A 680 V LDMOS on a thin SOI with an improved field oxide（FOX） and dual field plate was studied experimentally.The FOX structure was formed by an ＂oxidation-etch-oxidation＂ process,which took much less time to form...A 680 V LDMOS on a thin SOI with an improved field oxide（FOX） and dual field plate was studied experimentally.The FOX structure was formed by an ＂oxidation-etch-oxidation＂ process,which took much less time to form,and had a low protrusion profile.A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance.An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field.Using a SimBond SOI wafer with a 1.5μm top silicon and a 3μm buried oxide layer,CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V,and the specific on-resistance was 8.2Ω·mm^2.展开更多
We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10^（17） A/mm at V_（GS）= 0 V and...We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10^（17） A/mm at V_（GS）= 0 V and V_（DS） = 5 V.The threshold voltage is measured to be ＋0.8 V by linear extrapolation from the transfer characteristics.The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V.A low reverse gate leakage current density of 4.9×10^（17） A/mm is measured at V_（GS） =-15 V.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.11175229,61006088)
文摘A 680 V LDMOS on a thin SOI with an improved field oxide（FOX） and dual field plate was studied experimentally.The FOX structure was formed by an ＂oxidation-etch-oxidation＂ process,which took much less time to form,and had a low protrusion profile.A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance.An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field.Using a SimBond SOI wafer with a 1.5μm top silicon and a 3μm buried oxide layer,CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V,and the specific on-resistance was 8.2Ω·mm^2.
基金supported by the National Natural Science Foundation of China(Nos.10990102,60890192,60876009)
文摘We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10^（17） A/mm at V_（GS）= 0 V and V_（DS） = 5 V.The threshold voltage is measured to be ＋0.8 V by linear extrapolation from the transfer characteristics.The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V.A low reverse gate leakage current density of 4.9×10^（17） A/mm is measured at V_（GS） =-15 V.
