The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First...The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.展开更多
以2011~2021年Web of Science核心数据库和中国知网数据库中的584篇零工经济文献为样本进行计量分析,系统梳理该研究领域的发文情况、期刊分布、核心作者、发展脉络和研究热点;从搜集的相关文献中选取117篇高质量文献,运用内容分析法,...以2011~2021年Web of Science核心数据库和中国知网数据库中的584篇零工经济文献为样本进行计量分析,系统梳理该研究领域的发文情况、期刊分布、核心作者、发展脉络和研究热点;从搜集的相关文献中选取117篇高质量文献,运用内容分析法,整理剖析零工经济的主要研究内容,基于“输入—过程—输出”的逻辑主线,从宏观、平台和个体层面梳理零工经济的动因与效用,从平台企业、零工从业者和消费者三方剖析其动态交互过程;从算法管理、自我管理、组织管理和中国情境视角提出可供参考的研究方向。展开更多
用自洽法计算了p i n型a-Si:H薄膜太阳电池中p i和i n两个分立势垒区中的电荷密度分布ρ(x)、电场分布ε(x)和耗尽层厚度XD.减少i层厚度使两个分立势垒区部分重叠,用电场叠加原理计算耗尽层中的电场分布,在此基础上,根据光生载流子的全...用自洽法计算了p i n型a-Si:H薄膜太阳电池中p i和i n两个分立势垒区中的电荷密度分布ρ(x)、电场分布ε(x)和耗尽层厚度XD.减少i层厚度使两个分立势垒区部分重叠,用电场叠加原理计算耗尽层中的电场分布,在此基础上,根据光生载流子的全收集条件Lpmin=μpτpεmin,计算出a-Si:H薄膜太阳电池的最佳i层厚度Xb.展开更多
基金Project(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProject(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China+1 种基金Projects(K5051225014,K5051225004)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
文摘以2011~2021年Web of Science核心数据库和中国知网数据库中的584篇零工经济文献为样本进行计量分析,系统梳理该研究领域的发文情况、期刊分布、核心作者、发展脉络和研究热点;从搜集的相关文献中选取117篇高质量文献,运用内容分析法,整理剖析零工经济的主要研究内容,基于“输入—过程—输出”的逻辑主线,从宏观、平台和个体层面梳理零工经济的动因与效用,从平台企业、零工从业者和消费者三方剖析其动态交互过程;从算法管理、自我管理、组织管理和中国情境视角提出可供参考的研究方向。
文摘用自洽法计算了p i n型a-Si:H薄膜太阳电池中p i和i n两个分立势垒区中的电荷密度分布ρ(x)、电场分布ε(x)和耗尽层厚度XD.减少i层厚度使两个分立势垒区部分重叠,用电场叠加原理计算耗尽层中的电场分布,在此基础上,根据光生载流子的全收集条件Lpmin=μpτpεmin,计算出a-Si:H薄膜太阳电池的最佳i层厚度Xb.
