We investigated the properties of C_（60）-based organic field-enect transistors（OFETs）（？） a pentacene passivation layer inserted between the C_（60） active layer and the gate dielectric.After modification of th...We investigated the properties of C_（60）-based organic field-enect transistors（OFETs）（？） a pentacene passivation layer inserted between the C_（60） active layer and the gate dielectric.After modification of the pentacene passivation layer,the performance of the devices was considerably improved compared to C_（60）-based OFETs with only a PMMA dielectric.The peak field-effect mobility was up to 1.01 cm^2/（V·s） and the on/off ratio shifted to 10~4.This result indicates that using a pentacene passivation layer is an effective way to improve the performance of N-type OFETs.展开更多
基金supported by the National Natural Science Foundation of China(No.61076065)the Natural Science Foundation of Tianjin City,China(No.07JCYBJC12700)
文摘We investigated the properties of C_（60）-based organic field-enect transistors（OFETs）（？） a pentacene passivation layer inserted between the C_（60） active layer and the gate dielectric.After modification of the pentacene passivation layer,the performance of the devices was considerably improved compared to C_（60）-based OFETs with only a PMMA dielectric.The peak field-effect mobility was up to 1.01 cm^2/（V·s） and the on/off ratio shifted to 10~4.This result indicates that using a pentacene passivation layer is an effective way to improve the performance of N-type OFETs.
