用等离子体浸没离子注入制作亚100nmP^+/N结

采用等离子体浸没离子注入(PⅢ)技术,通过SiF_4预非晶化后进行BF_3掺杂制作了亚100nmP^+/n结。这种方法的掺杂率可高达10^(16)/cm^2·s。硅片浸没在SiF_4或BF_3等离子体中并加负偏压。带正电的离子由等离子体层内的电场加速后注入到硅片中。改变加在硅片支座上的负压及热退火的条件就可控制结深。

Ag_3PO_4/Ag_2CO_3 p–n heterojunction composites with enhanced photocatalytic activity under visible light

Formation of a p–n heterojunction rather than p-type or n-type semiconductors can enhance the separation of photogenerated electrons and holes and increase the quantum efficiency of photocatalytic reactions owing to the difference of the electric potential in the inner electric field near the junction,pointing from n toward p. n-Ag3PO4/p-Ag2CO3 p–n heterojunction composites are prepared through a facile coprecipitation process. The obtained Ag3PO4/Ag2CO3 p–n heterojunctions exhibit excellent photocatalytic performance in the removal of rhodamine B（RhB） compared with Ag3PO4 and Ag2CO3. The 40%-Ag3PO4/Ag2CO3 composite photocatalyst（40 mol% Ag3PO4 and 60 mol% Ag2CO3） exhibits the best photocatalytic activity under visible light,demonstrating the ability to completely degrade RhB within 15 min. Transient photovoltage characterization and an active species trapping experiment further indicate that the formation of a p–n heterojunction structure can greatly enhance the separation efficiency of photogenerated carriers and produce more free h＋active species,which is the predominant contributor for RhB removal.

Photochemical oxidation mechanism of microcystin-RR by p-n heterojunction Ag/Ag_2O-BiVO_4

Microcystin-RR（MC-RR）,a form of microcystin with two arginine moieties,is a cyanobacterial toxin that has been detected across a wide geographic range.It is a great concern globally because of its potential liver toxicity.Herein,the abilities of BiVO4,Ag-BiVO4,Ag2O-BiVO4 and Ag/Ag2O-BiVO4 to photocatalytically degrade MC-RR under visible-light irradiation（λ≥420 nm） were investigated and compared.The possible degradation pathways were explored through analysis of the reaction intermediates by high-performance liquid chromatography-mass spectrometry.The results showed that the presence of Ag^0 enhanced the photocatalytic efficiency of Ag/Ag2O-BiVO4 via a synergetic effect between Ag2O and Ag^0 at the p-n heterojunction.Moreover,the presence of Ag^0 also greatly promoted the adsorption of MC-RR on the photocatalyst surface.Toxicological experiments on mice showed that the toxicity of MC-RR was significantly reduced after photocatalytic degradation.

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown onφ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD).The initial stage of carbonization and the surface morphology of carbonization layers of Si (100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM).It is shown that the optimized carbonization temperature for the growth of voids-free 3C-SiC on Si (100) substrates is 1100℃.The electrical properties of SiC layers are characterized using Van der Pauw method.The I-V,C-V,and the temperature dependence of I-V characteristics in n-3C-SiC/p-Si heterojunctions with AuGeNi and Al electrical pads are investigated.It is shown that the maximum reverse breakdown voltage of the n-3C-SiC/p-Si heterojunction diodes reaches to 220V at room temperature.These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process

Single event transient of a real p-n junction in a 0.18μm bulk process is studied by 3D TCAD simulation. The impact of voltage, temperature, substrate concentration, and LET on SET is studied. Our simulation results demonstrate that biases in the range 1.62 to 1.98V influence DSET current shape greatly and total collected charge weakly. Peak current and charge collection within 2ns decreases as temperature increases,and temperature has a stronger influence on SET currents than on total charge. Typical variation of substrate concentration in modern VDSM processes has a negligible effect on SEEs. Both peak current and total collection charge increases as LET increases.

Equivalent Doping Transformation Method for Predicting Breakdown Voltage and Peak Field at Breakdown of Epitaxial-Diffused Punch-Through Junction

Based on a new semi empirical analytical method, namely equivalent doping transformation, the breakdown voltage and the peak field of the epitaxial diffused punch through junction have been obtained. The basic principle of this method is introduced and a set of breakdown voltage and peak field plots are provided for the optimum design of the low voltage power devices. It shows that the analytical results coincide with the previous numerical simulation well.

Prediction of Breakdown Voltage of Asymmetric Linearly-Graded Junction by Equivalent Doping Profile Transformation Method

This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.The maximum breakdown voltage and the different depletion layer extension on the diffused side and substrate side are demonstrated in the report.The report shows the equivalent doping profile method is valid to predict the breakdown voltage of the complex P N junction.The analytical results agree with the experimental breakdown voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations.

Amorphous TiO_2-modified CuBi_2O_4 Photocathode with enhanced photoelectrochemical hydrogen production activity

In this study,CuBi2O4 photocathodes were prepared using a simple electrodeposition method for photoelectrochemical(PEC)hydrogen production.The prepared photocathodes were modified with amorphous TiO2 and a Pt co‐catalyst,which resulted in the formation of CuBi2O4/TiO2 p‐n heterojunctions,and enhanced the activities of the as‐prepared photocathodes.The novel Pt/TiO2/CuBi2O4 photocathode exhibited a photocurrent of 0.35 mA/cm2 at 0.60 V vs.Reversible Hydrogen Electrode(RHE),which was nearly twice that of the Pt/CuBi2O4 photocathode.The present study provides a facile method for increasing the efficiency of photocathodes and provides meaningful guidance for the preparation of high‐performance CuBi2O4 photocathodes.

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor （MS） to nonmagnetic semiconductor （NMS） has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization （NESP） in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.

Simulation of a Silicon LED in Standard CMOS Technology

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.

Novel Cu_3P/g-C_3N_4 p-n heterojunction photocatalysts for solar hydrogen generation

Developing efficient heterostructured photocatalysts to accelerate charge separation and transfer is crucial to improving photocatalytic hydrogen generation using solar energy. Herein, we report for the first time that p-type copper phosphide（Cu3P） coupled with n-type graphitic carbon nitride（g-C3N4） forms a p-n junction to accelerate charge separation and transfer for enhanced photocatalytic activity.The optimized Cu3P/g-C3N4 p-n heterojunction photocatalyst exhibits 95 times higher activity than bare g-C3N4, with an apparent quantum efficiency of 2.6% at 420 nm. A detail analysis of the reaction mechanism by photoluminescence,surface photovoltaics and electrochemical measurements revealed that the improved photocatalytic activity can be ascribed to efficient separation of photo-induced charge carriers. This work demonstrates that p-n junction structure is a useful strategy for developing efficient heterostructured photocatalysts.

A fast SOI-based variable optical attenuator with a p-i-n structure with low polarization dependent loss

According to the plasma dispersion effect of silicon(Si),a silicon-on-insulator(SOI) based variable optical attenuator(VOA) with p-i-n lateral diode structure is demonstrated in this paper.A wire rib waveguide with sub-micrometer cross section is adopted.The device is only about 2 mm long.The power consumption of the VOA is 76.3 mW(0.67 V,113.9 mA),and due to the carrier absorption,the polarization dependent loss(PDL) is 0.1dB at 20dB attenuation.The raise time of the VOA is 34.5 ns,the fall time is 37 ns,and the response time is 71.5 ns.

Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1-xGex alloy heterojunction

A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.