Performance improvement in pentacene organic thin film transistors by inserting a C_(60) ultrathin layer

The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/（V.s）. It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor （OTFT） performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/（V-s）. It indicates that further reducing the contact resistance of OTFTs should be carried out.

Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors

The contact-size-dependent characteristic of cutoff frequency fT in bottom-contact organic thin film transistors （OTFTs） is studied. The effects of electrode thickness, field-effect mobility, channel length and gate-source voltage on the contact length （source and drain electrodes＇ length） related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model. It is found that the contact resistance increases dramatically when the contact length is scaled down to 20O nm. With the help of the contact length related contact resistance, contact-size-dependent fT Of bottom-contact OTFTs is studied and it is found that fr increases with the decrease of the contact length in bottom-contact OTFTs.

Temperature Dependence of Electrical Properties of Organic Thin Film Transistors Based on pn Heterojuction and Their Applications in Temperature Sensors

Organic thin film transistors based on an F16CuPc/α6T pn heterojunction have been fabricated and analyzed to investigate the temperature dependence of electrical properties and apply in temperature sensors. The mobility follows a thermally activated hopping process. At temperatures over 200 K, the value of thermal activation energy (EA) is 40. 1 meV, similar to that of the single-layer device. At temperatures ranging from 100 to 200 K, we have a second regime with a much lower EA of 16.3 meV, where the charge transport is dominated by shallow traps. Similarly, at temperatures above 200 K, threshold voltage (VT) increases linearly with decreasing temperature, and the variations of VT of 0.185 V/K is larger than the variation of VT (~0.020 V/K) in the single layer devices. This result is due to the interface dipolar charges. At temperatures ranging from 100 K to 200 K, we have a second regime with much lower variations of 0.090 V/K. By studying gate voltage (VG)-dependence temperature variation factor (k), the maximum value of k (~0.11 dec/K) could be obtained at VG = 5 V. Furthermore, the pn heterojunction device could be characterized as a temperature sensor well working at low operating voltages.

Impact of source and drain contact thickness on the performance of organic thin film transistors

This paper analyzes the impact of source（ts） and drain（td） contact thicknesses on top contact（TC） and bottom contact（BC） organic thin film transistors（OTFTs） with a gate in the bottom, using a benchmarked industry standard Atlas 2-D numerical device simulator. The parameters including drive current（Ids）, mobility（μ）, threshold voltage（Vt）and current on-off ratio（ION/IOFF） are analyzed from the device physics point of view on different electrode thicknesses, ranging from infinitesimal to 50 nm, for both top and bottom contact structures. Observations demonstrate that the performance of the BC structure is more affected by scaling of ts=din comparison to its counterpart. In the linear region, the mobility is almost constant at all the values of ts=dfor both structures. However,an increment of 18% and 83% in saturation region mobility is found for TC andBC structures, respectively with scaling down ts=dfrom 50–0 nm. Besides this, the current on-off ratio increases more sharply in the BC structure.This analysis simplifies a number of issues related to the design and fabrication of organic material based devices and circuits.

Control of polymorphism in solution-processed organic thin film transistors by self-assembled monolayers

Polymorphism of organic semiconductor films is of key importance for the performance of organic thin film transistors(OTFTs).Herein,we demonstrate that the polymorphism of solution-processed organic semiconductors in thin film transistors can be controlled by finely tuning the surface nanostructures of substrates with self-assembled monolayers(SAMs).It is found that the SAMs of 12-cyclohexyldodecylphosphonic acid(CDPA)and 12-phenyldodecylphosphonic acid(Ph DPA)induce different polymorphs in the dip-coated films of 2-dodecyl[1]benzothieno[3,2-b][1]benzothiophene(BTBT-C12).The film of BTBT-C12 on CDPA exhibits field effect mobility as high as 28.1 cm2 V-1 s-1 for holes,which is higher than that of BTBT-C12 on Ph DPA by three times.The high mobility of BTBT-C12 on CDPA is attributable to the highly oriented films of BTBT-C12 with a reduced in-plane lattice and high molecular alignment.

Pendant Group Effect of Polymeric Dielectrics on the Performance of Organic Thin Film Transistors

Polymer dielectric is superior to its inorganic counterparts due to not only the low cost and intrinsic flexibility,but also the readily tunable dielectric constant,surface charge trap density,charge ejection and releasing ability and dipole moment,and all these properties play decisive roles in regulating the characteristic and performances of organic thin film transistors(OTFT).However,systematical studies on the relationship between structure and properties of polymeric dielectrics are rare.To this end,a series of polymeric dielectrics with well-defined linkages(ester or amide bonds)and predesigned pendant groups(alkyl-and aromatic-groups)are synthesized in high yields.Detailed studies show that the polyamide dielectrics exhibit higher dielectric constant,surface charge trapping density,and better charge storage capability than corresponding polyester dielectrics.Further,increasing theπelectron delocalization of the pendant groups generally benefits the charge storage property and transistor memory behavior.Theoretical calculation reveals that the hydrogen bonding between the linkage groups and the energy alignment between polymeric dielectric and semiconductor are responsible for the observed performance differences of OTFT with different polymeric dielectrics.These results may shine light on the design of polymeric dielectrics for OTFTs with different applications.

Organic thin film transistors with a SiO_2/SiN_x/SiO_2 composite insulator layer

We have investigated a SiO2/SiNx/SiO2composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO2gate insulator. The SiO2/SiNx/SiO2composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2insulation layer device,the SiO2/SiNx/SiO2composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.

Properties of C_(60) thin film transistor based on polystyrene

This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.

n-Channel Organic Transistors Processed from Halogen-Free Solvents： Solvent Effect on Thin-Film Morphology and Charge Transport

Non-chlorinated solvents are highly preferable for organic electronic processing due to their environmentally friendly characteristics. Four different halogen-free solvents, tetrafuran, toluene, meta-xylene and 1,2,4-trimethyl- benzene, were selected to fabricate n-channel organic thin film transistors （OTFTs） based on 3-hexylundecyl sub- stituted naphthalene diimides fused with （1,3-dithiol-2-ylidene）malononitrile groups （NDI3HU-DTYM2）. The OTFTs based on NDI3HU-DTYM2 showed electron mobility of up to 1.37 cm2-V-1·s -1 under ambient condition. This is among the highest device performance for n-channel OTFTs processed from halogen-free solvents. The dif- ferent thin-film morphologies, from featureless low crystalline morphology to well-aligned nanofibres, have a great effect on the device performance. These results might shed some light on solvent selection and the resulting solution process for organic electronic devices.

Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer

We herein report the effective performance enhancement of the pentacene-based organic thin film transistors with silicon di- oxide dielectric by inserting a thin metal phthalocyanines interlayer between Au source/drain electrodes and the pentacene active layer. The threshold voltage decreased remarkably from ca. -20 V to a few volts （below -7.6 V） while the mobility in- creased 1.5-3 times after the insertion of the interlayer of only ca. 2 nm, which could be attributed to the reduction of the car- tier injection barrier. The results suggest a simple and effective way to achieve low-threshold-voltage pentacene-based organic thin film transistors with high mobility on silicon dioxide dielectric.

Improving the Performance of TIPS-pentacene Thin Film Transistors via Interface Modification

Understanding the structure-performance relationship is crucial for optimizing the performance of organic thin film transistors. Here, two interface modification methods wereapplied to modulate the thin film morphology of the organic semiconductor, 6,13-bis（triisopropylsilylethynyl）pentacene（TIPS-pentacene）. The resulting different film morphologies and packing structures led to distinct charge transport abilities. A substantial 40-fold increase in charge carrier mobility was observed on the octadecyltrichlorosilane（OTS）-modified sample compared to that of the transistor on the bare substrate. A better charge mobility greater than 1 cm^2· V^-1· s^-1 is realized on the p-sexiphenyl（p-6P）- modified transistors due to the large grain size, good continuity and, importantly, the intimate π-π packing in each domain.

Asymmetric side-chain engineering of organic semiconductor for ultrasensitive gas sensing

Molecular structure of organic semiconductor plays a critical role in determining the performance and functionality of organic electronic devices,by optimizing the electrical,optical and physicochemical properties.Substituted alkyl chains are fundamental units in tailering the solubility and assemblability,among which the asymmetric properties have been reported as key element for controlling the packing motifs and intrinsic charge transport.Here,we expanded the scope of molecular asymmetry dependent sensing features based on a new series of naphthalene diimides(NDI)-based derivatives substituted with a same branching alkyl chain but various linear-shaped alkyl chains(Cn-).A clear molecular stacking change,from head-to-head bilayer to head-to-tail monolayer packing model,is observed based on the features of anisotropic molecular interactions with the change in the chain length.Most importantly,a unique LUMO level shift of 0.17 eV is validated for NDI-PhC4,providing a record sensitivity up to 150%to 0.01 ppb ammonia,due to the desired molecular reactivity and device amplification properties.These results indicate that asymmetric side-chain engineering opens a route for breath healthcare.

A low voltage and small hysteresis C_(60) thin film transistor

Organic thin film transistors with C6O as an n-type semiconductor have been fabricated. A tantalum pentoxide （Ta2O5）/poly-methylmethacrylate （PMMA） double-layer structured gate dielectric was used. The Ta2O5 layer was prepared by using a simple solution-based and economical anodization technique. Our results demonstrate that double gate insulators can combine the advantage of Ta2O5 with high dielectric constant and polymer insulator for a better interface with the organic semiconductor. The performance of the device can be improved obviously with double gate insulators, compared to that obtained by using a single Ta205 or PMMA insulator. Then, a good performance n-type OTFT, which can work at 10 V with mobility, threshold voltage and on/off current ratio of, respectively, 0.26 cm2/（V.S）, 3.2 V and 8.31 × 10^4, was obtained. Moreover, such an OTFT shows a negligible ＂hysteresis effect＂ contributing to the hydroxyl-free insulator surface.

Fabrication of flexible thin organic transistors by trace water assisted transfer method

The development of fabrication method for flexible thin organic electronic device is highly important for the flexible and wearable products. Herein, we develop a facile peel-off method to transfer organic thin film to various substrates. In this strategy, polyacrylonitrile （PAN） film can be easily peeled offwith trace water and further transferred to various substrates. Using PAN as supporting and dielectric layers, high performance flexible organic transistors are fabricated. Remarkably, the method uses only micro volume water as an assist to peel off PAN film, which reduces the risk of contamination by solvent and greatly contributes to the performance maintenance.

OTFT with Bilayer Gate Insulator and Modificative Electrode

An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.

Printed unmanned aerial vehicles using paper-based electroactive polymer actuators and organic ion gel transistors

We combined lightweight and mechanically flexible printed transistors and actuators with a paper unmanned aerial vehicle(UAV)glider prototype to demonstrate electrically controlled glide path modification in a lightweight,disposable UAV system.The integration of lightweight and mechanically flexible electronics that is offered by printed electronics is uniquely attractive in this regard because it enables flight control in an inexpensive,disposable,and easily integrated system.Here,we demonstrate electroactive polymer(EAP)actuators that are directly printed into paper that act as steering elements for low cost,lightweight paper UAVs.We drive these actuators by using ion gel-gated organic thin film transistors(OTFTs)that are ideally suited as drive transistors for these actuators in terms of drive current and frequency requirements.By using a printing-based fabrication process on a paper glider,we are able to deliver an attractive path to the realization of inexpensive UAVs for ubiquitous sensing and monitoring flight applications.

Growth Behavior of Rubrene Thin Films on Hexagonal Boron Nitride in the Early Stage

Two-dimensional materials,with an in-plane ordered and dangling-bonding-free surface,are ideal substrates for fabricating high-quality crystalline thin films.Here,we show a systematic study on the growth of a benchmark organic semiconductor,rubrene,on hexagonal boron nitride(h-BN)substrate via physical vapor deposition from the initial amorphous phase to the final crystalline phase;the role of temperature in such transition and the epitaxy relationship between rubrene and h-BN are revealed.With the increase of substrate temperature,the critical thickness of amorphous-crystalline-transition decreases and the morphology of crystalline phase also evolves from porous to terrace-like.When substrate temperature reaches>100℃,the critical thickness reduces to only 0.5 nm and a precise layer-by-layer growth from the very first layer is achieved,which is quite rare for rubrene growing on other substrates.The high ordering can be attributed to the fine epitaxy relationship between rubrene films and the h-BN surface lattice,and this film demonstrates good charge transport ability with a p-type field-effect mobility of>1 cm^(2)·V^(-1)·s^(-1).

The fabrication and optimization of OTFT formaldehyde sensors based on Poly(3-hexythiophene)/ZnO composite films

Formaldehyde(HCHO),a colorless and pungent-smelling gas,is confirmed be a huge threat to human health.The detection of formaldehyde is necessary and important.The Poly(3-hexythiophene)(P3HT)/ZnO organic-inorganic composite thin film was fabricated and used as the sensitive layer of organic thin film transistors(OTFT) by spray-deposited method to detect HCHO at room temperature.The process parameters such as P3HT/ZnO weight ratios and airbrushed masses were optimized.The results showed that P3HT/ZnO OTFT exhibited good sensing response to HCHO.Airbrushed mass of 1ml was the optimal mass,and the 1:1 and 1:5 weight ratios of P3HT/ZnO exhibited better sensing properties compared with others.OTFT gas sensors based on P3HT/ZnO composite film provides a novel promising approach to the detection of HCHO.

Selenium-containing core-expanded naphthalene diimides for high performance n-type organic semiconductors

The incorporation of heavy atoms into molecular backbone is an extremely straightforward strategy for fine-tuning the optoelectronic properties of organic semiconductors.However,it is rarely studied in n-type small molecules.Herein,by selenium substitution of NDI3 HU-DTYM2,two Se-decorated core-expanded naphthalene diimides(NDI)derivatives DTYM-NDI3 HUDSYM(1)and NDI3 HU-DSYM2(2)were synthesized.In comparison with the reference S-containing compound NDI3 HUDTYM2,the highest occupied molecular orbital(HOMO)and lowest unoccupied molecular orbital(LUMO)energy levels of 1 and 2 were fine-tuned with?HOMO of about 0.2 e V,?LUMO of 0.1 e V and the narrowed HOMO-LUMO gaps.More surprisingly,the as-spun organic thin film transistors(OTFTs)based on 1 and 2 both showedμe,satvalues as high as1.0 cm2 V-1 s-1,which are 2-fold higher than that of NDI3 HU-DTYM2 with the same device structure and measurement conditions.In addition,the single crystal OFET devices based on Se-containing compound NDI2 BO-DSYM2 showed a highμe,satvalue of 1.30 cm2 V-1 s-1.The molecular packing of NDI2 BO-DSYM2 in single crystals(two-dimensional supramolecular structure formed by intermolecular Se···Se interactions)is quite different from that of a S-containing compound NDI-DTYM2(one dimensional supramolecular structure formed by intermolecularπ-πstacking).Therefore,the Se substitution can cause dramatic change about molecular stacking model,giving rise to high n-type OTFT performance.Our results demonstrated an effective strategy of the heavy atom effect for designing novel organic semiconductors.

Effect of substituents on self-assembling behaviors and charge transport properties of nonplanar heterocycloarenes

(Hetero)cycloarenes possessing rigid molecular skeletons and largeπ-systems are the potential active materials in various electronic devices.However,the development of their organic electronics still lags far behind the synthetic chemistry.Herein,in order to bridge this gap,we reported the study of organic semiconductor materials based on heterocycloarenes in detail about the relationship between structure,properties,and device performance.Three varying straight alkyl chain substituted butterflyshaped heterocycloarenes PTZs were strategically synthesized.Compared with bulky aryl(mesityl)substituted PTZ1,PTZs show additional self-assembly behavior.Concentration-dependent^(1)H NMR spectra indicated that the self-assembly behavior can be modulated by the alkyl chain length.Medium alkyl chain length substituted heterocycloarene PTZ-C6 showed the strongest association constants of 490 M^(–1)in solution,and a similar trend was also observed in solid state by thin film absorption spectra.Remarkably,despite the nonplanar conjugated backbones,solution-processing thin film transistor based on PTZ-C6 exhibits hole mobility up to 0.13 cm^(2)V^(–1)s^(–1)and considerable current on/off ratio of 10^(5).Our study demonstrates that substituent engineering of heterocycloarenes is a powerful strategy for modulating self-assembling structures and promoting transistor device performance.