogonal experiments of Ga Sb films growth on Ga As（001） substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition（LP-MOCVD） system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum（358 arc sec） of the（004） ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

Study on Migration and Transformation Rule of Organic Pollutants (COD) in Aerated Zone

Collecting waste water with a certain c onc entration of organic pollutants COD (chemical oxygen demand), static adsorption, static biodegradation and dynamic soil column experiments were made in laborato ry, we researched migration and transformation of COD in aerated zone, and put f orward a mathematical model showing the process. The results show that adsorptio n of organism in aerated zone is linear, which is represented by Henry's law s =K dc+s d, adsorption coefficient K d=0.069 3; biodegradati on diagram accord basically with first order kinetics equation c=c 0e -K 1t , biodegradation coefficient K 1 = 0.049 9 d -1 ; dispersio n coefficient D= 0.002 42 m 2/d in experiments. The migration and transform ation of organic pollutants (COD) in aerated zone jointly result from many f actors such as dispersion, adsorption and biodegradation etc..

Changes in Chemical Composition of Soluble Organic Chemical Compounds during Litters Decomposition into Tropical Forest of Milletia laurentii De Wild

Recent publication attested that in the urban forest of Brazzaville, litter decomposition is faster with almost 45% of initial weight loss than in the dry season, where an average loss of 26% in initial litter weight is noted (Ifo et al., 2018). This study was carried out in the urban forest of Brazzaville to follow the decomposition of some organic compounds/secondary metabolites (reducing Sugars, total Flavonoid and Polyphenols) of the leaves litters of two tropical species Antiaris toxicaria Lesch and Millettia laurentii De Wild. Thin-layer chromatography and spectrophotometric assay of these metabolites were used on the samples of litters collected in the field on various dates of follow-up of the decomposition (0 d, 14 d, 28 d, 42 d, 56 d, 72 d and 84 d). The chromatographic profile of initial litters shows a series of spots on yellow florescence materializing presence of flavonoids, green fluorescence revealing the presence of the acids phenols derived from the cinnamic acid. But the chromatographic profile of the two litters in decomposition after two weeks remains without structural information, being able to characterize the decomposition of the chemical families highlighted in the initial litters. Also, the analysis of quantitative total reducing sugar in the initial litters, gives average concentrations of 64.4, 58.6, 57.5 g EG/kg Ms respectively for the litters of Millettia laurentii De Wild, Antiaris toxicaria Lesch and the mixed litters (Millettia laurentii and Antiaris toxicaria). Comparatively with the other types of litters, the initial average concentrations in phenolic compounds (polyphenols and flavonoids totals) were the highest for the litters of Antiaris toxicaria Lesch (27.3 g EAG/kg Ms and 13.07 g EC/kg Ms) (P = 0.001). The losses of organic chemical compounds are more significant during the first two weeks of experiment than after this period. Antiaris toxicaria Lesch loses on average 43.8 g EG/kg Ms of reducing Sugars, 12.21 g EC/kg Ms of totals flavonoids and 26.4 g EAG/kg Ms of total polyphenols, equivalent to 30% of loss of the initial weight. Average losses of 45.7 g EG/kg Ms were obtained for reducing sugars, 1.5 g EC/kg Ms for totals flavonoids and 8.72 g EAG/kg Ms for totally phenols in for the litters of Millettia laurentii, comparable to 24% in initial weight loss. This study showed on the one hand, the direct link between rainfall and litters decomposition and the losses in weight of the litters resulted in dissolution in the water of the studied compounds.

Quantum cascade lasers grown by MOCVD

Sharing the advantages of high optical power,high efficiency and design flexibility in a compact size,quantum cascade lasers(QCLs)are excellent mid-to-far infrared laser sources for gas sensing,infrared spectroscopic,medical diagnosis,and defense applications.Metalorganic chemical vapor deposition(MOCVD)is an important technology for growing high quality semiconductor materials,and has achieved great success in the semiconductor industry due to its advantages of high efficiency,short maintenance cycles,and high stability and repeatability.The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices.This review summarizes the recent progress of QCLs grown by MOCVD.Material quality and the structure design together determine the device performance.Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

The high power GaN-based blue light emitting diode （LED） on an 80%tm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition （MOCVD）, hydride vapor-phase epi- taxial （HVPE）, and laser lift-off （LLO）. Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction （XRD）, high resolution transmission electron microscope （HRTEM）, Rutherford back-scattering （RBS）, photoluminescence, current-voltage and light output-current measurements. The width of （0002） reflection in XRD rocking curve, which reaches 173＂ for the thick GaN template LED, is less than that for the conventional one, which reaches 258＂. The HRTEM images show that the multiple quantum wells （MQWs） in 80%tm- thick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-~m-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80%tin-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.

Experimental and modeling study of kinetics for methane hydrate formation in a crude oil-in-water emulsion

A low-viscosity emulsion of crude oil in water can be believed to be the bulk of a flow regime in a pipeline.To differentiate which crude oil would and which would not counter the blockage of flow due to gas hydrate formation in flow channels,varying amount of crude oil in water emulsion without any other extraneous additives has undergone methane gas hydrate formation in an autoclave cell.Crude oil was able to thermodynamically inhibit the gas hydrate formation as observed from its hydrate stability zone.The normalized rate of hydrate formation in the emulsion has been calculated from an illustrative chemical affinity model,which showed a decrease in the methane consumption（decreased normalized rate constant） with an increase in the oil content in the emulsion.Fourier transform infrared spectroscopy（FTIR） of the emulsion and characteristic properties of the crude oil have been used to find the chemical component that could be pivotal in selfinhibitory characteristic of the crude oil collected from Ankleshwar,India,against a situation of clogged flow due to formation of gas hydrate and establish flow assurance.

Interfacial efects of suspended particles on biodegradation of N-(2,4-dimethyl phenyl)-N’-methylformamidine hydrochloride and dibutyl phthalate in waters

The occurrence of suspended particles and the organic chemicals biodegradation are the universal phenomenan in aquatic environment, therefore research of interfacial effects of suspended particles on biodegradation of organic compounds has became very important aspect of organic pollutants fate studies in multimedia environment. The biodegradation of N (2,4 dimethyl phenyl) N' methylformamidine hydrochloride and dibutyl phthalate, and the interfacial effects of suspended particles on biodegradation rate were studied. The interfacial effect factor was introduced to express the effect of suspended solids on biodegradation rate. The results of simulation experiment of two compounds and theoretical analysis of process show that biodegradation rate of pollutants increases linearly with interfacial effect factor.