We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
The corrosion behaviour and mechanism of superpure austenitic stainless steel 00Cr25Ni22Mo2N in urea processing environment was studied using metallography,SEM, TEM,SIMS and AES techniques.The results show that the ga...The corrosion behaviour and mechanism of superpure austenitic stainless steel 00Cr25Ni22Mo2N in urea processing environment was studied using metallography,SEM, TEM,SIMS and AES techniques.The results show that the gas extraction tube made of non-sensitized 00Cr25Ni22Mo2N steel suffered intergranular corrosion.Corrosive media penetrated not only into the tube wall through grain boundaries but also expanded from the boundary towards the interior of the grain.Neither depletion of Cr nor precipitates were found at the grain boundaries.However,P(and Si)was segregated at the grain boundaries to a great extent.Semiquantitative calculation indicates that the P content at the grain boundaries is about 25 wt-%,three orders of magnitude higher than the content within the grain.Sugges- tion is made that the potential difference between the grain and its boundary due to the segre- gation results in the observed intergranular corrosion.展开更多
Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolu...Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature （Ta） is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals （NCs） with the core-shell structure form in the films. After being annealed at 1000℃ （above the melting point of bulk Ge）, Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.展开更多
1.IntroductionPhosphorus causes remarkable decreaseof impact toughness due to its segregationon grain boundary[1,2].In this paper,theinfluence of P content on the reverse changeof P segregation and impact toughness of...1.IntroductionPhosphorus causes remarkable decreaseof impact toughness due to its segregationon grain boundary[1,2].In this paper,theinfluence of P content on the reverse changeof P segregation and impact toughness ofmedium carbon Cr-Mn-Si steel at the samestrength level is reported.展开更多
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
文摘The corrosion behaviour and mechanism of superpure austenitic stainless steel 00Cr25Ni22Mo2N in urea processing environment was studied using metallography,SEM, TEM,SIMS and AES techniques.The results show that the gas extraction tube made of non-sensitized 00Cr25Ni22Mo2N steel suffered intergranular corrosion.Corrosive media penetrated not only into the tube wall through grain boundaries but also expanded from the boundary towards the interior of the grain.Neither depletion of Cr nor precipitates were found at the grain boundaries.However,P(and Si)was segregated at the grain boundaries to a great extent.Semiquantitative calculation indicates that the P content at the grain boundaries is about 25 wt-%,three orders of magnitude higher than the content within the grain.Sugges- tion is made that the potential difference between the grain and its boundary due to the segre- gation results in the observed intergranular corrosion.
文摘Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature （Ta） is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals （NCs） with the core-shell structure form in the films. After being annealed at 1000℃ （above the melting point of bulk Ge）, Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.
文摘1.IntroductionPhosphorus causes remarkable decreaseof impact toughness due to its segregationon grain boundary[1,2].In this paper,theinfluence of P content on the reverse changeof P segregation and impact toughness ofmedium carbon Cr-Mn-Si steel at the samestrength level is reported.
